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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
August 2016  
FDMC013P030Z  
P-Channel PowerTrench® MOSFET  
-30 V, -54 A, 7.0 mΩ  
Features  
General Description  
This P-Channel MOSFET is produced using Fairchild  
Semiconductor’s advanced PowerTrench process that has been  
optimized for rDS(on), switching performance and ruggedness.  
„ Max rDS(on) = 7.0 mΩ at VGS = -10 V, ID = -14 A  
„ Max rDS(on) = 12.0 mΩ at VGS = -4.5 V, ID = -10 A  
„ High Performance Trench Technology for Extremely Low  
rDS(on)  
Applications  
„ Battery Management  
„ Load Switch  
„ High Power and Current Handling Capability in a Widely Used  
Surface Mount Package  
„ Termination is Lead-free and RoHS Compliant  
„ HBM ESD Capability Level > 4 kV Typical (Note 4)  
Bottom  
Top  
S
Pin 1  
D
G
S
S
S
S
G
D
D
D
S
D
D
D
D
MLP 3.3x3.3  
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted.  
Symbol  
VDS  
VGS  
Parameter  
Ratings  
-30  
Units  
Drain to Source Voltage  
Gate to Source Voltage  
Drain Current -Continuous  
Drain Current -Continuous  
-Continuous  
V
V
±25  
TC = 25 °C  
TC = 100 °C  
TA = 25 °C  
(Note 5)  
(Note 5)  
(Note 1a)  
(Note 4)  
(Note 3)  
-54  
-35  
ID  
A
-14  
-Pulsed  
-309  
54  
EAS  
Single Pulse Avalanche Energy  
Power Dissipation  
mJ  
W
TC = 25 °C  
TA = 25 °C  
30  
PD  
Power Dissipation  
(Note 1a)  
2.4  
TJ, TSTG  
Operating and Storage Junction Temperature Range  
-55 to +150  
°C  
Thermal Characteristics  
RθJC  
RθJA  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
4.2  
53  
°C/W  
(Note 1a)  
Package Marking and Ordering Information  
Device Marking  
Device  
Package  
Reel Size  
13 ’’  
Tape Width  
12 mm  
Quantity  
FDMC013P030Z  
FDMC013P030Z  
MLP 3.3x3.3  
3000 units  
©2016 Fairchild Semiconductor Corporation  
FDMC013P030Z Rev.1.0  
www.fairchildsemi.com  
1
Electrical Characteristics TJ = 25 °C unless otherwise noted.  
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
Units  
Off Characteristics  
BVDSS  
Drain to Source Breakdown Voltage  
ID = -250 μA, VGS = 0 V  
-30  
V
ΔBVDSS  
ΔTJ  
Breakdown Voltage Temperature  
Coefficient  
I
D = -250 μA, referenced to 25 °C  
-13  
mV/°C  
IDSS  
IGSS  
Zero Gate Voltage Drain Current  
Gate to Source Leakage Current  
VDS = -24 V, VGS = 0 V  
VGS = ±25 V, VDS = 0 V  
-1  
μA  
μA  
±10  
On Characteristics  
VGS(th)  
Gate to Source Threshold Voltage  
VGS = VDS, ID = -250 μA  
-1  
-1.6  
5
-3  
V
ΔVGS(th)  
ΔTJ  
Gate to Source Threshold Voltage  
Temperature Coefficient  
I
D = -250 μA, referenced to 25 °C  
GS = -10 V, ID = -14 A  
mV/°C  
V
5.0  
8.0  
6.2  
60  
7.0  
rDS(on)  
gFS  
Static Drain to Source On Resistance  
Forward Transconductance  
VGS = -4.5 V, ID = -10 A  
12.0  
10.4  
mΩ  
VGS = -10 V, ID = -14 A, TJ = 125 °C  
VDS = -5 V, ID = -14 A  
S
Dynamic Characteristics  
Ciss  
Coss  
Crss  
Input Capacitance  
4130  
1355  
1335  
5785  
1895  
1870  
pF  
pF  
pF  
VDS = -15 V, VGS = 0 V,  
f = 1 MHz  
Output Capacitance  
Reverse Transfer Capacitance  
Switching Characteristics  
td(on)  
tr  
td(off)  
tf  
Turn-On Delay Time  
Rise Time  
34  
157  
55  
94  
96  
58  
11  
55  
251  
88  
ns  
ns  
VDD = -15 V, ID = -14 A,  
V
GS = -4.5 V, RGEN = 6 Ω  
Turn-Off Delay Time  
Fall Time  
ns  
150  
135  
81  
ns  
Qg  
Total Gate Charge  
Total Gate Charge  
Gate to Source Charge  
Gate to Drain “Miller” Charge  
VGS = 0 V to -10 V  
VGS = 0 V to -4.5 V  
nC  
nC  
nC  
nC  
Qg  
VDD = -15 V,  
D = -14 A  
I
Qgs  
Qgd  
36  
Drain-Source Diode Characteristics  
V
GS = 0 V, IS = -14 A  
(Note 2)  
(Note 2)  
-0.8  
-0.7  
44  
-1.3  
-1.2  
77  
VSD  
Source to Drain Diode Forward Voltage  
V
VGS = 0 V, IS = -2 A  
trr  
Reverse Recovery Time  
ns  
IF = -14 A, di/dt = 100 A/μs  
Qrr  
Reverse Recovery Charge  
23  
37  
nC  
NOTES:  
2
1. R  
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R  
is determined by the user's board design.  
θCA  
θJA  
b) 125°C/W when mounted on a  
minimum pad  
a)  
53°C/W when mounted on a  
1 in pad of 2 oz copper  
2
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %.  
3. E of 54 mJ is based on starting T = 25 °C, L = 3 mH, I = 6 A, V =30 V, V = 10 V.  
AS  
J
AS  
DD  
GS  
4. Pulsed Id please refer to Fig 11 SOA graph for more details.  
5. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal & electro-mechanical application board design.  
©2016 Fairchild Semiconductor Corporation  
FDMC013P030Z Rev.1.0  
www.fairchildsemi.com  
2
Typical Characteristics TJ = 25 °C unless otherwise noted.  
250  
5
4
3
2
1
0
VGS = -10 V  
VGS = -6 V  
PULSE DURATION = 80 μs  
DUTY CYCLE = 0.5% MAX  
VGS = -5 V  
VGS = -4.5 V  
200  
VGS = -3.5 V  
VGS = -4.5 V  
150  
VGS = -3.5 V  
100  
50  
VGS = -10 V  
VGS = -6 V  
VGS = -5 V  
PULSE DURATION = 80 μs  
DUTY CYCLE = 0.5% MAX  
0
0
1
2
3
4
5
0
50  
100  
150  
200  
-VDS, DRAIN TO SOURCE VOLTAGE (V)  
-ID, DRAIN CURRENT (A)  
Figure 1. On Region Characteristics  
Figure2. N o r m a l i z e d O n - R e s i s ta n c e  
vs. Drain Current and Gate Voltage  
1.5  
50  
ID = -14 A  
PULSE DURATION = 80 μs  
DUTY CYCLE = 0.5% MAX  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
VGS = -10 V  
40  
30  
20  
10  
0
ID = -14 A  
TJ = 125 o  
C
TJ = 25 o  
C
-75 -50 -25  
0
25 50 75 100 125 150  
2
4
6
8
10  
TJ, JUNCTION TEMPERATURE (oC)  
-VGS, GATE TO SOURCE VOLTAGE (V)  
Figure 3. Normalized On Resistance  
vs. Junction Temperature  
Figure4. On-Resistance vs. Gate to  
Source Voltage  
250  
250  
PULSE DURATION = 80 μs  
DUTY CYCLE = 0.5% MAX  
100  
VGS = 0 V  
200  
150  
100  
50  
10  
VDS = -5 V  
TJ = 150 o  
C
1
TJ = 25 oC  
0.1  
TJ = 150 o  
C
TJ = -55 o  
C
0.01  
0.001  
TJ = 25 o  
TJ = -55 o  
C
C
0
1
2
3
4
5
6
7
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
-VSD, BODY DIODE FORWARD VOLTAGE (V)  
-VGS, GATE TO SOURCE VOLTAGE (V)  
Figure 5. Transfer Characteristics  
Figure6. Source to Drain Diode  
Forward Voltage vs. Source Current  
©2016 Fairchild Semiconductor Corporation  
FDMC013P030Z Rev.1.0  
www.fairchildsemi.com  
3
Typical Characteristics TJ = 25 °C unless otherwise noted.  
10  
10000  
ID = -14 A  
8
Ciss  
VDD = -15 V  
6
VDD = -10 V  
VDD = -20 V  
4
Coss  
f = 1 MHz  
GS = 0 V  
2
0
V
Crss  
1000  
800  
0
20  
40  
60  
80  
100  
120  
0.1  
1
10  
30  
-VDS, DRAIN TO SOURCE VOLTAGE (V)  
Qg, GATE CHARGE (nC)  
Figure 7. Gate Charge Characteristics  
Figure8. C a p a c i t a n c e v s . D r a i n  
to Source Voltage  
60  
45  
30  
15  
0
50  
VGS = -10 V  
TJ = 25 oC  
10  
TJ = 100 o  
C
VGS = -4.5 V  
TJ = 125 o  
C
RθJC = 4.2 oC/W  
1
0.001  
0.01  
0.1  
1
10  
100  
25  
50  
75  
100  
125  
150  
TC, CASE TEMPERATURE (oC)  
tAV, TIME IN AVALANCHE (ms)  
Figure9. U n c l a m p e d I n d u c t i v e  
Switching Capability  
Figure10. Maximum Continuous Drain  
Current vs. Case Temperature  
10-4  
2000  
1000  
VDS = 0 V  
THIS AREA IS  
LIMITED BY rDS(on)  
10-5  
10 μs  
100  
10  
1
TJ = 125 oC  
10-6  
100 μs  
10-7  
1 ms  
TJ = 25 o  
C
SINGLE PULSE  
TJ = MAX RATED  
RθJC = 4.2 oC/W  
10-8  
10-9  
10 ms  
100 ms/ DC  
CURVE BENT TO  
MEASURED DATA  
T
C = 25 oC  
0.1  
0.1  
0
5
10  
15  
20  
25  
30  
1
10  
100 200  
-VGS, GATE TO SOURCE VOLTAGE (V)  
-VDS, DRAIN to SOURCE VOLTAGE (V)  
Figure 12. Igss vs. Vgss  
Figure 11. Forward Bias Safe  
Operating Area  
©2016 Fairchild Semiconductor Corporation  
FDMC013P030Z Rev.1.0  
www.fairchildsemi.com  
4
Typical Characteristics TJ = 25 °C unless otherwise noted.  
10000  
SINGLE PULSE  
RθJC = 4.2 oC/W  
TC = 25 o  
C
1000  
100  
10  
10-5  
10-4  
10-3  
10-2  
10-1  
1
t, PULSE WIDTH (sec)  
Figure 13. Single Pulse Maximum Power Dissipation  
2
DUTY CYCLE-DESCENDING ORDER  
1
D = 0.5  
0.2  
P
DM  
0.1  
0.1  
0.05  
0.02  
0.01  
t
1
t
2
NOTES:  
(t) = r(t) x R  
0.01  
0.001  
Z
θJC  
θJC  
o
R
= 4.2 C/W  
θJC  
SINGLE PULSE  
Peak T = P  
x Z (t) + T  
J
DM  
θJC C  
Duty Cycle, D = t / t  
1
2
10-5  
10-4  
10-3  
10-2  
10-1  
1
t, RECTANGULAR PULSE DURATION (sec)  
Figure 14. Junction to Case Transient Thermal Response Curve  
©2016 Fairchild Semiconductor Corporation  
FDMC013P030Z Rev.1.0  
www.fairchildsemi.com  
5
(3.40)  
2.37  
0.05 C  
B
3.30  
A
8
5
2X  
0.45(4X)  
(0.40)  
2.15  
(1.70)  
3.30  
KEEP OUT  
AREA  
(0.65)  
0.70(4X)  
0.05 C  
PIN#1 IDENT  
1
4
TOP VIEW  
SIDE VIEW  
0.65  
0.42(8X)  
2X  
1.95  
ꢀꢁꢅꢃ“ꢀꢁꢀꢃ  
RECOMMENDED LAND PATTERN  
0.10 C  
0.08 C  
ꢀꢁꢂꢃ“ꢀꢁꢀꢃ  
ꢀꢁꢀꢄꢃ“ꢀꢁꢀꢄꢃ  
NOTES:  
C
SEATING  
A. DOES NOT CONFORM TO JEDEC  
REGISTRATION MO-229  
PLANE  
B. DIMENSIONS ARE IN MILLIMETERS.  
ꢆꢁꢆꢀ“ꢀꢁꢀꢃ  
C. DIMENSIONS AND TOLERANCES PER  
ASME Y14.5M, 2009.  
2.27+0.05  
(0.50)4X  
PIN #1 IDENT  
(0.79)  
D. LAND PATTERN RECOMMENDATION IS  
EXISTING INDUSTRY LAND PATTERN.  
1
4
ꢀꢁꢃꢀ“ꢀꢁꢀꢃꢇꢊ;ꢉ  
E. DRAWING FILENAME: MKT-MLP08Srev3.  
(0.35)  
(1.15)  
ꢆꢁꢆꢀ“ꢀꢁꢀꢃ  
R0.15  
ꢄꢁꢀꢀ“ꢀꢁꢀꢃ  
ꢀꢁꢆꢀ“ꢀꢁꢀꢃꢇꢆ;ꢉ  
8
5
ꢀꢁꢆꢃ“ꢀꢁꢀꢃꢇꢈ;ꢉ  
0.65  
0.10  
C A B  
1.95  
0.05  
C
BOTTOM VIEW  
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent  
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.  
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,  
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or  
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer  
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not  
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification  
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized  
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and  
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such  
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