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1N4001W THRU 1N4007W  
Surface Mount General Purpose Silicon Rectifiers  
Reverse Voltage - 50 to 1000 V  
PINNING  
PIN  
1
DESCRIPTION  
Cathode  
Forward Current - 1 A  
FEATURES  
2
Anode  
▪For surface mounted applications  
▪Low profile package  
▪Glass Passivated Chip Junction  
▪Ideal for automated placement  
▪Lead free in comply with EU RoHS 2011/65/EU directives  
1
2
Top View  
Marking Code： A1-A7  
Simplified outline SOD-123FL and symbol  
MECHANICAL DATA  
▪Case: SOD-123FL  
▪Terminals: Solderable per MIL-STD-750, Method 2026  
▪Approx. Weight: 15mg / 0.00053oz  
Maximum Ratings and Electrical characteristics  
Ratings at 25 °C ambient temperature unless otherwise specified.  
Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 %.  
Symbols  
VRRM  
1N4001W 1N4002W 1N4003W 1N4004W 1N4005W 1N4006W 1N4007W  
Parameter  
Maximum Repetitive Peak Reverse Voltage  
Maximum RMS voltage  
Units  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
V
VRMS  
Maximum DC Blocking Voltage  
VDC  
100  
1000  
Maximum Average Forward Rectified Current  
at Tc = 125 °C  
IF(AV)  
1
A
Peak Forward Surge Current 8.3 ms Single Half  
Sine Wave Superimposed on Rated Load  
IFSM  
30  
A
V
Maximum Instantaneous Forward Voltage at 1 A  
VF  
1.1  
Maximum DC Reverse Current  
at Rated DC Blocking Voltage  
Ta = 25 °C  
Ta =125 °C  
5
50  
μA  
IR  
Typical Junction Capacitance（1）  
Typical Thermal Resistance （2）  
Cj  
pF  
°C/W  
°C  
8(TYP.)  
90  
RθJA  
Operating and Storage Temperature Range  
Tj, Tstg  
-55 ~ +150  
（1）Measured at 1 MHz and applied reverse voltage of 4 V D.C  
（2）P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas.  
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 2016 Rev 1.0  
Page 1 of 3  
1N4001W THRU 1N4007W  
Fig.2 Typical Instaneous Reverse  
Characteristics  
Fig.1 Forward Current Derating Curve  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
100  
TJ=150°C  
TJ=125°C  
10  
1.0  
TJ=75°C  
0.1  
TJ=25°C  
Single phase half-wave 60 Hz  
resistive or inductive load  
1N4007W  
0.01  
25  
50  
75  
100  
125  
150  
175  
0
200  
400  
600  
800  
Case Temperature (°C)  
Instaneous Reverse Voltage (V)  
Fig.3 Typical Forward Characteristic  
Fig.4 Typical Junction Capacitance  
1.0  
0.5  
100  
10  
1
TJ=25°C  
0.2  
0.1  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
0.1  
1.0  
10  
100  
Reverse Voltage (V)  
Instaneous Forward Voltage (V)  
Fig.5 Maximum Non-Repetitive Peak  
Forward Surage Current  
35  
30  
25  
20  
15  
10  
05  
00  
8.3 ms Single Half Sine Wave  
(JEDEC Method)  
1
10  
100  
Number of Cycles  
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 2016 Rev 1.0  
Page 2 of 3  
1N4001W THRU 1N4007W  
PACKAGE OUTLINE  
Plastic surface mounted package; 2 leads  
SOD-123FL  
∠ALL ROUND  
∠ALL ROUND  
V M  
A
HE  
E
g
g
A
D
Top View  
Bottom View  
HE  
∠
g
UNIT  
mm  
A
C
D
E
e
max  
min  
max  
min  
1.1  
0.9  
43  
0.20  
0.12  
7.9  
2.9  
2.6  
1.9  
1.7  
75  
1.1  
0.8  
43  
31  
0.9  
0.7  
35  
3.8  
3.5  
7°  
114  
102  
150  
138  
mil  
35  
4.7  
67  
28  
The recommended mounting pad size  
Marking  
Type number  
Marking code  
1.2  
(47)  
1.2  
(47)  
2.0  
(79)  
1N4001W  
1N4002W  
1N4003W  
1N4004W  
1N4005W  
1N4006W  
1N4007W  
A1  
A2  
A3  
A4  
A5  
A6  
A7  
mm  
(mil)  
Unit：  
Page 3 of 3  
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 2016 Rev 1.0