SMD Type
Thyristor
SCR Thyristor
03P2J/03P4J/03P5J
1.70 0.1
■ Features
● High Anode to Cathode Voltage
V
V
V
DRM,VRRM=200V(03P2J)
DRM,VRRM=400V(03P4J)
DRM,VRRM=500V(03P5J)
0.42 0.1
0.46 0.1
1.Gate
2.Anode
3.Cathode
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
03P2J
03P4J
03P5J
500
Unit
Repetitive Peak Reverse Voltages @ IRRM=100uA
Repetitive Peak Off-State Voltages @ IDRM=100uA
Average on-state Current (Ta = 77℃Single phase half wave)
Forward Current RMS
V
V
RRM
DRM
200
200
400
400
0.3
500
I
T(AV)
0.47
6
A
I
T(RMS)
Non-Repetitive Peak on-state Current (f=50Hz,1cycle)
Circuit Fusing Considerations (1ms≤ t ≤10ms)
Peak Gate Current ─ Forward (f≥50Hz,duty≤10℅)
Peak Gate Voltage ─ Reverse
I
TSM
I2t
A2s
A
0.15
0.1
I
GFM
GRM
GM
GF(AV)
th(j-a)
6
V
V
100
10
P
Peak Gate Power ─ Forward (f≥50Hz,duty≤10℅)
mW
℃/W
℃
P
Average Gate Power ─ Forward
65
R
Thermal Resistance Junction to Ambient
125
-55 to 150
T
J
Junction Temperature
Storage Temperature Range
Tstg
■ Electrical Characteristics (Ta = 25℃, unless otherwise noted.)
Parameter
Symbol
Test Conditions
DM=1/2VDRM,T = 125℃
Min Typ. Max Unit
Gate Non-Trigger Voltage
V
GD
0.1
V
V
V
V
J
10
100
1.6
0.8
200
5
DRM=VRRM,
DRM=VRRM,
R
GK=1KΩ,
Tj=25℃;
Off-state Leakage Current
I
D,I
R
uA
T
j=125℃;
On-state Voltage
V
TM
GT
I
T
=1A
V
Gate Trigger Voltage
Gate Trigger Current (Continuous dc)
Holding Current
V
V
V
V
DM=6V, R
L
L
=100Ω
=100Ω
I
GT
DM=6V, R
μA
I
H
D=12V, I
T
=1A
mA
Critical Rate of rise of off-state Voltage
dV/dt
tq
40
25
V/us
uS
V
DM=2/3VDRM, Tj=125 ℃
V
D=2/3VDRM,
T
j=125℃,T
M
=200mA;
Circuit Commutated turn-off time
Marking
V
R
≥25VdITM/d
t
=15A/us,dVD/dt
=20V/us;
■
NO
03P2J
03P2J
03P4J
03P4J
03P5J
03P5J
Marking
1
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