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BPD-BQB334  
END- LOOK PACKAGE  
PIN PHOTO DIODE  
l Features  
Package Dimensions:  
1. Linear response vs. irradiance  
2. Fast switching time  
5.70 [.224]  
3. End-looking Package ideal for space  
limited applications  
Anode  
Cathode  
5.00 [.197]  
4. Lens Appearance: Water Clear.  
5. This product does
Substance, comply
l Description  
The BPD-BQB334 d
PIN silicon photodio
epoxy package whic
infrared light wavele
9]MIN.  
The receiving angle
reception over a lar
inches).  
ess otherwise specified.  
the leads emerge from  
The end-looking pac
PC board mounting
mechanically and sp
and GaAlAs series
ge without notice  
l Absolute Maximum Ratings(Ta=25)  
Parameter  
Power Dissipation  
Maximum Rating  
Unit  
100  
mW  
Reverse Breakdown Voltage  
Operating Temperature  
Storage Temperature Range  
60V  
-40~+85℃  
-45~+85℃  
http://www.ystone.com.tw  
BPD-BQB334  
Electrical Characteristics (Ta=25unless otherwise noted)  
PARAMETER  
Reverse Light Current  
Reverse Dark Current  
Reverse Break down Voltage  
Forward Voltage  
SYMBOL MIN  
TYP  
30  
-
MAX UNITS  
TEST CONDITIONS  
VR=5V, Ee=1mW/cm2  
VR=10V, Ee=0 mW/cm2  
IR=100μA  
IL  
ID  
-
-
100  
-
μA  
nA  
V
-
V(BR)  
VF  
35  
0.5  
400  
-
-
1.3  
1100  
V
IF=10mA  
Spectral range of sensitivity  
Wavelength of max
Total Capacitance  
λ10%  
940  
nm  
=3V, Ee=0, f=1.0MHZ  
Rise Time/ Fall Tim
20V, λ=940nm, RL=50Ω  
Angle of sensitivity  
l Typical Optical
Fig1.Relative Responsiv
g Characteristics  
1.0  
VR=5V  
IF=20mA  
0.8  
0.6  
0.4  
0.2  
0.0  
600  
400 500  
700 80
0.8  
1.0  
4  
0.6  
Wavele
tween Lens Tips-inches  
Fig3.Normalized L
Reverse Voltage  
Reverse Voltage  
lized Light Current vs  
Ambient Temperture  
1.20  
1.10  
1.00  
10.0  
8.0  
1.15  
1.10  
1.05  
Ee=0mW/cm2  
f=1MHz  
VR=5V  
λ=940nm  
Normalized to  
Ta=25 C  
6.0  
1.00  
4.0  
2.0  
0.0  
.95  
.90  
.85  
0.90  
0.80  
λ
=940nm  
Normalized to VR=5V  
0
10  
20  
30  
40  
50  
60  
-40  
0
100  
-20  
20 40  
60 80  
0
10  
20  
30  
40  
50  
60  
Reverse Voltage(V)  
Reverse Voltage  
Ambient Temperature ( C)  
FIG.8 Radiant Diagram  
Fig6.Light Current vslrradiance  
Fig7.Switching Time Test Circuit  
0
10  
20  
IF  
10  
VR  
30  
VR=5V  
=940nm  
λ
1
40  
50  
1.0  
0.9  
OUT  
RL  
60  
70  
0.1  
0.8  
0.7  
Note:  
80  
90  
See Above For tr/tf Conditions  
0.01  
1
0.1  
0.01  
10  
0.5  
0.2 0.4 0.6  
lrradiance-mW/cm2  
http://www.ystone.com.tw  
BPD-BQB334  
Dip Soldering  
300  
Max:260,5sec.  
Suggest:2~3sec.  
250  
200  
150  
100  
Fluxing  
50  
30  
10  
110  
120  
1. Please avoid an
epoxy while the
2. DIP soldering a
3. After soldering,
vibration until th
4. Avoid rapid coo
5. Although the so
soldering at the
IRON Soldering  
AMax350Within 3 sec. One time only.  
BThe products of 3mm without flange, welding condition of flat plate PCB Max:  
350Within 2 sec. One time only  
3.0(.118)  
PCB  
http://www.ystone.com.tw  
BPD-BQB334  
Photodiode Specification  
Commodity: Photodiode  
Collector Current Bin Limits (VR=5V, Ee=1mW/cm2)  
BIN CODE  
Min.( μA)  
Max.( μA)  
W
X
Y
Z
1
.3  
.6  
.8  
.9  
.3  
.2  
2
NOTES: Tolerance
http://www.ystone.com.tw