GENERAL DATA — 500 mW DO-35 GLASS  
					APPLICATION NOTE — ZENER VOLTAGE  
					500  
					400  
					300  
					200  
					100  
					0
					Since the actual voltage available from a given zener diode  
					is temperature dependent, it is necessary to determine junc-  
					tiontemperatureunderanysetofoperatingconditionsinorder  
					to calculate its value. The following procedure is recom-  
					mended:  
					L
					L
					Lead Temperature, T , should be determined from:  
					L
					T = θ  
					L
					P
					LA D  
					+ T .  
					A
					2.4–60 V  
					θ
					isthelead-to-ambientthermalresistance(°C/W)andP is  
					LA  
					D
					the power dissipation. The value forθ willvaryanddepends  
					onthedevicemountingmethod.θ isgenerally30to40°C/W  
					for the various clips and tie points in common use and for  
					printed circuit board wiring.  
					LA  
					62–200 V  
					0.6  
					LA  
					0
					0.2  
					0.4  
					0.8  
					1
					The temperature of the lead can also be measured using a  
					thermocoupleplacedontheleadascloseaspossibletothetie  
					point. The thermal mass connected to the tie point is normally  
					large enough so that it will not significantly respond to heat  
					surges generated in the diode as a result of pulsed operation  
					once steady-state conditions are achieved. Using the mea-  
					L, LEAD LENGTH TO HEAT SINK (INCH)  
					Figure 2. Typical Thermal Resistance  
					1000  
					7000  
					5000  
					sured value of T , the junction temperature may be deter-  
					L
					TYPICAL LEAKAGE CURRENT  
					AT 80% OF NOMINAL  
					BREAKDOWN VOLTAGE  
					mined by:  
					T = T + ∆T .  
					JL  
					2000  
					1000  
					J
					L
					∆T is the increase in junction temperature above the lead  
					JL  
					700  
					temperature and may be found from Figure 2 for dc power:  
					500  
					∆T = θ P .  
					JL JL D  
					200  
					For worst-case design, using expected limits of I , limits of  
					Z
					100  
					70  
					P andtheextremesofT (∆T )maybeestimated.Changesin  
					D
					J
					J
					50  
					voltage, V , can then be found from:  
					Z
					∆V = θ T .  
					VZ J  
					20  
					θ
					, the zener voltage temperature coefficient, is found from  
					VZ  
					10  
					7
					Figures 4 and 5.  
					5
					Under high power-pulse operation, the zener voltage will  
					vary with time and may also be affected significantly by the  
					zenerresistance. Forbestregulation, keepcurrentexcursions  
					as low as possible.  
					Surge limitations are given in Figure 7. They are lower than  
					would be expected by considering only junction temperature,  
					as current crowding effects cause temperatures to be ex-  
					tremely high in small spots, resulting in device degradation  
					should the limits of Figure 7 be exceeded.  
					2
					1
					0.7  
					0.5  
					+125°C  
					0.2  
					0.1  
					0.07  
					0.05  
					0.02  
					0.01  
					0.007  
					0.005  
					+25°C  
					0.002  
					0.001  
					3
					4
					5
					6
					7
					8
					9
					10  
					11  
					12 13 14 15  
					V , NOMINAL ZENER VOLTAGE (VOLTS)  
					Z
					Figure 3. Typical Leakage Current  
					Motorola TVS/Zener Device Data  
					500 mW DO-35 Glass Data Sheet  
					6-4