转到网站首页
转为中文步骤：
1、请用电脑端360浏览器打开本页地址，如您电脑未安装360浏览器，请点这里下载;
2、点击360浏览器右上角的翻译插件，如右图红圈中所示:
3、点击所弹出窗口里的右下角的按钮 “翻译当前网页”;
4、弹窗提示翻译完毕后关闭弹窗即可；
10-FY126PA021ME-L227F68  
target datasheet  
fastPACK 1 SiC  
1200 V / 21 mΩ  
Topology features  
flow 1 12 mm housing  
● 3xHalf Bridge  
● Open Emitter configuration  
● Kelvin Emitter for improved switching performance  
● Temperature sensor  
Component features  
● High Blocking Voltage with low drain source on state resistance  
● High speed SiC-MOSFET technology  
● Resistant to Latch-up  
Housing features  
● Base isolation: Al2O3  
Schematic  
● Convex shaped substrate for superior thermal contact  
● Thermo-mechanical push-and-pull force relief  
● Solder pin  
Target applications  
● Elevator Drives  
Types  
● 10-FY126PA021ME-L227F68  
14 Oct. 2023 / Revision 2  
Copyright Vincotech  
1
10-FY126PA021ME-L227F68  
target datasheet  
Maximum Ratings  
Tj = 25 °C, unless otherwise specified  
Parameter  
Symbol  
Conditions  
Value  
Unit  
Inverter Switch  
VDSS  
Drain-source voltage  
1200  
48  
V
A
ID  
Drain current (DC current)  
Peak drain current  
Tj = Tjmax  
Tj = Tjmax  
dynamic  
Ts = 80 °C  
Ts = 80 °C  
TBD  
IDM  
A
Ptot  
Total power dissipation  
88  
W
-4 / 15  
-8 / 19  
175  
VGSS  
Gate-source voltage  
V
Tjmax  
Maximum Junction Temperature  
°C  
Module Properties  
Thermal Properties  
Tstg  
Tjop  
Storage temperature  
-40…+125  
°C  
°C  
Operation temperature under switching  
condition  
-40…+(Tjmax - 25)  
Isolation Properties  
Isolation voltage  
Isolation voltage  
Creepage distance  
Clearance  
Visol  
Visol  
DC Test Voltage*  
AC Voltage  
tp = 2 s  
6000  
2500  
V
tp = 1 min  
V
>12,7  
12,12  
≥ 600  
mm  
mm  
Comparative Tracking Index  
*100 % tested in production  
CTI  
14 Oct. 2023 / Revision 2  
Copyright Vincotech  
2
10-FY126PA021ME-L227F68  
target datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VGE [V]  
VGS [V]  
Min  
Max  
VF [V]  
IF [A]  
Inverter Switch  
Static  
27,3(1)  
3,6  
mΩ  
V
TBD  
TBD  
rDS(on)  
VGS(th)  
IGSS  
IDSS  
rg  
21(1)  
2,5  
20  
Drain-source on-state resistance  
Gate-source threshold voltage  
Gate to Source Leakage Current  
Zero Gate Voltage Drain Current  
Internal gate resistance  
15  
25  
25  
25  
25  
14,7  
1,8  
VDS = VGS  
15  
0
0
200  
26  
nA  
µA  
1200  
2
1,85  
2,3  
2,75  
Ω
pF  
Ciss  
Short-circuit input capacitance  
Diode forward voltage  
0
TBD  
TBD  
TBD  
4,6  
VSD  
-4  
25  
V
Thermal  
λpaste = 3,4 W/mK  
(PSX)  
Thermal resistance junction to sink(2)  
1,08  
K/W  
Rth(j-s)  
14 Oct. 2023 / Revision 2  
Copyright Vincotech  
3
10-FY126PA021ME-L227F68  
target datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VGE [V]  
VGS [V]  
Min  
Max  
VF [V]  
IF [A]  
Dynamic  
25  
71,28  
62,4  
td(on)  
Turn-on delay time  
125  
150  
25  
ns  
ns  
61,15  
41,54  
36,82  
35,79  
205,18  
223,22  
227,8  
14,54  
14,88  
15,48  
2,41  
tr  
td(off)  
tf  
Rise time  
125  
150  
25  
Rgon = 21,33 Ω  
Rgoff = 21,33 Ω  
Turn-off delay time  
125  
150  
25  
ns  
Fall time  
125  
150  
25  
ns  
QrFWD=0,2 µC  
QrFWD=0,853 µC  
QrFWD=1,17 µC  
Eon  
Turn-on energy (per pulse)  
Turn-off energy (per pulse)  
Peak recovery current  
Reverse recovery time  
Recovered charge  
125  
150  
25  
2,28  
mWs  
mWs  
A
2,36  
1,17  
Eoff  
-4/15  
600  
64  
125  
150  
25  
1,15  
1,13  
17,92  
24,4  
IRRM  
125  
150  
25  
28,24  
18,79  
82,48  
89,84  
0,2  
trr  
125  
150  
25  
ns  
di/dt=1690 A/µs  
di/dt=2188 A/µs  
di/dt=2027 A/µs  
Qr  
125  
150  
25  
0,853  
1,17  
μC  
0,013  
0,217  
0,317  
3125,15  
1245,57  
273,94  
Erec  
Reverse recovered energy  
Peak rate of fall of recovery current  
125  
150  
25  
mWs  
A/µs  
(dirf/dt)max  
125  
150  
14 Oct. 2023 / Revision 2  
Copyright Vincotech  
4
10-FY126PA021ME-L227F68  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VF [V] IF [A]  
VGE [V]  
VGS [V]  
Min  
Max  
Thermistor  
Static  
R
ΔR/R  
P
Rated resistance  
Deviation of R100  
Power dissipation  
Power dissipation constant  
B-value  
25  
22  
kΩ  
%
R100 = 1484 Ω  
100  
25  
-5  
5
130  
1,5  
mW  
mW/K  
K
d
25  
B(25/50)  
Tol. ±1 %  
Tol. ±1 %  
3962  
4000  
B(25/100)  
B-value  
K
Vincotech Thermistor Reference  
I
(1)  
Value at chip level  
(2)  
Only valid with pre-applied Vincotech thermal interface material.  
14 Oct. 2023 / Revision 2  
Copyright Vincotech  
5
10-FY126PA021ME-L227F68  
target datasheet  
Inverter Switch Characteristics  
figure 1.  
MOSFET  
figure 2.  
MOSFET  
Typical output characteristics  
Typical output characteristics  
ID = f(VDS  
)
ID = f(VDS)  
250  
250  
200  
150  
100  
50  
VGS  
:
-4 V  
-2 V  
0 V  
1 V  
3 V  
5 V  
7 V  
9 V  
11 V  
13 V  
15 V  
17 V  
19 V  
21 V  
200  
150  
100  
50  
0
-50  
-100  
-150  
-200  
-250  
0
0,0  
2,5  
5,0  
7,5  
10,0  
12,5  
-20  
-15  
-10  
-5  
0
5
10  
15  
V
DS(V)  
VDS(V)  
tp  
=
tp  
=
250  
15  
μs  
V
250  
150  
μs  
°C  
25 °C  
125 °C  
150 °C  
VGS  
=
Tj =  
Tj:  
VGS from -4 V to 21 V in steps of 2 V  
figure 3.  
MOSFET  
figure 4.  
MOSFET  
Typical transfer characteristics  
Typical reverse drain current characteristics  
ID = f(VGS  
)
ISD = f(VSD)  
125  
300  
250  
200  
150  
100  
50  
100  
75  
50  
25  
0
0
0,0  
0
2
4
6
8
10  
2,5  
5,0  
7,5  
10,0  
12,5  
V
GS(V)  
VSD(V)  
tp  
=
=
tp  
=
250  
10  
μs  
V
250  
15  
μs  
V
25 °C  
125 °C  
150 °C  
25 °C  
125 °C  
150 °C  
VDS  
VGS =  
Tj:  
Tj:  
14 Oct. 2023 / Revision 2  
Copyright Vincotech  
6
10-FY126PA021ME-L227F68  
target datasheet  
Inverter Switch Characteristics  
figure 5.  
MOSFET  
Transient thermal impedance as a function of pulse width  
Zth(j-s) = f(tp)  
1
10  
0
10  
-1  
10  
0,5  
0,2  
0,1  
-2  
10  
0,05  
0,02  
0,01  
0,005  
0
-3  
10  
10  
-5  
-4  
10  
-3  
10  
-2  
10  
-1  
10  
0
1
2
10  
10  
10  
tp(s)  
D =  
tp / T  
1,079  
Rth(j-s)  
=
K/W  
MOSFET thermal model values  
R (K/W)  
τ (s)  
1,68E-02  
1,21E-01  
7,02E-01  
1,83E-01  
5,64E-02  
1,34E+01  
1,08E+00  
9,29E-02  
7,23E-03  
3,86E-04  
14 Oct. 2023 / Revision 2  
Copyright Vincotech  
7
10-FY126PA021ME-L227F68  
target datasheet  
Thermistor Characteristics  
figure 6.  
Thermistor  
Typical NTC characteristic as function of temperature  
RT = f(T)  
25000  
20000  
15000  
10000  
5000  
0
20  
40  
60  
80  
100  
120  
140  
T(°C)  
14 Oct. 2023 / Revision 2  
Copyright Vincotech  
8
10-FY126PA021ME-L227F68  
target datasheet  
Inverter Switching Characteristics  
figure 7.  
MOSFET  
figure 8.  
MOSFET  
Typical switching energy losses as a function of drain current  
Typical switching energy losses as a function of MOSFET turn on gate resistor  
E = f(ID)  
E = f(Rg)  
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
Eon  
Eon  
Eon  
Eon  
Eon  
Eon  
Eoff  
Eoff  
Eoff  
Eoff  
Eoff  
Eoff  
0
25  
50  
75  
100  
125  
0
10  
20  
30  
40  
50  
60  
70  
ID(A)  
Rg(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VDS  
=
=
=
=
VDS  
VGS  
ID  
=
=
=
600  
V
V
Ω
Ω
125 °C  
150 °C  
600  
-4/15  
64  
V
125 °C  
150 °C  
Tj:  
Tj:  
VGS  
-4/15  
21,33  
21,33  
V
A
Rgon  
Rgoff  
figure 9.  
MOSFET  
figure 10.  
MOSFET  
Typical reverse recovered energy loss as a function of drain current  
Typical reverse recovered energy loss as a function of MOSFET turn on gate resistor  
Erec = f(ID)  
Erec = f(Rg)  
0,6  
0,5  
0,4  
0,3  
0,2  
0,1  
0,0  
0,35  
0,30  
0,25  
0,20  
0,15  
0,10  
0,05  
0,00  
Erec  
Erec  
Erec  
Erec  
Erec  
Erec  
0
25  
50  
75  
100  
125  
0
10  
20  
30  
40  
50  
60  
70  
ID(A)  
Rg(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VDS  
=
=
=
VDS  
VGS  
ID  
=
=
=
600  
V
V
Ω
125 °C  
150 °C  
600  
-4/15  
64  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
VGS  
-4/15  
21,33  
Rgon  
14 Oct. 2023 / Revision 2  
Copyright Vincotech  
9
10-FY126PA021ME-L227F68  
target datasheet  
Inverter Switching Characteristics  
figure 11.  
MOSFET  
figure 12.  
MOSFET  
Typical switching times as a function of drain current  
Typical switching times as a function of MOSFET turn on gate resistor  
t = f(ID)  
t = f(Rg)  
0
10  
0
10  
td(off)  
td(on)  
tr  
-1  
10  
td(off)  
tf  
-1  
10  
td(on)  
tr  
-2  
10  
tf  
-2  
10  
-3  
10  
0
25  
50  
75  
100  
125  
0
10  
20  
30  
40  
50  
60  
70  
ID(A)  
Rg(Ω)  
With an inductive load at  
With an inductive load at  
Tj =  
Tj =  
150  
600  
°C  
V
150  
600  
-4/15  
64  
°C  
VDS  
=
=
=
=
VDS  
=
=
=
V
V
A
VGS  
Rgon  
Rgoff  
VGS  
ID  
-4/15  
21,33  
21,33  
V
Ω
Ω
figure 13.  
MOSFET  
figure 14.  
MOSFET  
Typical reverse recovery time as a function of drain current  
Typical reverse recovery time as a function of MOSFET turn on gate resistor  
trr = f(ID)  
trr = f(Rgon)  
0,150  
0,125  
0,100  
0,075  
0,050  
0,025  
0,000  
0,200  
0,175  
0,150  
0,125  
0,100  
0,075  
0,050  
0,025  
0,000  
trr  
trr  
trr  
trr  
trr  
trr  
0
25  
50  
75  
100  
125  
0
10  
20  
30  
40  
50  
60  
70  
ID(A)  
Rgon(Ω)  
VDS  
=
=
=
VDS  
=
=
=
At  
600  
V
V
Ω
At  
600  
-4/15  
64  
V
V
A
25 °C  
125 °C  
150 °C  
25 °C  
125 °C  
150 °C  
VGS  
VGS  
ID  
-4/15  
21,33  
Tj:  
Tj:  
Rgon  
14 Oct. 2023 / Revision 2  
Copyright Vincotech  
10  
10-FY126PA021ME-L227F68  
target datasheet  
Inverter Switching Characteristics  
figure 15.  
MOSFET  
figure 16.  
MOSFET  
Typical recovered charge as a function of drain current  
Typical recovered charge as a function of MOSFET turn on gate resistor  
Qr = f(ID)  
Qr = f(Rgon)  
2,00  
1,75  
1,50  
1,25  
1,00  
0,75  
0,50  
0,25  
0,00  
1,50  
1,25  
1,00  
0,75  
0,50  
0,25  
0,00  
Qr  
Qr  
Qr  
Qr  
Qr  
Qr  
0
25  
50  
75  
100  
125  
0
10  
20  
30  
40  
50  
60  
70  
ID(A)  
Rgon(Ω)  
VDS  
VGS  
=
=
=
VDS  
VGS  
ID  
=
=
=
At  
600  
V
V
Ω
At  
600  
-4/15  
64  
V
V
A
25 °C  
125 °C  
150 °C  
25 °C  
125 °C  
150 °C  
-4/15  
21,33  
Tj:  
Tj:  
Rgon  
figure 17.  
MOSFET  
figure 18.  
MOSFET  
Typical peak reverse recovery current as a function of drain current  
Typical peak reverse recovery current as a function of MOSFET turn on gate resistor  
IRM = f(ID)  
IRM = f(Rgon)  
40  
35  
30  
25  
20  
15  
10  
5
60  
50  
40  
30  
20  
10  
0
IRM  
IRM  
IRM  
IRM  
IRM  
IRM  
0
0
25  
50  
75  
100  
125  
0
10  
20  
30  
40  
50  
60  
70  
ID(A)  
Rgon(Ω)  
VDS  
VGS  
=
=
=
VDS  
VGS  
ID  
=
=
=
At  
600  
V
V
Ω
At  
600  
-4/15  
64  
V
25 °C  
125 °C  
150 °C  
25 °C  
125 °C  
150 °C  
-4/15  
21,33  
V
A
Tj:  
Tj:  
Rgon  
14 Oct. 2023 / Revision 2  
Copyright Vincotech  
11  
10-FY126PA021ME-L227F68  
target datasheet  
Inverter Switching Characteristics  
figure 19.  
MOSFET  
figure 20.  
MOSFET  
Typical rate of fall of forward and reverse recovery current as a function of drain current  
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor  
diF/dt, dirr/dt = f(ID)  
diF/dt, dirr/dt = f(Rgon)  
4500  
7000  
6000  
5000  
4000  
3000  
2000  
1000  
0
diF/dt ‒ ‒ ‒ ‒ ‒  
diF/dt ‒ ‒ ‒ ‒ ‒  
dirr/dt ──────  
4000  
dirr/dt ──────  
3500  
3000  
2500  
2000  
1500  
1000  
500  
0
0
25  
50  
75  
100  
125  
ID(A)  
0
10  
20  
30  
40  
50  
60  
70  
Rgon(Ω)  
VDS  
=
=
=
VDS  
=
=
=
At  
600  
V
V
Ω
At  
600  
-4/15  
64  
V
V
A
25 °C  
125 °C  
150 °C  
25 °C  
125 °C  
150 °C  
VGS  
VGS  
ID  
-4/15  
21,33  
Tj:  
Tj:  
Rgon  
figure 21.  
MOSFET  
Reverse bias safe operating area  
ID = f(VDS  
)
250  
ID MAX  
200  
150  
100  
50  
0
0
250  
500  
750  
1000  
1250  
1500  
V
DS(V)  
Tj =  
At  
150  
°C  
Ω
Rgon  
Rgoff  
=
=
21,33  
21,33  
Ω
14 Oct. 2023 / Revision 2  
Copyright Vincotech  
12  
10-FY126PA021ME-L227F68  
target datasheet  
Inverter Switching Definitions  
figure 22.  
MOSFET  
figure 23.  
MOSFET  
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff  
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon  
)
tdoff  
IC  
IC  
VGE  
VGE  
VCE  
tEoff  
VCE  
tEon  
figure 24.  
MOSFET  
figure 25.  
MOSFET  
Turn-off Switching Waveforms & definition of tf  
Turn-on Switching Waveforms & definition of tr  
ID  
IC  
VCE  
tr  
VDS  
tf  
14 Oct. 2023 / Revision 2  
Copyright Vincotech  
13  
10-FY126PA021ME-L227F68  
target datasheet  
Inverter Switching Definitions  
figure 26.  
FWD  
figure 27.  
FWD  
Turn-off Switching Waveforms & definition of ttrr  
Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr)  
Qr  
IF  
IF  
fitted  
VF  
figure 28.  
FWD  
Turn-on Switching Waveforms & definition of tErec (tErec = integrating time for Erec  
)
%
E
rec  
tErec  
P
rec  
t (µs)  
14 Oct. 2023 / Revision 2  
Copyright Vincotech  
14  
10-FY126PA021ME-L227F68  
target datasheet  
Ordering Code  
Version  
Ordering Code  
Without thermal paste  
With thermal paste (5,2 W/mK, PTM6000HV)  
With thermal paste (3,4 W/mK, PSX-P7)  
10-FY126PA021ME-L227F68  
10-FY126PA021ME-L227F68-/7/  
10-FY126PA021ME-L227F68-/3/  
Marking  
Name  
Date code  
UL & VIN  
Lot  
Serial  
Text  
NN-NNNNNNNNNNNNNN-  
TTTTTTVV  
WWYY  
UL VIN  
LLLLL  
SSSS  
Type&Ver  
Lot number  
Serial  
Date code  
Datamatrix  
TTTTTTTVV  
LLLLL  
SSSS  
WWYY  
Outline  
Pin table [mm]  
Pin  
1
2
3
4
5
6
7
8
X
Y
2,7  
0
12  
13  
0
0
0
0
Function  
DC-3  
DC-3  
G15  
52,2  
52,2  
45,5  
42,5  
41,2  
38,5  
33,1  
30,4  
25  
S15  
DC+3  
DC+3  
DC+2  
DC+2  
G13  
9
10  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
26  
27  
28  
29  
30  
31  
32  
22  
11  
0
0
0
0
12  
13  
0
2,7  
15,6  
12,6  
28,2  
28,2  
26,7  
25,7  
28,2  
28,2  
25,2  
24,2  
28,2  
28,2  
26,7  
25,7  
S13  
19,4  
16,7  
13,7  
11  
8,7  
5,7  
0
0
14,3  
16,1  
0
2,7  
5,7  
8,7  
19,4  
22,1  
23,1  
26,1  
36,3  
39  
DC-2  
DC-2  
DC-1  
DC-1  
G11  
S11  
DC+1  
DC+1  
THERM2  
THERM1  
PH1  
PH1  
S12  
G12  
PH2  
PH2  
S14  
G14  
PH3  
PH3  
S16  
G16  
42  
45  
14 Oct. 2023 / Revision 2  
Copyright Vincotech  
15  
10-FY126PA021ME-L227F68  
target datasheet  
Pinout  
17,18  
DC+1  
7,8  
DC+2  
5,6  
DC+3  
T12  
T14  
T16  
G12  
24  
G14  
28  
G16  
32  
S12  
23  
S14  
27  
S16  
31  
PH1 21,22  
PH2 25,26  
PH3 29,30  
T11  
T13  
T15  
G11  
15  
G13  
9
G15  
3
NTC  
S11  
16  
S13  
10  
S15  
4
DC-1  
13,14  
DC-2  
11,12  
DC-3  
1,2  
THERM1  
20  
THERM2  
19  
Identification  
Component  
Voltage  
Current  
Function  
Comment  
ID  
T11, T12, T13, T14,  
T15, T16  
MOSFET  
1200 V  
21 mΩ  
Inverter Switch  
Thermistor  
Rt  
Thermistor  
14 Oct. 2023 / Revision 2  
Copyright Vincotech  
16  
10-FY126PA021ME-L227F68  
target datasheet  
Packaging instruction  
Handling instruction  
Standard packaging quantity (SPQ) 100  
>SPQ  
Standard  
<SPQ  
Sample  
Handling instructions for flow 1 packages see vincotech.com website.  
Package data  
Package data for flow 1 packages see vincotech.com website.  
Vincotech thermistor reference  
See Vincotech thermistor reference table at vincotech.com website.  
UL recognition and file number  
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.  
Document No.:  
Date:  
Modification:  
Pages  
10-FY126PA021ME-L227F68-T2-14  
14 Oct. 2023  
Product status definition  
Datasheet Status  
Product Status  
Definition  
This datasheet contains the design specifications for product development.  
Specifications may change in any manner without notice. The data  
contained is exclusively intended for technically trained staff.  
Target  
Formative or In Design  
DISCLAIMER  
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to  
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations  
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,  
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said  
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons  
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine  
the suitability of the information and the product for reader’s intended use.  
LIFE SUPPORT POLICY  
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval  
of Vincotech.  
As used herein:  
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or  
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be  
reasonably expected to result in significant injury to the user.  
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause  
the failure of the life support device or system, or to affect its safety or effectiveness.  
14 Oct. 2023 / Revision 2  
Copyright Vincotech  
6