1N4001S THRU 1N4007S
1.0AMP . SILICON RECTIFIERS
A-405
FEATURE
.High current capability
.Low forward voltage drop
.Low power loss, high efficiency
.High surge capability
.551(14.0)
MIN.
.107(2.7)
.080(2.0)
DIA.
.High temperature soldering guaranteed
260°C /10sec/ 0.375" lead length at 5 lbs tension
.Φ0.6mm leads
+
.205(5.2)
.166(4.2)
-
MECHANICAL DATA
.030(0.75)
DIA.
.Terminal: Plated axial leads solderable per
MIL-STD 202E, method 208C
.021(0.53)
.551(14.0)
MIN.
.Case: Molded with UL-94 Class V-0 recognized
Flame Retardant Epoxy
.Polarity: color band denotes cathode
.Mounting position: any
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz,resistive or inductive load.
For capacitive load, derate current by 20%
1N
1N
1N
1N
1N
1N
1N
Type Number
SYMBOL
units
4001S 4002S 4003S 4004S 4005S 4006S 4007S
50
35
50
100
70
200
140
200
400
280
400
600
420
600
800
560
800
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
1000
700
V
V
V
100
Maximum DC blocking Voltage
1000
Maximum Average Forward Rectified Current
.375"(9.5mm) lead length at TA =55°C
Peak Forward Surge Current 8.3ms single half
sine-wave superimposed on rated load (JEDEC
method)
IF(AV)
1.0
A
IFSM
30.0
A
Maximum Forward Voltage at 1.0A DC
Maximum Forward Voltage at 3.0A DC
VF
VF
1.0
1.3
V
V
Maximum DC Reverse Current
at rated DC blocking voltage
@TA =25°C
5.0
IR
µA
@TA =100°C
100.0
15
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance (Note 2)
Storage Temperature
CJ
R(JA)
TSTG
TJ
pF
°C/W
°C
75
-55 to +150
-55 to +150
°C
Operation Junction Temperature
Note:
1. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc
2. Thermal Resistance from Junction to Ambient at 0.375"（9.5mm）lead length, vertical P.C. Board Mounted.
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