08051J1R0BS--Datasheet/数据表在线中文翻译

Document Number: MW6IC2420N

Rev. 3, 12/2010

Freescale Semiconductor

Technical Data

RF LDMOS Integrated

Power Amplifier

The MW6IC2420NB integrated circuit is designed with on--chip matching

that makes it usable at 2450 MHz. This multi--stage structure is rated for 26 to

32 Volt operation and covers all typical industrial, scientific and medical

modulation formats.

MW6IC2420NBR1

2450 MHz, 20 W, 28 V

CW

RF LDMOS INTEGRATED POWER

AMPLIFIER

Driver Applications

•

Typical CW Performance at 2450 MHz: V_DD= 28 Volts, I_DQ1= 210 mA,

I_DQ2= 370 mA, P_out= 20 Watts

Power Gain — 19.5 dB

Power Added Efficiency — 27%

•

Capable of Handling 3:1 VSWR, @ 28 Vdc, 2170 MHz, 20 Watts CW

Output Power

Stable into a 3:1 VSWR. All Spurs Below --60 dBc @ 100 mW to 10 Watts

CW P_out

.

Features

•

Characterized with Series Equivalent Large--Signal Impedance Parameters

and Common Source Scattering Parameters

•

On--Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output)

Integrated Quiescent Current Temperature Compensation with

Enable/Disable Function ⁽¹⁾

•

Integrated ESD Protection

225°C Capable Plastic Package

RoHS Compliant

CASE 1329--09

TO--272 WB--16

PLASTIC

In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13 inch Reel

GND

DS1

NC

1

2

3

4

5

16

15

GND

NC

V

DS1

RF

V

/

out

RF

6

14

in

RF

RF /V

out DS2

DS2

in

7

8

NC

GS1

GS2

V

9

V

GS1

GS2

Quiescent Current

Temperature Compensation

10

13

12

NC

GND

V

DS1

(1)

GND

11

V

DS1

(Top View)

Note: Exposed backside of the package is

the source terminal for the transistors.

Figure 1. Functional Block Diagram

Figure 2. Pin Connections

1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control

for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1977 or AN1987.

MW6IC2420NBR1

RF Device Data

Freescale Semiconductor

1

Table 1. Maximum Ratings

Rating

Symbol

Value

--0.5, +68

--0.5, +6

--65 to +150

150

Unit

Vdc

°C

Drain--Source Voltage

V

DSS

Gate--Source Voltage

V

GS

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

Input Power

T

stg

T

C

°C

(1,2)

T

225

°C

J

P

23

dBm

in

Table 2. Thermal Characteristics

(2,3)

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

R

θ

°C/W

JC

W--CDMA Application

(P = 4.5 W Avg.)

out

Stage 1, 28 Vdc, I = 210 mA

1.8

1

DQ

Stage 2, 28 Vdc, I = 370 mA

DQ

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22--A114)

Machine Model (per EIA/JESD22--A115)

Charge Device Model (per JESD22--C101)

1A (Minimum)

A (Minimum)

III (Minimum)

Table 4. Moisture Sensitivity Level

Test Methodology

Rating

Package Peak

Temperature

Unit

Per JESD 22--A113, IPC/JEDEC J--STD--020

3

260

°C

Table 5. Electrical Characteristics (T = 25°C unless otherwise noted)

A

Characteristic

Symbol

Min

Typ

= 210 mA, I = 370 mA,

DQ2

Max

Unit

Functional Tests (In Freescale Wideband 2110--2170 MHz Test Fixture, 50 ohm system) V = 28 Vdc, I

DD

DQ1

P

= 4.5 W Avg., f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in

out

3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Channel Bandwidth @ ±10 MHz Offset. Input Signal

PAR = 8.5 dB @ 0.01% Probability on CCDF.

Power Gain

G

25.5

13.7

—

28

15

30

—

dB

%

ps

Power Added Efficiency

PAE

IM3

Intermodulation Distortion

-- 4 3

-- 4 6

-- 1 5

-- 4 0

-- 4 3

-- 1 0

dBc

dB

Adjacent Channel Power Ratio

Input Return Loss

ACPR

IRL

—

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access

MTTF calculators by product.

3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.

(continued)

MW6IC2420NBR1

RF Device Data

Freescale Semiconductor

2

Table 5. Electrical Characteristics (T = 25°C unless otherwise noted) (continued)

A

Characteristic

Symbol

Min

Typ

= 210 mA, I = 370 mA, 2110--2170 MHz

DQ2

Max

Unit

Typical Performances (In Freescale Test Fixture, 50 ohm system) V = 28 Vdc, I

DD

DQ1

Video Bandwidth @ 20 W PEP P where IM3 = --30 dBc

VBW

MHz

out

(Tone Spacing from 100 kHz to VBW)

∆IMD3 = IMD3 @ VBW frequency -- IMD3 @ 100 kHz <1 dBc (both

sidebands)

—

30

—

Quiescent Current Accuracy over Temperature

∆I

±5

%

QT

(1)

with 18 kΩ Gate Feed Resistors (--10 to 85°C)

Gain Flatness in 30 MHz Bandwidth @ P = 1 W CW

out

G

—

0.2

2

—

dB

F

Average Deviation from Linear Phase in 30 MHz Bandwidth

Φ

°

@ P = 1 W CW

out

Average Group Delay @ P = 1 W CW Including Output Matching

Delay

—

2.8

18

—

ns

out

Part--to--Part Insertion Phase Variation @ P = 1 W CW,

∆Φ

°

out

Six Sigma Window

Table 6. Electrical Characteristics (T = 25°C unless otherwise noted)

A

Characteristic

Symbol

Min

Typ

Max

Unit

Typical Performances (In Freescale Test Fixture, 50 ohm system) V = 28 Vdc, I

= 110 mA, I

—

= 370 mA, 2110--2170 MHz

DQ2

DD

DQ1

Saturated Pulsed Output Power

P

60

—

W

sat

(8 μsec(on), 1 msec(off))

1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control

for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1977 or AN1987.

MW6IC2420NBR1

RF Device Data

Freescale Semiconductor

3

V

DS2

1

2

3

4

5

DUT

16

C2

C11

V

DS1

NC 15

NC

C1

Z3

Z10

Z5

RF

INPUT

RF

OUTPUT

Z1

Z2

Z4

C6 Z6

Z7

Z8

Z9

14

6

C8

C14

C15

C7

C9

C10

7

8

9

NC

Z11

Quiescent Current

Temperature

Compensation

V

GS1

NC 13

12

10

11

C5

NC

R1

V

GS

C4

C12

C3

V

C13

R2

GS2

Z1

Z2

Z3, Z8

Z4

0.510″ x 0.054″ Microstrip

0.300″ x 0.054″ Microstrip

0.410″ x 0.054″ Microstrip

0.138″ x 0.237″ Microstrip

0.086″ x 0.237″ Microstrip

Z6

Z7

Z9

Z10, Z11

PCB

0.189″ x 0.237″ Microstrip

0.127″ x 0.054″ Microstrip

0.182″ x 0.054″ Microstrip

1.073″ x 0.054″ Microstrip

Z5

Taconic RF35, 0.020″, ε = 3.5

r

Figure 3. MW6IC2420NBR1 Test Circuit Schematic — 2450 MHz

Table 7. MW6IC2420NBR1 Test Circuit Component Designations and Values

Part

Description

Part Number

C32225X5R1H225MT

C1206C104K1KAC

08051J0R5BS

Manufacturer

C1, C2, C3, C4

2.2 μF Chip Capacitors

TDK

Kemet

AVX

C5, C13

C6, C7

C8

100 nF Chip Capacitors

0.5 pF Chip Capacitors

6.8 pF Chip Capacitor

08051J6R8BS

AVX

C9

2.2 pF Chip Capacitor

08051J2R2BS

AVX

C10

1 pF Chip Capacitor

08051J1R0BS

AVX

C11, C12

C14

5.6 pF Chip Capacitors

0.3 pF Chip Capacitor

08051J5R6BS

AVX

ATC100B0R3BT500XT

ATC100B0R5BT500XT

3224W--1--502E

ATC

C15

0.5 pF Chip Capacitor

ATC

R1, R2

5 kΩ Potentiometer CMS Cermet Multi--turn

Bourns

MW6IC2420NBR1

RF Device Data

Freescale Semiconductor

4

V

DS2

DS1

C2

C11

C9

C1

MW6IC2420

Rev. 0

C10

C6

C7

C8

C14

C15

C13

C5

C4

C12

C3

R1

R2

V

GS

Figure 4. MW6IC2420NBR1 Test Circuit Component Layout — 2450 MHz

MW6IC2420NBR1

RF Device Data

Freescale Semiconductor

5

TYPICAL CHARACTERISTICS — 2450 MHz

24

40

35

30

25

V

= 32 V

30 V

DD

23

22

21

28 V

G

ps

20

15

20

19

PAE

28 V

32 V 30 V

10

18

17

16

I

= 210 mA

= 370 mA

DQ1

DQ2

5

0

f = 2450 MHz

1

10

, OUTPUT POWER (WATTS) CW

50

P

out

Figure 5. Power Gain and Power Added Efficiency

versus CW Output Power as a Function of V_DD

22

40

35

30

25

21.5

21

G

ps

20.5

20

15

20

19.5

V

I

= 28 V

= 210 mA

= 370 mA

DD

DQ1

DQ2

10

19

18.5

18

5

0

PAE

P

f = 2450 MHz

0.5

1

10

50

, OUTPUT POWER (WATTS) CW

out

Figure 6. Power Gain and Power Added

Efficiency versus CW Output Power

9

24

10

23

22

21

20

19

8

10

I

= 620 mA

DQ

1st Stage

580 mA

7

10

540 mA

6

10

2nd Stage

18

17

16

5

G

10

ps

V

= 28 V

DD

f = 2450 MHz

4

10

0.5

1

10

, OUTPUT POWER (WATTS) CW

50

90

110

130

150

170

190

210

230

250

P

T , JUNCTION TEMPERATURE (°C)

J

out

This above graph displays calculated MTTF in hours when the device

is operated at V = 28 Vdc, P = 20 W Avg., and PAE = 27%.

Figure 7. Power Gain and Power Added

Efficiency versus CW Output Power as a

Function of Total I_DQ

DD

out

MTTF calculator available at http://www.freescale.com/rf. Select

Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

Figure 8. MTTF versus Junction Temperature

MW6IC2420NBR1

RF Device Data

Freescale Semiconductor

6

Z = 50 Ω

o

Z

load

Z

source

f = 2450 MHz

V

= 28 Vdc, I

= 210 mA, I = 370 mA, P = 20 W CW

DQ2 out

DD

DQ1

f

Z

load

source

MHz

Ω

2450

54.8 + j16.6

0.42 + j4.3

Z

=

Test circuit impedance as measured from

gate to ground.

source

=

Test circuit impedance as measured

from drain to ground.

load

Output

Matching

Network

Device

Under

Test

Input

Matching

Network

Z

source

load

Figure 9. Series Equivalent Source and Load Impedance

MW6IC2420NBR1

RF Device Data

Freescale Semiconductor

7

PACKAGE DIMENSIONS

MW6IC2420NBR1

RF Device Data

Freescale Semiconductor

8

MW6IC2420NBR1

RF Device Data

Freescale Semiconductor

9

MW6IC2420NBR1

RF Device Data

Freescale Semiconductor

10

PRODUCT DOCUMENTATION

Refer to the following documents to aid your design process.

Application Notes

•

AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages

AN1955: Thermal Measurement Methodology of RF Power Amplifiers

AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family

AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family

AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over--Molded Plastic Packages

Engineering Bulletins

EB212: Using Data Sheet Impedances for RF LDMOS Devices

•

REVISION HISTORY

The following table summarizes revisions to this document.

Revision

Date

Description

0

1

Mar. 2007

Apr. 2008

•

Initial Release of Data Sheet

•

Changed 220°C to 225°C in Capable Plastic Package bullet, p. 1

Added Footnote 1 to Quiescent Current Temperature bullet under Features section and to callout in Fig. 1,

Functional Block Diagram, p. 1

•

Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150°C, p. 2

Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related

“Continuous use at maximum temperature will affect MTTF” footnote added, p. 2

•

Replaced Case Outline 1329--09, Issue L, with 1329--09, Issue M, p. 8--10. Added pin numbers 1 through

17.

2

3

Feb. 2009

Dec. 2010

•

Changed Storage Temperature Range in Max Ratings table from --65 to +200 to --65 to +150 for

standardization across products, p. 2

Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification

number, PCN13232, p. 2

•

Corrected data sheet to reflect RF Test Reduction described in Product and Process Change Notification

number, PCN13232, and Product Discontinuance Notification number, PCN14260, adding applicable

overlay, p. 1, 2

MW6IC2420NBR1

RF Device Data

Freescale Semiconductor

11

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MW6IC2420NBR1

RF Device Data

Freescale Semiconductor

Document Number: MW6IC2420N

1^R2^{ev. 3, 12/2010}