Discr ete P OWER & Sign a l
Tech n ologies
1N4001 - 1N4007
Features
1.0 min (25.4)
• Low forward voltage drop.
• High surge current capability.
Dimensions in
inches (mm)
0.205 (5.21)
0.160 (4.06)
DO-41
COLOR BAND DENOTES CATHODE
0.107 (2.72)
0.080 (2.03)
0.034 (0.86)
0.028 (0.71)
1.0 Ampere General Purpose Rectifiers
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
IO
Average Rectified Current
.375 " lead length @ TA = 75°C
Peak Forward Surge Current
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)
Total Device Dissipation
1.0
A
if(surge)
30
A
PD
2.5
20
50
W
mW/°C
°C/W
Derate above 25°C
Thermal Resistance, Junction to Ambient
RθJA
Tstg
TJ
Storage Temperature Range
-55 to +175
-55 to +150
°C
°C
Operating Junction Temperature
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics
TA = 25°C unless otherwise noted
Parameter
Device
Units
4001
4002
100
70
4003
200
140
200
4004
400
280
400
4005
600
420
600
4006
800
560
800
4007
1000
700
Peak Repetitive Reverse Voltage
Maximum RMS Voltage
50
35
50
V
V
V
100
1000
DC Reverse Voltage
Maximum Reverse Current
@ rated VR TA = 25°C
TA = 100°C
(Rated VR)
5.0
500
µA
µA
V
Maximum Forward Voltage @ 1.0 A
1.1
30
Maximum Full Load Reverse Current,
µA
Full Cycle
Typical Junction Capacitance
R = 4.0 V, f = 1.0 MHz
TA = 75°C
15
pF
V
1998 Fairchild Semiconductor Corporation
