1N4001 thru 1N4007
Taiwan Semiconductor
CREAT BY ART
Silicon Rectifiers
FEATURES
- High efficiency, Low VF
- High current capability
- High reliability
- Low power loss
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: DO-204AL (DO-41)
DO-204AL (DO-41)
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Weight: 0.33g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)
1N
1N
1N
1N
1N
1N
1N
PARAMETER
SYMBOL
UNIT
4001 4002 4003 4004 4005 4006 4007
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
50
35
50
100
70
200
140
200
400
280
400
1
600
420
600
800
560
800
1000
700
V
V
V
A
Maximum DC blocking voltage
100
1000
Maximum average forward rectified current
IF(AV)
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
IFSM
30
3.7
1.0
A
I2t
A2s
V
Rating for fusing (t<8.3ms)
Maximum instantaneous forward voltage (Note 1)
@ 1 A
VF
5
Maximum reverse current @ Rated VR TJ=25 ℃
TJ=125℃
IR
μA
50
Typical junction capacitance (Note 2)
10
Cj
RθjC
RθjL
RθjA
TJ
pF
6
15
OC/W
Typical Thermal Resistance
65
OC
OC
Operating junction temperature range
Storage temperature range
- 55 to +150
- 55 to +150
TSTG
Note 1: Pulse test with PW=300μs, 1% duty cycle
Note 2: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
Document Number: DS_D1405004
Version: H14