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1N5221B(UR)-1N5281B(UR)  
SILICON ZENER DIODES  
High-reliability discrete products  
and engineering services since 1977  
FEATURES  
•
•
•
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. Available in surface mount by adding suffix “UR”  
Devices with guaranteed limits on all six parameters are indicated by suffix A for ±10% tolerance, suffix B for a ±5% tolerance, suffix C for a 2% tolerance and suffix D for a 1%  
tolerance.  
MAXIMUM RATINGS  
Operating and Storage Temperature  
DC Power Dissipation  
-65°C to + 200°C  
500 mW  
Power Derating  
Forward Voltage @ 200mA  
3.33 mW/C° above 25°C  
1.1 Volts  
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)  
Max Reverse Leakage Current  
A, B, & D Suffix  
Max Zener Impedance  
A&B Suffix Only(2)  
Test  
Current  
IZT  
Max Zener Voltage  
Temp. Coeff.  
(A&B Suffix Only)  
Non Suffix  
Nominal  
Zener Voltage  
VZ @ IZT  
Only  
IR  
µA  
VR  
Volts  
Part Number (1)  
mA  
IR @ VR Used For  
Suffix A  
@
ZZT @ IZT  
ZZT @ IZK=0.25mA  
Ohms  
Volts  
αVZ (%/°C)(3)  
Ohms  
µA  
A
B,C &D  
1N5221B  
1N5222B  
1N5223B  
1N5224B  
1N5225B  
2.4  
2.5  
2.7  
2.8  
3.0  
20  
20  
20  
20  
20  
30  
30  
30  
30  
29  
1200  
1250  
1300  
1400  
1600  
100  
100  
75  
75  
50  
0.95  
1.0  
1.0  
1.0  
1.0  
1.0  
200  
200  
150  
150  
100  
-0.085  
-0.085  
-0.080  
-0.080  
-0.075  
0.95  
0.95  
0.95  
0.95  
1N5226B  
1N5227B  
1N5228B  
1N5229B  
1N5230B  
3.3  
3.6  
3.9  
4.3  
4.7  
20  
20  
20  
20  
20  
28  
24  
23  
22  
19  
1600  
1700  
1900  
2000  
1900  
25  
15  
10  
5.0  
5.0  
0.95  
0.95  
0.95  
0.95  
1.9  
1.0  
1.0  
1.0  
1.0  
2.0  
100  
100  
75  
50  
50  
-0.070  
-0.065  
-0.060  
±0.055  
±0.030  
1N5231B  
1N5232B  
1N5233B  
1N5234B  
1N5235B  
5.1  
5.6  
6.0  
6.2  
6.8  
20  
20  
20  
20  
20  
17  
11  
7.0  
7.0  
5.0  
1600  
1600  
1600  
1000  
750  
5.0  
5.0  
5.0  
5.0  
3.0  
1.9  
2.9  
3.3  
3.8  
4.8  
2.0  
3.0  
3.5  
4.0  
5.0  
50  
50  
50  
50  
30  
±0.030  
+0.038  
+0.038  
+0.045  
+0.050  
1N5236B  
1N5237B  
1N5238B  
1N5239B  
1N5240B  
1N5241B  
1N5242B  
1N5243B  
1N5244B  
1N5245B  
1N5246B  
1N5247B  
1N5248B  
1N5249B  
1N5250B  
7.5  
8.2  
8.7  
9.1  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
20  
20  
20  
20  
20  
6.0  
8.0  
8.0  
10  
17  
22  
30  
13  
15  
16  
17  
19  
21  
23  
25  
500  
500  
600  
600  
600  
600  
600  
600  
600  
600  
600  
600  
600  
600  
600  
3.0  
3.0  
3.0  
3.0  
3.0  
2.0  
1.0  
0.5  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
5.7  
6.2  
6.2  
6.7  
7.6  
8.0  
8.7  
9.4  
9.5  
10.5  
11.4  
12.4  
13.3  
13.3  
14.3  
6.0  
6.5  
6.5  
7.0  
8.0  
8.4  
9.1  
9.9  
10  
11  
12  
13  
14  
30  
30  
30  
30  
30  
30  
10  
10  
10  
10  
10  
10  
10  
10  
10  
+0.058  
+0.062  
+0.065  
+0.068  
+0.075  
+0.076  
+0.077  
+0.079  
+0.082  
+0.082  
+0.083  
+0.084  
+0.085  
+0.086  
+0.086  
20  
20  
9.5  
9.0  
8.5  
7.8  
7.4  
7.0  
6.6  
6.2  
14  
15  
1N5251B  
1N5252B  
1N5253B  
1N5254B  
1N5255B  
22  
24  
25  
27  
28  
5.6  
5.2  
5.0  
4.6  
4.5  
29  
33  
35  
41  
44  
600  
600  
600  
600  
600  
0.1  
0.1  
0.1  
0.1  
0.1  
16.2  
17.1  
18.1  
20  
17  
18  
19  
21  
21  
10  
10  
10  
10  
10  
+0.087  
+0.088  
+0.089  
+0.090  
+0.091  
20  
1N5256B  
1N5257B  
1N5258B  
1N5259B  
1N5260B  
30  
33  
36  
39  
43  
4.2  
3.8  
3.4  
3.2  
3.0  
49  
58  
70  
80  
93  
600  
700  
700  
800  
900  
0.1  
0.1  
0.1  
0.1  
0.1  
22  
24  
26  
29  
31  
23  
25  
27  
30  
33  
10  
10  
10  
10  
10  
+0.091  
+0.092  
+0.093  
+0.094  
+0.095  
Rev. 20190114  
1N5221B(UR)-1N5281B(UR)  
SILICON ZENER DIODES  
High-reliability discrete products  
and engineering services since 1977  
Max Zener Voltage  
Temp. Coeff.  
(A&B Suffix Only)  
Max Reverse Leakage Current  
Max Zener Impedance  
A&B Suffix Only(2)  
A, B, & D Suffix  
Non Suffix  
Test  
Nominal  
Current  
Only  
Zener Voltage  
IZT  
IR  
µA  
VR  
Volts  
IR @ VR Used For  
Suffix A  
αVZ (%/°C)(3)  
VZ @ IZT  
Volts  
Part Number (1)  
mA  
@
ZZT @ IZT  
ZZT @ IZK=0.25mA  
µA  
Ohms  
Ohms  
A
B,C&D  
1N5261B  
1N5262B  
1N5263B  
1N5264B  
1N5265B  
1N5266B  
1N5267B  
1N5268B  
1N5269B  
1N5270B  
1N5271B  
1N5272B  
1N5273B  
1N5274B  
1N5275B  
47  
51  
56  
60  
62  
68  
75  
82  
87  
2.7  
2.5  
2.2  
2.1  
2.0  
1.8  
1.7  
1.5  
1.4  
1.4  
1.3  
1.1  
1.0  
0.95  
0.90  
105  
125  
150  
170  
185  
230  
270  
330  
370  
400  
500  
750  
900  
1100  
1300  
1000  
1100  
1300  
1400  
1400  
1600  
1700  
2000  
2200  
2300  
2600  
3000  
4000  
4500  
4500  
0.1  
34  
37  
41  
44  
45  
49  
53  
59  
65  
66  
72  
80  
86  
94  
101  
36  
39  
43  
46  
47  
52  
56  
62  
68  
69  
76  
84  
91  
99  
106  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
+0.095  
+0.096  
+0.096  
+0.097  
+0.097  
+0.097  
+0.098  
+0.098  
+0.099  
+0.099  
+0.110  
+0.110  
+0.110  
+0.110  
+0.110  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
91  
100  
110  
120  
130  
140  
1N5276B  
1N5277B  
1N5278B  
1N5279B  
1N5280B  
1N5281B  
150  
160  
170  
180  
190  
200  
0.85  
0.80  
0.74  
0.68  
0.66  
0.65  
150  
170  
190  
2200  
2400  
2500  
5000  
5500  
5500  
6000  
6500  
7000  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
108  
116  
123  
130  
137  
144  
114  
122  
129  
137  
144  
152  
10  
10  
10  
10  
10  
10  
+0.110  
+0.110  
+0.110  
+0.110  
+0.110  
+0.110  
NOTE 1: The electrical characteristics are measured after allowing the device to stabilize for 20 seconds when mounted with a 3/8” minimum lead length from the case.  
NOTE 2: The zener impedance is derived from the 60HZ ac voltage, which results when an ac current having an r.m.s. value equal to 10% of the DC zener current  
(IZT or I ZK) is superimposed on IZT or I ZK. Zener impedance is measured at two points to insure a sharp knee on the breakdown curve, thereby eliminating unstable units.  
NOTE 3: Temperature coefficient (αVZ). Test conditions for temperature coefficient are a follows:  
a.  
IZT = 7.5 mA, T1 = 25°C,  
T2 = 125°C (1N5221A, thru 1N5242A, B.)  
b.  
IZT = Rated IZT, T1 = 25°C,  
T2 = 125°C (1N5243A, B thru 1N5281A, B.)  
Device to be temperature stabilized with current applied prior to reading breakdown voltage at the specified ambient temperature.  
Rev. 20190114  
1N5221B(UR)-1N5281B(UR)  
SILICON ZENER DIODES  
High-reliability discrete products  
and engineering services since 1977  
MECHANICAL CHARACTERISTICS  
Case:  
DO-35  
Marking:  
Polarity:  
Body painted, alpha-numeric  
Cathode band  
MECHANICAL CHARACTERISTICS  
Case:  
SOD-80  
Marking:  
Polarity:  
Alpha-numeric  
Cathode band  
Rev. 20190114  
1N5221B(UR)-1N5281B(UR)  
SILICON ZENER DIODES  
High-reliability discrete products  
and engineering services since 1977  
Rev. 20190114