1N4001 THRU 1N4007
1.0AMP . SILICON RECTIFIERS
DO-41
FEATURE
.High current capability
.Low forward voltage drop
.Low power loss, high efficiency
.High surge capability
.787(20.0)
MIN.
.107(2.7)
.080(2.0)
DIA.
.High temperature soldering guaranteed
260°C /10sec/ 0.375" lead length at 5 lbs tension
+
.205(5.2)
.166(4.2)
MECHANICAL DATA
-
DIA.
.Terminal: Plated axial leads solderable per
MIL-STD 202E, method 208C
.032(0.8)
.025(0.65)
.787(20.0)
MIN.
.Case: Molded with UL-94 Class V-0 recognized
Flame Retardant Epoxy
.Polarity: color band denotes cathode
.Mounting position: any
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz,resistive or inductive load.
For capacitive load, derate current by 20%
1N
4001
50
1N
4002
100
70
1N
4003
200
140
200
1N
4004
400
280
400
1N
4005
600
420
600
1N
4006
800
560
800
1N
Type Number
SYMBOL
units
4007
1000
700
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
V
V
V
35
50
100
Maximum DC blocking Voltage
1000
Maximum Average Forward Rectified Current
.375"(9.5mm) lead length at TA =55°C
Peak Forward Surge Current 8.3ms single half
sine-wave superimposed on rated load (JEDEC
method)
IF(AV)
1.0
A
IFSM
30.0
A
Maximum Forward Voltage at 1.0A DC
Maximum Forward Voltage at 3.0A DC
VF
VF
1.0
1.3
V
V
Maximum DC Reverse Current
at rated DC blocking voltage
@TA =25°C
5.0
IR
µA
@TA =100°C
100.0
15
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance (Note 2)
Storage Temperature
CJ
R(JA)
TSTG
TJ
pF
°C/W
°C
75
-55 to +150
-55 to +150
°C
Operation Junction Temperature
Note:
1. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc
2. Thermal Resistance from Junction to Ambient at 0.375"（9.5mm）lead length, vertical P.C. Board Mounted.
- 341 -
