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SMD Type  
Diodes  
Rectifier Diodes  
1N4001F ~ 1N4007F  
SMAF  
1
Features  
Low forward voltage drop  
2
High current capability  
Easy pick and place  
Top View  
High surge current capability  
Simplified outline SMAF and symbol  
Plastic material used carries Underwriters  
Laboratory Classification 94V-0  
PIN DESCRIPTION  
PIN  
1
DESCRIPTION  
Cathode  
Anode  
2
Absolute Maximum Ratings Ta = 25  
1N  
1N  
1N  
1N  
1N  
1N  
1N  
Parameter  
Symbol  
Unit  
V
4001F 4002F 4003F 4004F 4005F 4006F 4007F  
Repetitive Peak Reverse Voltage  
RMS Voltage  
V
RRM  
RMS  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
1.1  
1
600  
420  
600  
800  
560  
800  
1000  
700  
V
Maximum DC Blocking Voltage  
Forward Voltage @ 1A  
V
DC  
100  
1000  
V
F
I
FAV  
Averaged Forward Current.TT=100  
A
A
40  
Peak Forward Surge Current @ 8.3ms  
Maximum DC Reverse Current Ta=25  
Ta=125  
I
FSM  
30  
5
I
R
50  
1.5  
12  
Maximum Reverse Current  
*1  
us  
trr  
Cj  
Typical Junction Capacitance *2  
Thermal Resistance Junction to Ambient  
Thermal Resistance Junction to Lead *3  
Junction Temperature  
pF  
75  
27  
85  
30  
R
R
JA  
JL  
/W  
150  
Tj  
Tstg  
-55 to 150  
Storage Temperature  
* 1 Reverse Recovery Test Conditions: I  
F
=0.5A, I  
R=1.0A, IRR=0.25A  
* 2 Measured at 1 MHz and Applied V  
R=4.0 V  
Marking  
NO.  
1N4001F 1N4002F 1N4003F 1N4004F 1N4005F 1N4006F 1N4007F  
M1 M2 M3 M4 M5 M6 M7  
Marking  
1
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SMD Type  
Diodes  
Rectifier Diodes  
1N4001F ~ 1N4007F  
Ƶ Typical Characterisitics  
FIG.1- MAXIMUM FORWARD CURRENT DERATING  
CURVE  
FIG.2- TYPICAL REVERSE CHARACTERISTICS  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
100  
10  
Tj=1250C  
Tj=250C  
1
Tj=750C  
0
20  
40  
60  
80  
100  
120  
140  
160  
0.1  
LEAD TEMPERATURE. (oC)  
FIG.3- MAXIMUM NON-REPETITIVE FORWARD  
SURGE CURRENT  
0.01  
100  
50  
0.001  
0
20  
40  
60  
80  
100  
120  
140  
20  
10  
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)  
1N4007F  
5
FIG.5- TYPICAL FORWARD CHARACTERISTICS  
8.3ms Single  
Half Sine Wave  
Tj=Tj max  
2
1
100  
50  
1
2
5
10  
20  
50  
100  
NUMBER OF CYCLES AT 60Hz  
20  
10  
FIG.4- TYPICAL JUNCTION CAPACITANCE  
5
100  
50  
2
1
Tj=250C  
f=1.0MHz  
Vsig=50mVp-p  
20  
10  
0.5  
0.2  
0.1  
5
0.05  
2
1
0.02  
0.01  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
2.0  
1
10  
100  
0.01  
0.1  
FORWARD VOLTAGE. (V)  
REVERSE VOLTAGE. (V)  
FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM  
50  
10  
trr  
NONINDUCTIVE  
NONINDUCTIVE  
+0.5A  
(-)  
DUT  
(+)  
PULSE  
0
50Vdc  
(approx)  
(-)  
GENERATOR  
(NOTE 2)  
-0.25A  
OSCILLOSCOPE  
(NOTE 1)  
(+)  
NON  
INDUCTIVE  
-1.0A  
NOTES: 1. Rise Time=7ns max. Input Impedance=  
1 megohm 22pf  
1cm  
SET TIME BASE FOR  
5/ 10ns/ cm  
2. Rise Time=10ns max. Sourse Impedance=  
50 ohms  
2
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SMD Type  
Diodes  
Rectifier Diodes  
1N4001F ~ 1N4007F  
Ƶ
Package Outline Dimensions  
Plastic surface mounted package; 2 leads  
SMAF  
ğA LL R O U N D  
ğA LL R O U N D  
M
A
V
HE  
D
E
g
g
A
Top View  
Bottom View  
HE  
ğ
g
UNIT  
mm  
A
C
D
E
e
max  
min  
max  
min  
1.1  
0.9  
43  
0.20  
0.12  
7.9  
3.7  
3.3  
2.7  
2.4  
106  
94  
1.6  
1.3  
63  
51  
1.2  
0.8  
47  
4.9  
4.4  
7°  
146  
130  
193  
173  
mil  
35  
4.7  
31  
Ƶ
The Recommended Mounting Pad Size  
1.6  
(63)  
1.6  
(63)  
2.2  
(86)  
mm  
Unit ˖  
(mil)  
3
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