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ASM33C through ASM36C  
2-Line Bi-directional TVS Diode Array  
Mechanical Characteristics  
Description  
Package: SOT-23  
The ASMXXC is a bi-directional TVS diode array, utilizing  
leading monolithic silicon technology to provide fast re-  
sponse time and low ESD clamping voltage, making this  
device an ideal solution for protecting sensitive semicon-  
ductor components from damage. The ASMXXC com-  
plies with the IEC 61000-4-2 (ESD) with ±30kV air and  
±30kV contact discharge. It is assembled into a lead-free  
SOT-23 package. It is designed to protect components  
which are connected to data and transmission lines from  
voltage surges.  
Lead Finish: Matte Tin  
Case Material: “Green” Molding Compound.  
Terminal Connections: See Diagram Below  
Marking Information: See Below  
Applications  
Cellular Handsets and Accessories  
Notebooks and Handhelds  
Portable Instrumentation  
Set Top Box  
Features  
Industrial Controls  
300W peak pulse power (8/20μs)  
Protects two bi-directional lines  
Ultra low leakage: nA level  
Server and Desktop PC  
Marking Information  
Operating voltage: 3.3V,5V, 12V, 15V, 24V, 32V,  
36V  
Low clamping voltage  
Complies with following standards:  
– IEC 61000-4-2 (ESD) immunity test  
Air discharge: ±30kV  
XXC = Device Marking  
3
Part Number  
ASM33C  
Marking  
33C  
Contact discharge: ±30kV  
RoHS Compliant  
XXC(M)  
ASM05C  
05C  
ASM12C  
12C  
ASM15C  
15C  
1
2
ASM24C  
24M  
ASM32C  
32C  
ASM36C  
36C  
Dimensions and Pin Configuration  
Ordering Information  
Part Number  
Packaging  
3000/Tape & Reel  
Reel Size  
ASMXXC  
7 inch  
Circuit and Pin Schematic  
Revision 1.1  
1 of 7  
www.appliedpowermicro.com  
ASM33C through ASM36C  
Absolute Maximum Ratings (TA=25°C unless otherwise specified)  
Parameter  
Symbol  
Value  
Unit  
Peak Pulse Power (8/20µs)  
Ppk  
300  
W
ESD per IEC 61000−4−2 (Air)  
±30  
±30  
VESD  
kV  
ESD per IEC 61000−4−2 (Contact)  
Operating Temperature Range  
Storage Temperature Range  
TJ  
−55 to +125  
−55 to +150  
°C  
°C  
Tstg  
Electrical Characteristics (TA=25°C unless otherwise specified)  
ASM33C  
Parameter  
Symbol Min  
Typ  
Max  
Unit Test Condition  
Reverse Working Voltage  
Breakdown Voltage  
VRWM  
3.3  
V
VBR  
IR  
3.8  
V
IT = 1mA  
Reverse Leakage Current  
Clamping Voltage  
1.0  
6
μA  
VRWM = 3.3V  
VC  
VC  
IPP  
CJ  
V
V
IPP = 1A (8 x 20µs pulse)  
IPP = 25A (8 x 20µs pulse)  
Clamping Voltage  
12  
25  
Peak Pulse Current  
Junction Capacitance  
A
tp = 8/20μs  
VR = 0V, f = 1MHz, Pin 1 to Pin 3  
or Pin 2 to Pin 3  
100  
pF  
ASM05C  
Parameter  
Symbol Min  
Typ  
Max  
Unit Test Condition  
Reverse Working Voltage  
Breakdown Voltage  
VRWM  
5
V
VBR  
IR  
6
V
IT = 1mA  
Reverse Leakage Current  
Clamping Voltage  
1.0  
8
μA  
VRWM = 5V  
VC  
VC  
IPP  
CJ  
V
V
IPP = 1A (8 x 20µs pulse)  
IPP = 20A (8 x 20µs pulse)  
Clamping Voltage  
15  
20  
80  
Peak Pulse Current  
Junction Capacitance  
A
tp = 8/20μs  
VR = 0V, f = 1MHz, Pin 1 to Pin 3  
or Pin 2 to Pin 3  
pF  
Revision 1.1  
2 of 7  
www.appliedpowermicro.com  
ASM33C through ASM36C  
ASM12C  
Parameter  
Symbol Min  
Typ  
Max  
Unit Test Condition  
Reverse Working Voltage  
Breakdown Voltage  
Reverse Leakage Current  
Clamping Voltage  
VRWM  
12  
V
VBR  
IR  
13.3  
V
μA  
V
IT = 1mA  
0.5  
18  
25  
12  
VRWM = 12V  
VC  
VC  
IPP  
IPP = 1A (8 x 20µs pulse)  
IPP = 12A (8 x 20µs pulse)  
Clamping Voltage  
V
Peak Pulse Current  
A
tp = 8/20μs  
VR = 0V, f = 1MHz, Pin 1 to Pin 3  
or Pin 2 to Pin 3  
Junction Capacitance  
CJ  
50  
pF  
ASM15C  
Parameter  
Symbol Min  
Typ  
Max  
Unit Test Condition  
Reverse Working Voltage  
Breakdown Voltage  
Reverse Leakage Current  
Clamping Voltage  
VRWM  
15  
V
VBR  
IR  
16.7  
V
μA  
V
IT = 1mA  
0.5  
20  
VRWM = 15V  
VC  
VC  
IPP  
IPP = 1A (8 x 20µs pulse)  
IPP = 8A (8 x 20µs pulse)  
Clamping Voltage  
37.5  
8
V
Peak Pulse Current  
A
tp = 8/20μs  
VR = 0V, f = 1MHz, Pin 1 to Pin 3  
or Pin 2 to Pin 3  
Junction Capacitance  
CJ  
40  
pF  
Revision 1.1  
3 of 7  
www.appliedpowermicro.com  
ASM33C through ASM36C  
ASM24C  
Parameter  
Symbol Min  
Typ  
Max  
Unit Test Condition  
Reverse Working Voltage  
VRWM  
24  
V
Breakdown Voltage  
Reverse Leakage Current  
Clamping Voltage  
VBR  
IR  
27  
V
μA  
V
IT = 1mA  
0.2  
40  
60  
5
VRWM = 24V  
VC  
VC  
IPP  
IPP = 1A (8 x 20µs pulse)  
IPP = 5A (8 x 20µs pulse)  
Clamping Voltage  
V
Peak Pulse Current  
A
tp = 8/20μs  
VR = 0V, f = 1MHz, Pin 1 to Pin 3  
or Pin 2 to Pin 3  
Junction Capacitance  
CJ  
15  
30  
pF  
ASM32C  
Parameter  
Symbol Min  
Typ  
Max  
Unit Test Condition  
Reverse Working Voltage  
Breakdown Voltage  
VRWM  
32  
V
VBR  
IR  
35.6  
V
μA  
V
IT = 1mA  
Reverse Leakage Current  
Clamping Voltage  
0.2  
45  
67  
4
VRWM = 32V  
VC  
IPP = 1A (8 x 20µs pulse)  
Clamping Voltage  
Peak Pulse Current  
VC  
IPP  
V
A
IPP = 4.5A (8 x 20µs pulse)  
tp = 8/20μs  
VR = 0V, f = 1MHz, Pin 1 to Pin 3  
or Pin 2 to Pin 3  
Junction Capacitance  
CJ  
15  
25  
pF  
ASM36C  
Parameter  
Symbol Min  
Typ  
Max  
Unit Test Condition  
Reverse Working Voltage  
Breakdown Voltage  
VRWM  
36  
V
VBR  
IR  
38  
V
μA  
V
IT = 1mA  
Reverse Leakage Current  
Clamping Voltage  
0.2  
50  
75  
4
VRWM = 36V  
VC  
VC  
IPP  
IPP = 1A (8 x 20µs pulse)  
IPP = 4A (8 x 20µs pulse)  
Clamping Voltage  
V
A
Peak Pulse Current  
Junction Capacitance  
tp = 8/20μs  
VR = 0V, f = 1MHz, Pin 1 to Pin 3  
or Pin 2 to Pin 3  
CJ  
12  
20  
pF  
Revision 1.1  
4 of 7  
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ASM33C through ASM36C  
Typical Performance Characteristics (TA=25°C unless otherwise Specified)  
Power Derating Curve  
Peak Pulse Power vs. Pulse Time  
8 X 20μs Pulse Waveform  
Revision 1.1  
5 of 7  
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ASM33C through ASM36C  
SOT-23 Package Outline Drawing  
DIMENSIONS  
MILLIMETERS  
INCHES  
SYM  
MIN  
0.90  
NOM  
MAX  
MIN  
NOM  
MAX  
A
A1  
A2  
b
- -  
1.15  
0.10  
1.05  
0.50  
0.15  
3.00  
1.40  
0.035  
- -  
0.045  
0.00  
0.90  
0.30  
0.08  
2.80  
1.20  
- -  
- -  
- -  
- -  
- -  
- -  
0.000  
0.035  
0.012  
0.003  
0.110  
0.047  
- -  
- -  
- -  
- -  
- -  
- -  
0.004  
0.041  
0.020  
0.006  
0.118  
0.055  
c
D
E
E1  
e
2.25  
- -  
2.55  
0.089  
0.100  
0.95TYP  
0.037TYP  
e1  
L
1.80  
- -  
0.55REF  
- -  
2.00  
0.071  
- -  
0.022REF  
- -  
0.079  
L1  
Θ
0.30  
0.50  
0.012  
0.020  
- -  
- -  
0°  
8°  
0°  
8°  
Revision 1.1  
6 of 7  
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ASM33C through ASM36C  
Suggested Land Pattern  
DIMENSIONS  
SYM  
INCHES  
MILLIMETERS  
C
E
.087  
.037  
.075  
.031  
.039  
.055  
.141  
2.20  
0.95  
1.90  
0.80  
1.00  
1.40  
3.60  
E1  
G
X
Y
Z
Contact Information  
Applied Power Microelectronics Inc.  
Website: http://www.appliedpowermicro.com  
Email: sales@appliedpowermicro.com  
Phone: +86 (0519) 8399 3606  
Applied Power Microelectronics Inc. (APM) reserves the right to make changes to the product specification and data in this document without notice. APM makes no warranty, representation or  
guarantee regarding the suitability of its products for any particular purpose, nor does APM assume any liability arising from the application or use of any products or circuits, and specifically dis-  
claims any and all liability, including without limitation special, consequential or incidental damages.  
Revision 1.1  
7 of 7  
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