BA-12BJ3UI--Datasheet/数据表在线中文翻译

BA-12BJ3UI

●

Package Dimensions :

●

Features :

1. Emitting area : 4.0×1.5×12（mm）

2. Low power requirement.

4.30x11=47.30(1.862)

4.00(.157)

0.25(.010)

1.60(.063)

3. Excellent characters appearance.

4. Solid state reliability.

BJ BJ BJ BJ BJ BJ BJ BJ BJ BJ BJ BJ

56.00(2.205)

58.00(2.283)

0.50(.020)

5. Categorized for luminous intensity.

6. Universal pin out.

8.00(.315)

0.50

(.020)

3.5±0.5(.138±020)

2.54x20=50.80(2.00)

●

Description :

Notes:

1. All dimensions are in millimeters(inches).

2. Tolerance is ±0.25mm(.01")unless otherwise

1. The BA-12BJ3UI is 12 bar graph array

display.

specified.

2. This product use super blue chips, which

are made from GaN on SiC substrate.

3. This product have a gray face and white

segments.

3. Specifications are subject to change without

notice.

4. This product doesn't contain restricted

substance, comply ROHS standard.

● Internal Circuit Diagram :

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BA-12BJ3UI

● Absolute Maximum Ratings(Ta=25℃)

Parameter

Symbol

Rating

120

30

Unit

mW

mA

V

Power Dissipation Per Segment

Forward Current Per Segment

Peak Forward Current Per Segment

Pd

I_F

I_FP

150

5

(Duty 1/10, 1KHZ)

Reverse Voltage Per Segment

Operating Temperature

Storage Temperature

V_R

-40℃~85℃

Topr

Tstg

Tsol

-

Soldering Temperature

(1/16" From Body)

260℃ For 5 Seconds

● Electrical And Optical Characteristics(Ta=25℃)

Parameter

Forward Voltage Per Segment

Luminous Intensity Per Segment

Reverse Current Per Segment

Peak Wave Length

Symbol Condition Min.

Typ.

3.5

Max.

Unit

V

Vf

Iv

I_F=10mA

V =5V

-

4.0

-

5.0

-

100

-

mcd

µA

I

-

λp

d

I_F=10mA

-

460

-

470

-

nm

Dominant Wave Length

480

-

∆λ

Spectral Line Half-width

26

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BA-12BJ3UI

● Typical Electro-Optical Characteristics Curves

(25℃ Ambient Temperature Unless Otherwise Noted)

Fig.1 Relative Radiant Intensity VS. Wavelength

1.0

0.5

0

370

410

440

470

500

530

560

Wavelength(nm)

Fig.3 Relative Luminous

Intensity VS.

Fig.2 Forward Current VS.

Forward Voltage

Ambient Temperature

50

40

30

20

10

0

3.0

2.5

2.0

1.5

1.0

0.5

0

1

2

3

4

5

-40 -20

0

20

40

60

Ambient Temperature Ta( C)

Forward Voltage (V)

Fig.4 Relative Luminous

Intensity VS.

Fig.5 Forward Current

Derating Curve VS.

Ambient Temperature

Forward Current

50

3.0

2.0

40

30

20

1.0

0.0

10

0

20 40 60 80 100 120

0

10

20

30

40

50

Forward Current(mA)

Ambient Temperature Ta( C)

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BA-12BJ3UI

● Dip Soldering

300

Max:260℃,5sec.

Suggest:2~3sec.

250

200

150

100

Fluxing

50

30

Preheat

40

50

10

20

30

60

ec.)

70

80

90

100

110

120

IME(s

T

1. Please avoid any external stress applied to the lead-frames and

epoxy while the LEDs are at high temperature, especially during soldering

2. DIP soldering and hand soldering should not be done more than one time.

3. After soldering, avoid the epoxy lens from mechanical shock or

vibration until the LEDs are back to room temperature.

4. Avoid rapid cooling during temperature ramp-down process

5. Although the soldering condition is recommended above,

soldering at the lowest possible temperature is feasible for the LEDs

● IRON Soldering

350℃ Within 3 sec., One time only.

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