C0G (NP0) Dielectric  
					Specifications and Test Methods  
					Parameter/Test  
					Operating Temperature Range  
					Capacitance  
					NP0 Specification Limits  
					-55ºC to +125ºC  
					Measuring Conditions  
					Temperature Cycle Chamber  
					Within specified tolerance  
					Freq.: 1.0 MHz ± 10% for cap ≤ 1000 pF  
					1.0 kHz ± 10% for cap > 1000 pF  
					Voltage: 1.0Vrms ± .2V  
					<30 pF: Q≥ 400+20 x Cap Value  
					≥30 pF: Q≥ 1000  
					Q
					Charge device with rated voltage for  
					60 ± 5 secs @ room temp/humidity  
					100,000MΩ or 1000MΩ - µF,  
					whichever is less  
					Insulation Resistance  
					Charge device with 250% of rated voltage for  
					1-5 seconds, w/charge and discharge current  
					limited to 50 mA (max)  
					Dielectric Strength  
					No breakdown or visual defects  
					Note: Charge device with 150% of rated  
					voltage for 500V devices.  
					Deflection: 2mm  
					Appearance  
					No defects  
					Test Time: 30 seconds  
					Capacitance  
					Variation  
					±5% or ±.5 pF, whichever is greater  
					Resistance to  
					Flexure  
					Q
					Meets Initial Values (As Above)  
					≥ Initial Value x 0.3  
					Stresses  
					Insulation  
					Resistance  
					Dip device in eutectic solder at 230 ± 5ºC  
					for 5.0 ± 0.5 seconds  
					≥ 95% of each terminal should be covered  
					with fresh solder  
					Solderability  
					Appearance  
					No defects, <25% leaching of either end terminal  
					≤ ±2.5% or ±.25 pF, whichever is greater  
					Capacitance  
					Variation  
					Dip device in eutectic solder at 260ºC for 60sec-  
					onds. Store at room temperature for 24 ± 2hours  
					before measuring electrical properties.  
					Resistance to  
					Q
					Meets Initial Values (As Above)  
					Meets Initial Values (As Above)  
					Solder Heat  
					Insulation  
					Resistance  
					Dielectric  
					Strength  
					Meets Initial Values (As Above)  
					Appearance  
					No visual defects  
					Step 1: -55ºC ± 2º  
					30 ± 3 minutes  
					Capacitance  
					Variation  
					≤ ±2.5% or ±.25 pF, whichever is greater  
					Step 2: Room Temp  
					≤ 3 minutes  
					Thermal  
					Shock  
					Q
					Meets Initial Values (As Above)  
					Meets Initial Values (As Above)  
					Step 3: +125ºC ± 2º  
					Step 4: Room Temp  
					30 ± 3 minutes  
					Insulation  
					≤ 3 minutes  
					Resistance  
					Dielectric  
					Strength  
					Repeat for 5 cycles and measure after  
					Meets Initial Values (As Above)  
					24 hours at room temperature  
					Appearance  
					No visual defects  
					Capacitance  
					Variation  
					≤ ±3.0% or ± .3 pF, whichever is greater  
					Charge device with twice rated voltage in  
					test chamber set at 125ºC ± 2ºC  
					for 1000 hours (+48, -0).  
					≥ 30 pF:  
					Q≥ 350  
					Q
					Load Life  
					≥10 pF, <30 pF:  
					<10 pF:  
					Q≥ 275 +5C/2  
					Q≥ 200 +10C  
					(C=Nominal Cap)  
					Remove from test chamber and stabilize at  
					room temperature for 24 hours  
					before measuring.  
					Insulation  
					≥ Initial Value x 0.3 (See Above)  
					Meets Initial Values (As Above)  
					Resistance  
					Dielectric  
					Strength  
					Appearance  
					No visual defects  
					Capacitance  
					Variation  
					≤ ±5.0% or ± .5 pF, whichever is greater  
					Store in a test chamber set at 85ºC ± 2ºC/  
					85% ± 5% relative humidity for 1000 hours  
					(+48, -0) with rated voltage applied.  
					≥ 30 pF:  
					≥10 pF, <30 pF:  
					<10 pF:  
					Q≥ 350  
					Load  
					Q
					Q≥ 275 +5C/2  
					Q≥ 200 +10C  
					Humidity  
					Remove from chamber and stabilize at room  
					Insulation  
					≥ Initial Value x 0.3 (See Above)  
					temperature for 24 ± 2 hours before measuring.  
					Resistance  
					Dielectric  
					Strength  
					Meets Initial Values (As Above)  
					051818  
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