RoHS  
					1N4001G THRU 1N4007G  
					General Purpose Rectifier  
					COMPLIANT  
					Features  
					● High efficiency  
					● High current capability  
					● High reliability  
					● High surge current capability  
					● Low power loss  
					● Glass passivated chip junction  
					● Solder dip 275 °C max. 7 s, per JESD 22-B106  
					Typical Applications  
					For use in general purpose rectification of power  
					supplies, inverters, converters, and freewheeling diodes for  
					consumer, and telecommunication.  
					Mechanical Data  
					●
					ackage: DO-204AL(DO-41)  
					P
					Molding compound meets UL 94 V-0 flammability rating,  
					RoHS-compliant  
					● Terminals: Tin plated leads, solderable per J-STD-  
					002 and JESD22-B102  
					●
					Color band denotes cathode end  
					Polarity:  
					(Ta=25℃ Unless otherwise specified)  
					■Maximum Ratings  
					1N4001G 1N4002G 1N4003G 1N4004G 1N4005G 1N4006G 1N4007G  
					PARAMETER  
					SYMBOL UNIT  
					1N4003  
					G
					1N4004  
					G
					1N4001G 1N4002G  
					1N4005G 1N4006G 1N4007G  
					Device marking code  
					V
					V
					V
					V
					V
					A
					50  
					35  
					50  
					100  
					70  
					200  
					140  
					200  
					400  
					280  
					400  
					1.0  
					600  
					420  
					600  
					800  
					560  
					800  
					1000  
					700  
					Maximum Repetitive Peak Reverse Voltage  
					Maximum RMS Voltage  
					RRM  
					RMS  
					V
					100  
					1000  
					Maximum DC blocking Voltage  
					DC  
					Average Forward Current  
					@60Hz sine wave, Resistance load, Ta =85℃  
					IF(AV)  
					Forward Surge Current (Non-repetitive)  
					@60Hz Half-sine wave,1 cycle, Tj=25℃  
					Forward Surge Current (Non-repetitive)  
					30  
					IFSM  
					A
					60  
					@1ms, square wave, 1 cycle, Tj=25℃  
					Current squared time  
					@1ms≤t8.3≤ms Tj=25℃,Rating of per diode  
					Typical junction capacitance  
					@Measured at 1MHz and Applied Reverse  
					Voltage of 4.0 V.D.C  
					A2s  
					pF  
					I2t  
					Cj  
					3.735  
					6
					T
					-55 ~ +150  
					-55 ~ +150  
					Storage Temperature  
					Junction Temperature  
					stg  
					℃
					℃
					T
					j
					(T =25℃ Unless otherwise specified)  
					■Electrical Characteristics  
					a
					1N4001G 1N4002G 1N4003G 1N4004G1N4005G 1N4006G 1N4007G  
					PARAMETER  
					SYMBOL  
					UNIT  
					TEST CONDITIONS  
					Maximum instantaneous  
					forward voltage drop per diode  
					V
					I
					=1.0A  
					V
					1.1  
					2.5  
					50  
					F
					FM  
					T =25℃  
					j
					Maximum DC reverse current  
					at rated DC blocking voltage  
					per diode  
					I
					μA  
					R
					T =125℃  
					j
					1 / 4  
					Yangzhou Yangjie Electronic Technology Co., Ltd.  
					S-A016  
					Rev.2.2,30-Jan-21  
					www.21yangjie.com