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10-EY126PB021ME-PJ17F18T  
datasheet  
flowPACK E2 SiC  
1200 V / 21 mΩ  
Topology features  
flow E2 12 mm housing  
● 3ph Inverter  
● Low and high side Kelvin Emitter for improved switching  
performance  
● MOSFET  
● Open Emitter configuration  
● Temperature sensor  
Component features  
● High Blocking Voltage with low drain source on state resistance  
● High speed SiC-MOSFET technology  
● Resistant to Latch-up  
Housing features  
● Base isolation: Al2O3  
● Convex shaped substrate for superior thermal contact  
● Compact housing  
● CTI600 housing material  
Schematic  
● Thermo-mechanical push-and-pull force relief  
● Press-fit pin  
● Reliable cold welding connection  
Target applications  
● Charging Stations  
● Elevator Drives  
● Embedded Drives  
● Industrial Drives  
● Servo Drives  
Types  
● 10-EY126PB021ME-PJ17F18T  
Copyright Vincotech  
1
23 Nov. 2023 / Revision 1  
10-EY126PB021ME-PJ17F18T  
datasheet  
Maximum Ratings  
Tj = 25 °C, unless otherwise specified  
Parameter  
Symbol  
Conditions  
Value  
Unit  
Inverter Switch  
VDSS  
Drain-source voltage  
1200  
54  
V
A
ID  
Drain current (DC current)  
Peak drain current  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
IDM  
tp limited by Tjmax  
Tj = Tjmax  
200  
A
Ptot  
Total power dissipation  
89  
W
-4 / 15  
-8 / 19  
175  
VGSS  
Gate-source voltage  
V
dynamic  
Tjmax  
Maximum Junction Temperature  
°C  
Module Properties  
Thermal Properties  
Tstg  
Tjop  
Storage temperature  
-40…+125  
°C  
°C  
Operation temperature under switching  
condition  
-40…+(Tjmax - 25)  
Isolation Properties  
Isolation voltage  
Isolation voltage  
Creepage distance  
Clearance  
Visol  
Visol  
DC Test Voltage*  
AC Voltage  
tp = 2 s  
6000  
2500  
>12,7  
9,11  
V
tp = 1 min  
V
mm  
mm  
Comparative Tracking Index  
*100 % tested in production  
CTI  
≥ 600  
Copyright Vincotech  
2
23 Nov. 2023 / Revision 1  
10-EY126PB021ME-PJ17F18T  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VF [V] IF [A]  
VGE [V]  
VGS [V]  
Min  
Max  
Inverter Switch  
Static  
25  
14,5  
1,8  
20,8  
26,7  
29,6  
27(1)  
rDS(on)  
Drain-source on-state resistance  
15  
61  
125  
150  
mΩ  
VGS(th)  
IGSS  
IDSS  
rg  
Gate-source threshold voltage  
Gate to Source Leakage Current  
Zero Gate Voltage Drain Current  
Internal gate resistance  
VDS = VGS  
0,0168  
25  
25  
25  
2,5  
10  
3,6  
100  
25  
V
15  
0
0
nA  
µA  
Ω
1200  
1
3,3  
162  
4818  
180  
12  
Qg  
Gate charge  
-4/15  
800  
61  
0
25  
25  
25  
nC  
Ciss  
Coss  
Crss  
VSD  
Short-circuit input capacitance  
Short-circuit output capacitance  
Reverse transfer capacitance  
Diode forward voltage  
f = 100 kHz  
0
0
1000  
pF  
V
30,5  
4,6  
Thermal  
λpaste = 3,4 W/mK  
(PSX)  
Thermal resistance junction to sink(2)  
1,06  
K/W  
Rth(j-s)  
Copyright Vincotech  
3
23 Nov. 2023 / Revision 1  
10-EY126PB021ME-PJ17F18T  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VGE [V]  
VGS [V]  
Min  
Max  
VF [V]  
IF [A]  
Dynamic  
25  
28,56  
26,84  
26,68  
18,64  
16,26  
15,63  
81,52  
90,1  
td(on)  
Turn-on delay time  
125  
150  
25  
ns  
ns  
tr  
td(off)  
tf  
Rise time  
125  
150  
25  
Rgon = 4 Ω  
Rgoff = 4 Ω  
Turn-off delay time  
125  
150  
25  
ns  
92,25  
13,93  
13,98  
13,6  
Fall time  
125  
150  
25  
ns  
QrFWD=0,338 µC  
QrFWD=0,632 µC  
QrFWD=0,77 µC  
1,28  
Eon  
Turn-on energy (per pulse)  
Turn-off energy (per pulse)  
Peak recovery current  
Reverse recovery time  
Recovered charge  
125  
150  
25  
1,37  
mWs  
mWs  
A
1,47  
0,353  
0,376  
0,384  
27,69  
33,07  
36,16  
21,27  
36,81  
39,66  
0,338  
0,632  
0,77  
Eoff  
-4/15  
600  
60  
125  
150  
25  
IRRM  
125  
150  
25  
trr  
125  
150  
25  
ns  
di/dt=2467 A/µs  
di/dt=2231 A/µs  
di/dt=1937 A/µs  
Qr  
125  
150  
25  
μC  
0,037  
0,117  
0,144  
3660,77  
1688,27  
1736,27  
Erec  
Reverse recovered energy  
Peak rate of fall of recovery current  
125  
150  
25  
mWs  
A/µs  
(dirf/dt)max  
125  
150  
Copyright Vincotech  
4
23 Nov. 2023 / Revision 1  
10-EY126PB021ME-PJ17F18T  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VF [V] IF [A]  
VGE [V]  
VGS [V]  
Min  
Max  
Thermistor  
Static  
R
ΔR/R  
P
Rated resistance  
25  
5
kΩ  
%
Deviation of R100  
Power dissipation  
Power dissipation constant  
B-value  
R100 = 499 Ω  
100  
25  
3,2  
3,3  
130  
1,3  
mW  
mW/K  
K
d
25  
B(25/50)  
Tol. ±1 %  
3380  
Vincotech Thermistor Reference  
V
(1)  
Value at chip level  
(2)  
Only valid with pre-applied Vincotech thermal interface material.  
Copyright Vincotech  
5
23 Nov. 2023 / Revision 1  
10-EY126PB021ME-PJ17F18T  
datasheet  
Inverter Switch Characteristics  
figure 1.  
MOSFET  
figure 2.  
MOSFET  
Typical output characteristics  
Typical output characteristics  
ID = f(VDS  
)
ID = f(VDS)  
200  
200  
VGS  
:
-4 V  
-2 V  
0 V  
150  
100  
50  
1 V  
150  
100  
50  
3 V  
5 V  
7 V  
9 V  
11 V  
13 V  
15 V  
17 V  
19 V  
0
-50  
-100  
-150  
-200  
0
0
2
4
6
8
10  
-12,5 -10,0 -7,5 -5,0 -2,5 0,0  
2,5  
5,0  
7,5 10,0 12,5  
V
DS(V)  
VDS(V)  
tp  
=
=
tp  
=
250  
15  
μs  
V
250  
150  
μs  
°C  
25 °C  
VGS  
Tj =  
125 °C  
150 °C  
Tj:  
VGS from -4 V to 19 V in steps of 2 V  
figure 3.  
MOSFET  
figure 4.  
MOSFET  
Typical transfer characteristics  
Typical reverse drain current characteristics  
ID = f(VGS  
)
ISD = f(VSD)  
120  
200  
100  
80  
60  
40  
20  
0
150  
100  
50  
0
0
0
2
4
6
8
10  
1
2
3
4
5
6
7
V
GS(V)  
VSD(V)  
tp  
=
=
tp  
=
=
250  
10  
μs  
V
250  
15  
μs  
25 °C  
25 °C  
VDS  
VGS  
125 °C  
150 °C  
V
125 °C  
150 °C  
Tj:  
Tj:  
Copyright Vincotech  
6
23 Nov. 2023 / Revision 1  
10-EY126PB021ME-PJ17F18T  
datasheet  
Inverter Switch Characteristics  
figure 6.  
MOSFET  
figure 5.  
MOSFET  
Safe operating area  
Transient thermal impedance as a function of pulse width  
ID = f(VDS  
)
Zth(j-s) = f(tp)  
1
10  
1000  
100  
10  
0
10  
-1  
10  
1
0,5  
0,2  
-2  
10  
0,1  
0,05  
0,02  
0,01  
0,005  
0
0,1  
0,01  
-3  
10  
-5  
-4  
10  
-3  
10  
-2  
10  
-1  
10  
0
1
2
1
10  
100  
1000  
10000  
10  
10  
10  
10  
V
DS(V)  
tp(s)  
D =  
D =  
single pulse  
tp / T  
1,062  
Ts =  
Rth(j-s)  
=
80  
15  
°C  
V
K/W  
VGS  
=
MOSFET thermal model values  
R (K/W)  
Tj =  
Tjmax  
τ (s)  
4,56E-02  
1,17E-01  
6,94E-01  
1,46E-01  
5,96E-02  
5,57E+00  
7,95E-01  
7,90E-02  
8,08E-03  
6,53E-04  
figure 7.  
MOSFET  
Gate voltage vs gate charge  
VGS = f(Qg)  
17,5  
15,0  
12,5  
10,0  
7,5  
5,0  
2,5  
0,0  
-2,5  
-5,0  
0
25  
50  
75  
100  
125  
150  
175  
Qg(nC)  
ID  
=
61  
25  
A
Tj =  
°C  
Copyright Vincotech  
7
23 Nov. 2023 / Revision 1  
10-EY126PB021ME-PJ17F18T  
datasheet  
Thermistor Characteristics  
figure 8.  
Thermistor  
Typical NTC characteristic as function of temperature  
RT = f(T)  
6000  
5000  
4000  
3000  
2000  
1000  
0
20  
40  
60  
80  
100  
120  
140  
T(°C)  
Copyright Vincotech  
8
23 Nov. 2023 / Revision 1  
10-EY126PB021ME-PJ17F18T  
datasheet  
Inverter Switching Characteristics  
figure 9.  
MOSFET  
figure 10.  
MOSFET  
Typical switching energy losses as a function of drain current  
Typical switching energy losses as a function of MOSFET turn on gate resistor  
E = f(ID)  
E = f(Rg)  
3,5  
3,0  
2,5  
2,0  
1,5  
1,0  
0,5  
0,0  
2,5  
2,0  
1,5  
1,0  
0,5  
0,0  
Eon  
Eon  
Eon  
Eon  
Eon  
Eon  
Eoff  
Eoff  
Eoff  
Eoff  
Eoff  
Eoff  
0
25  
50  
75  
100  
125  
ID(A)  
0,0  
2,5  
5,0  
7,5  
10,0  
12,5  
15,0  
17,5  
Rg(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VDS  
VGS  
=
=
=
=
VDS  
VGS  
ID  
=
=
=
600  
-4/15  
4
V
V
Ω
Ω
125 °C  
150 °C  
600  
-4/15  
60  
V
125 °C  
150 °C  
Tj:  
Tj:  
V
A
Rgon  
Rgoff  
4
figure 11.  
MOSFET  
figure 12.  
MOSFET  
Typical reverse recovered energy loss as a function of drain current  
Typical reverse recovered energy loss as a function of MOSFET turn on gate resistor  
Erec = f(ID)  
Erec = f(Rg)  
0,225  
0,200  
0,175  
0,150  
0,125  
0,100  
0,075  
0,050  
0,025  
0,000  
0,200  
0,175  
0,150  
0,125  
0,100  
0,075  
0,050  
0,025  
0,000  
Erec  
Erec  
Erec  
Erec  
Erec  
Erec  
0
25  
50  
75  
100  
125  
ID(A)  
0,0  
2,5  
5,0  
7,5  
10,0  
12,5  
15,0  
17,5  
Rg(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VDS  
VGS  
=
=
=
VDS  
VGS  
ID  
=
=
=
600  
-4/15  
4
V
V
Ω
125 °C  
150 °C  
600  
-4/15  
60  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
Rgon  
Copyright Vincotech  
9
23 Nov. 2023 / Revision 1  
10-EY126PB021ME-PJ17F18T  
datasheet  
Inverter Switching Characteristics  
figure 13.  
MOSFET  
figure 14.  
MOSFET  
Typical switching times as a function of drain current  
Typical switching times as a function of MOSFET turn on gate resistor  
t = f(ID)  
t = f(Rg)  
0
10  
0
10  
td(off)  
-1  
10  
-1  
10  
td(off)  
td(on)  
tr  
td(on)  
tr  
tf  
tf  
-2  
10  
-2  
10  
-3  
10  
-3  
10  
0
25  
50  
75  
100  
125  
ID(A)  
0,0  
2,5  
5,0  
7,5  
10,0  
12,5  
15,0  
17,5  
Rg(Ω)  
With an inductive load at  
With an inductive load at  
Tj =  
Tj =  
150  
600  
-4/15  
4
°C  
V
150  
600  
-4/15  
60  
°C  
VDS  
=
=
=
=
VDS  
=
=
=
V
V
A
VGS  
Rgon  
Rgoff  
VGS  
ID  
V
Ω
Ω
4
figure 15.  
MOSFET  
figure 16.  
MOSFET  
Typical reverse recovery time as a function of drain current  
Typical reverse recovery time as a function of MOSFET turn on gate resistor  
trr = f(ID)  
trr = f(Rgon)  
0,06  
0,05  
0,04  
0,03  
0,02  
0,01  
0,00  
0,07  
0,06  
0,05  
0,04  
0,03  
0,02  
0,01  
0,00  
trr  
trr  
trr  
trr  
trr  
trr  
0
25  
50  
75  
100  
125  
ID(A)  
0,0  
2,5  
5,0  
7,5  
10,0  
12,5  
15,0  
17,5  
R
gon(Ω)  
VDS  
VGS  
=
=
=
VDS  
VGS  
ID  
=
=
=
At  
600  
-4/15  
4
V
V
Ω
At  
600  
-4/15  
60  
V
25 °C  
25 °C  
125 °C  
150 °C  
V
A
125 °C  
150 °C  
Tj:  
Tj:  
Rgon  
Copyright Vincotech  
10  
23 Nov. 2023 / Revision 1  
10-EY126PB021ME-PJ17F18T  
datasheet  
Inverter Switching Characteristics  
figure 17.  
MOSFET  
figure 18.  
MOSFET  
Typical recovered charge as a function of drain current  
Typical recovered charge as a function of MOSFET turn on gate resistor  
Qr = f(ID)  
Qr = f(Rgon)  
1,2  
1,0  
0,8  
0,6  
0,4  
0,2  
0,0  
1,2  
1,0  
0,8  
0,6  
0,4  
0,2  
0,0  
Qr  
Qr  
Qr  
Qr  
Qr  
Qr  
0
25  
50  
75  
100  
125  
ID(A)  
0,0  
2,5  
5,0  
7,5  
10,0  
12,5  
15,0  
17,5  
R
gon(Ω)  
VDS  
VGS  
=
=
=
VDS  
VGS  
ID  
=
=
=
At  
600  
V
V
Ω
At  
600  
-4/15  
60  
V
25 °C  
25 °C  
-4/15  
4
125 °C  
150 °C  
V
A
125 °C  
150 °C  
Tj:  
Tj:  
Rgon  
figure 19.  
MOSFET  
figure 20.  
MOSFET  
Typical peak reverse recovery current as a function of drain current  
Typical peak reverse recovery current as a function of MOSFET turn on gate resistor  
IRM = f(ID)  
IRM = f(Rgon)  
50  
40  
30  
20  
10  
0
50  
40  
30  
20  
10  
0
IRM  
IRM  
IRM  
IRM  
IRM  
IRM  
0
25  
50  
75  
100  
125  
ID(A)  
0,0  
2,5  
5,0  
7,5  
10,0  
12,5  
15,0  
17,5  
R
gon(Ω)  
VDS  
VGS  
=
=
=
VDS  
VGS  
ID  
=
=
=
At  
600  
V
V
Ω
At  
600  
-4/15  
60  
V
25 °C  
25 °C  
-4/15  
4
125 °C  
150 °C  
V
A
125 °C  
150 °C  
Tj:  
Tj:  
Rgon  
Copyright Vincotech  
11  
23 Nov. 2023 / Revision 1  
10-EY126PB021ME-PJ17F18T  
datasheet  
Inverter Switching Characteristics  
figure 21.  
MOSFET  
figure 22.  
MOSFET  
Typical rate of fall of forward and reverse recovery current as a function of drain current  
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor  
diF/dt, dirr/dt = f(ID)  
diF/dt, dirr/dt = f(Rgon)  
4500  
10000  
8000  
6000  
4000  
2000  
0
diF/dt ‒ ‒ ‒ ‒ ‒  
diF/dt ‒ ‒ ‒ ‒ ‒  
dirr/dt ──────  
4000  
dirr/dt ──────  
3500  
3000  
2500  
2000  
1500  
1000  
500  
0
0
25  
50  
75  
100  
125  
ID(A)  
0,0  
2,5  
5,0  
7,5  
10,0  
12,5  
15,0  
17,5  
R
gon(Ω)  
VDS  
=
=
=
VDS  
VGS  
ID  
=
=
=
At  
600  
-4/15  
4
V
V
Ω
At  
600  
V
V
A
25 °C  
25 °C  
VGS  
125 °C  
150 °C  
-4/15  
60  
125 °C  
150 °C  
Tj:  
Tj:  
Rgon  
figure 23.  
MOSFET  
Reverse bias safe operating area  
ID = f(VDS  
)
150  
ID MAX  
125  
100  
75  
50  
25  
0
0
250  
500  
750  
1000  
1250  
1500  
V
DS(V)  
Tj =  
At  
150  
°C  
Ω
Rgon  
Rgoff  
=
=
4
4
Ω
Copyright Vincotech  
12  
23 Nov. 2023 / Revision 1  
10-EY126PB021ME-PJ17F18T  
datasheet  
Inverter Switching Definitions  
figure 24.  
MOSFET  
figure 25.  
MOSFET  
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff  
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon  
)
tdoff  
IC  
IC  
VGE  
VGE  
VCE  
tEoff  
VCE  
tEon  
figure 26.  
MOSFET  
figure 27.  
MOSFET  
Turn-off Switching Waveforms & definition of tf  
Turn-on Switching Waveforms & definition of tr  
ID  
IC  
VCE  
tr  
VDS  
tf  
Copyright Vincotech  
13  
23 Nov. 2023 / Revision 1  
10-EY126PB021ME-PJ17F18T  
datasheet  
Inverter Switching Definitions  
figure 28.  
FWD  
figure 29.  
FWD  
Turn-off Switching Waveforms & definition of ttrr  
Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr)  
Qr  
IF  
IF  
fitted  
VF  
figure 30.  
FWD  
Turn-on Switching Waveforms & definition of tErec (tErec = integrating time for Erec  
)
%
E
rec  
tErec  
P
rec  
t (µs)  
Copyright Vincotech  
14  
23 Nov. 2023 / Revision 1  
10-EY126PB021ME-PJ17F18T  
datasheet  
Ordering Code  
Version  
Ordering Code  
Without thermal paste  
10-EY126PB021ME-PJ17F18T  
10-EY126PB021ME-PJ17F18T-/7/  
10-EY126PB021ME-PJ17F18T-/3/  
With thermal paste (5,2 W/mK, PTM6000HV)  
With thermal paste (3,4 W/mK, PSX-P7)  
Marking  
Name  
Date code  
UL & VIN  
Lot  
Serial  
Text  
NN-NNNNNNNNNNNNNN-  
TTTTTTVV  
WWYY  
UL VIN  
LLLLL  
SSSS  
Type&Ver  
Lot number  
Serial  
Date code  
Datamatrix  
TTTTTTTVV  
LLLLL  
SSSS  
WWYY  
Outline  
Pin table [mm]  
Pin  
1
X
Y
Function  
G12  
6,4  
3,2  
0
0
2
0
S12  
3
0
Ph1  
4
0
3,2  
6,4  
9,6  
19,2  
19,2  
19,2  
22,4  
25,6  
28,8  
38,4  
38,4  
41,6  
44,8  
48  
Ph1  
5
0
Ph1  
6
0
Ph1  
7
6,4  
3,2  
0
G14  
8
S14  
9
Ph2  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
26  
27  
28  
29  
30  
31  
32  
33  
34  
35  
36  
37  
38  
39  
40  
41  
42  
43  
44  
0
Ph2  
0
Ph2  
0
Ph2  
3,2  
0
Ph3  
Ph3  
0
Ph3  
0
Ph3  
0
S16  
3,2  
12,8  
22,4  
25,6  
28,8  
32  
48  
G16  
48  
Therm2  
Therm1  
G15  
48  
48  
48  
S15  
48  
DC-3  
DC-3  
DC-3  
DC-2  
DC-2  
DC-2  
S13  
32  
44,8  
41,6  
25,6  
22,4  
19,2  
16  
32  
32  
32  
32  
32  
28,8  
22,4  
19,2  
16  
19,2  
12,8  
12,8  
12,8  
16  
G13  
DC+  
DC+  
DC+  
DC+  
DC+  
DC+  
DC+  
DC+  
DC+  
DC-1  
DC-1  
DC-1  
S11  
19,2  
22,4  
25,6  
22,4  
22,4  
25,6  
32  
16  
32  
32  
35,2  
35,2  
6,4  
3,2  
0
32  
32  
28,8  
25,6  
0
0
G11  
Copyright Vincotech  
15  
23 Nov. 2023 / Revision 1  
10-EY126PB021ME-PJ17F18T  
datasheet  
Pinout  
DC+  
31,32,33,34,35,36,37,38,39  
T12  
T14  
T16  
G12  
S12  
G14  
S14  
G16  
1
2
7
8
18  
17  
S16  
Ph1  
3,4,5,6  
Ph2  
9,10,11,12  
Ph3  
13,14,15,16  
T15  
T11  
T13  
G11  
S11  
G13  
S13  
G15  
S15  
44  
43  
30  
29  
21  
22  
Rt  
Therm1  
20  
Therm2  
19  
DC-1  
40,41,42  
DC-2  
26,27,28  
DC-3  
23,24,25  
Identification  
Component  
Voltage  
Current  
Function  
Comment  
ID  
T11, T12, T13, T14,  
MOSFET  
1200 V  
21 mΩ  
Inverter Switch  
Thermistor  
T15, T16  
Rt  
Thermistor  
Copyright Vincotech  
16  
23 Nov. 2023 / Revision 1  
10-EY126PB021ME-PJ17F18T  
datasheet  
Packaging instruction  
Handling instruction  
Standard packaging quantity (SPQ) 100  
>SPQ  
Standard  
<SPQ  
Sample  
Handling instructions for flow E2 packages see vincotech.com website.  
Package data  
Package data for flow E2 packages see vincotech.com website.  
Vincotech thermistor reference  
See Vincotech thermistor reference table at vincotech.com website.  
UL recognition and file number  
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.  
Document No.:  
Date:  
Modification:  
Pages  
10-EY126PB021ME-PJ17F18T-D1-14  
23 Nov. 2023  
DISCLAIMER  
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to  
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations  
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,  
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said  
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons  
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine  
the suitability of the information and the product for reader’s intended use.  
LIFE SUPPORT POLICY  
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval  
of Vincotech.  
As used herein:  
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or  
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be  
reasonably expected to result in significant injury to the user.  
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause  
the failure of the life support device or system, or to affect its safety or effectiveness.  
Copyright Vincotech  
17  
23 Nov. 2023 / Revision 1