10BQ100--Datasheet/数据表在线中文翻译

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PD - 2.437A

10BQ100

SCHOTTKY RECTIFIER

1 Amp

Major Ratings and Characteristics

Description / Features

The 10BQ100 surface-mount Schottky rectifier has been de-

signed for applications requiring very low forward drop and

small foot prints on PC boards. Typical applications are in disk

drives, switching power supplies, converters, free-wheeling

diodes, battery charging and reverse battery protection.

• Small footprint, surface mountable

• Very low forward voltage drop

• High frequency operation

• Guard ring for enhanced ruggedness and long-term

reliability

Characteristics

10BQ100

Units

I_F(AV)Rectangular

waveform

1.0

A

V_RRM

100

780

0.62

V

A

V

I_FSM@ tp = 5µs sine

V

F

@ 1.0Apk, T_J= 125°C

T_J

-55 to 175

°C

SMB

CASE STYLE

CASE OUTLINE

275

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10BQ100

Voltage Ratings

Part number

10BQ100

V_R

Max. DC Reverse Voltage (V)

100

V_RWMMax. Working Peak Reverse Voltage (V)

Absolute Maximum Ratings

Parameters

10BQ Units Conditions

I_F(AV)

I_FSM

E_AS

I_AR

Max. Average Forward Current

1.0

50% duty cycle @ T_C= 152°C, rectangular waveform

A

See Fig. 5

Max. Peak One Cycle Non - Repetitive

Surge Current — see Fig. 7

Non - Repetitive Avalanche Energy

780

38

5µs Sine or 3µs Rect. pulse

10ms Sine 0r 6ms Rect. pulse

T_J= 25°C, I_AS= 1.0A, L = 11mH

Following any rated load condition

A

and with rated V_RRMapplied.

9.7

mJ

Repetitive Avalanche Current

1.0

A

Current decaying linearly to zero in 1µsec

Frequency limited by T_Jmax. V_A= 1.5 X V_Rtypical

Electrical Specifications

Parameters

10BQ Units

Conditions

V_FMMax. Forward Voltage Drop

0.78

0.87

0.62

0.70

0.5

V

@ 1.0A

T_J= 25°C

See Fig. 1

V

@ 2.0A

@ 1.0A

V

T_J= 125°C

V

@ 2.0A

I_RM

Max. Reverse Leakage Current

See Fig. 2

mA

pF

nH

V/µs

T_J= 25°C

V_R= rated V_R

1.0

T_J= 125°C

C_T

L _S

Max. Junction Capacitance

Typical Series Inductance

42

V_R= 5V_DC, (test signal range 100KHz to 1MHz) 25°C

Measured lead to lead 5mm from package body

2.0

dv/dt Max. Voltage Rate of Change

(Rated V_R)

10,000

Thermal-MechanicalSpecifications

Parameters

Max.Junction Temperature Range

10BQ

Units

°C

Conditions

T_J

-55 to 175

140

T_STGMax. Storage Temperature Range

R_thJAMax. Thermal Resistance, Junction

to Ambient

°C

°C/W

DC operation — See Fig. 4

DC operation

R_thJLMax. Thermal Resistance, Junction

to Lead ➁

36

°C/W

g

wt

Approximate Weight

Case Style

0.10

SMB

Similar to DO-214AA

Pulse Width < 300µs, Duty Cycle < 2%

➁ Mounted 1 inch square PCB, thermal probe connected to lead 2mm from package

276

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10BQ100

10

1

10

T

=

17 5 °C

1 5 0°C

J

1 2 5°C

1 0 0°C

0.1

7 5°C

5 0°C

0 .01

0.0 0 1

0 .0 00 1

0 .0 0 00 1

2 5°C

T

= 175°C

= 125°C

J

0

20

4 0

6 0

80

1 0 0

=

25°C

1

Reverse Voltage - V

(V)

R

Fig. 2 Typical Values of Reverse Current Vs. Reverse

Voltage

1 0 0

T

= 25°C

J

0.1

0.2

0.4

0.6

0.8

1.0

Forward Voltage D rop - V

(V)

FM

1 0

0

2 0

4 0

6 0

8 0

1 0 0

Fig. 1 Max. Forward Voltage Drop

Reverse Voltage - V (V)

Characteristics

R

Fig. 3 Typical Junction CapacitanceVs. Reverse Voltage

1 00

D

= 0.50

D

= 0 .33

= 0.25

10

P

DM

D

= 0.17

= 0.08

t

1

t

2

1

Notes:

1. Duty factor D =

t

/ t

Single Pulse

(Thermal Resistance)

1

2

2. Peak T = P

x Z

+ T

C

J

DM

thJC

10

0.1

0 .0000 1

0.0 001

0 .0 01

0.01

0.1

1

10 0

t

, Rectangular Pulse Duration (Seconds)

1

Fig. 4 Max. Thermal Impedance Z_thJLCharacteristics

277

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10BQ100

180

1.0 0

0.8 0

0.6 0

0.4 0

0.2 0

0.0 0

D = 0.08

D = 0.17

D = 0.25

D = 0.33

D = 0.50

10B Q 100

R

(D C ) = 36°C /W

thJC

170

160

150

140

130

D C

DC

RM S Lim it

0

0.4

0.8

1.2

F(AV )

1.6

0

0.4

0.8

1.2

1.6

A verage Forw ard C urrent - I

(A)

Average Forward Current - I

(A)

F(AV)

Fig. 5 Max. Allowable Case Temperature Vs.

Fig. 6 Forward Power Loss Characteristics

Average Forward Current

1000

At Any R ated Load C ondition

And W ith R ated V

Following Surge

A pplied

RR M

L

H IG H -S PEE D

SW IT C H

D UT

B R D

100

R g

= 2 5 oh m

F RE E-W HE EL

D IO D E

4 0H FL 40 S0 2

V d

=

25 V o lt

+

C U RR E NT

M ON IT OR

10

100

1000

10000

Square W ave P ulse D uration - t (m icrosec)

p

Fig.7 Max. Non-Repetitive Surge Current

Fig. 8 Unclamped Inductive Test Circuit

Refer to the Appendix Section for the following:

Appendix D: Tape and Reel Information — See page 338.

278

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