JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
DO-41 Plastic-Encapsulate Diodes
G eneral Purpose Rectifier Diodes
1N4001 THRU 1N4007
Features
● IF(AV)
1A
DO-41
● VRRM
50V-1000V
● High surge current capability
●
Polarity: Color band denotes cathode
Applications
● Rectifier
Marking
● 1N400X
:
X From 1To 7
Limiting Values(Absolute Maximum Rating)
1N40
Item
Symbol Unit
Test Conditions
02
03
04 05 06
07
01
VRRM
V
Repetitive Peak Reverse Voltage
MaximumRMS Voltage
50
35
50
100
70
800 1000
700
600
200 400
140 280 420 560
V
V
V
RMS
Maximum DC Blocking Voltage
VDC
100
800 1000
600
200 400
60Hz Half-sine wave,
Resistance load,Ta=75℃
Average Forward Current
1
IF(AV)
IFSM
A
A
60Hz Half-sine wave,
1 cycle,Ta=25℃
Surge(Non-repetitive)Forward
Current
30
TJ
℃
℃
Junction Temperature
Storage Temperature
-55 ~ +150
-55 ~ +150
TSTG
Electrical Characteristics (T=25℃ Unless otherwise specified)
Symbol Unit
Test Condition
Max
Item
VFM
V
IFM =1.0A
Maximum Peak Forward Voltage
1.1
5
IRRM1
T =25℃
a
Maximum Peak Reverse Current
Typical junction capacitance
Typical Thermal Resistance
VRM=VRRM
μA
50
IRRM2
T =100℃
a
Measured at 1MHz and applied
reverse voltage of 4.0V D.C.
CJ
pF
15
50
Rθ
Between junction and ambient
J-A
℃/
W
8
Rθ
Between junction and Lead
J-L
Notes:
Thermal resistance from junction to ambient at 0.375” (9.5mm)lead length,P.C.B. mounted
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Rev. - 1.0
1