BPT-BP2934--Datasheet/数据表在线中文翻译

BPT-BP2934

END- LOOK PACKAGE

PHOTOTRANSISTOR

l Features

● Package Dimensions:

Collector

Emitter

1. Wide range of collector current.

2. High sensitivity.

5.70 [.224]

Emitter

Collector

3. Low cost plastic package.

5.00 [.197]

4. Lens Appearance: Black

5. This product doesn't contain restriction

Substance, comply RoHS standard

8.60 [.339]

1.00 [.039]

1.5[.059]

MAX.

0.50 [.020]

SQ.TYP.

l Description

23.4[.921]MIN.

The BPT-BP2934 is a NPN silicon phototransistor

mounted in a lensed , special dark plastic package .

The lensing effect of the package allows an

acceptance view angle of 15∘that is

measured from the optical axis to the half

power point .

1.00 [.039]MIN.

2.54 [.100]

NOM.

NOTES:

1. All dimensions are in millimeters (inches).

2. Tolerance is ±0.25mm (0.01’) unless otherwise specified.

3. Lead spacing is measured where the leads emerge from

the package

4. Specifications are subject to change without notice

l Absolute Maximum Ratings(Ta=25℃)

Parameter

Power Dissipation

Maximum Rating

Unit

mW

V

100

30

5

Collector- Emitter Voltage

Emitter- Collector Voltage

Operating Temperature

Storage Temperature Range

V

-40℃~+85℃

-45℃~+85℃

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BPT-BP2934

l Electrical Characteristics (Ta=25℃ unless otherwise noted)

PARAMETER SYMBOL MIN TYP MAX UNITS

TEST CONDITIONS

I_C=0.1mA, Ee=0mW/cm²

I_R=0.1mA, Ee=0 mW/cm²

I_C=0.1 mA, Ee=1.0 mW/cm²

Collector- Emitter Breakdown Voltage V_(BR)CEO

Emitter-Collector Breakdown Voltage V_(BR)ECO

Collector- Emitter Saturation Voltage V_CE(SAT)

30

5

-

V

-

0.5

1100

V

Spectral range of sensitivity

Wavelength of max sensitivity

Rise Time

λ10%

λp

750

940

15

-

nm

μS

uA

mA

deg

T_r

-

Vcc=5V, R_L=1KΩ, I_C=1mA

V_CE=10V, E_e=0 mW/cm²

V_CE=5V, E_e=1.0mW/cm²

Fall Time

T_f

Collector Dark Current

On State Collector Current

Viewing Angle

I_CEO

I_C(ON)

2θ_1/2

0.1

-

1.8

15

l Typical Optical-Electrical Characteristic Curves

FIG.1 Relative Response vs.

Wavelength

FIG.2 Dark Current Vs.

Ambient Temperature

FIG.3 Power Dissipation Vs.

Ambient Temperature

1.0

120

10000

100

1000

0.8

0.6

100

10

80

60

0.4

0.2

1

40

20

0.1

0.01

0

0.0

700

0

20

60 80 100 120

-25

0

25

50 75 100 125

40

800

900

1000

1100

Ambient Temperature (°C)

λ

-Wavelength-nm

FIG.4 Rise And Fall Time Vs.

Load Resistance

FIG.6 Radiant Diagram

FIG.5 Relative Collector Current Vs.

Irradiance

0

10

20

Vcc=5V

30

2.5

F=100Hz

16

12

8

Vce=5V

2.0

40

50

Tf

Tr

1.0

1.5

1.0

0.5

0

0.9

0.8

60

70

4

80

90

0.7

0

0.2

0.5

0

0.4

0.6

0.8

1.0

0

1.5 2.0 2.5 3.0

1.0

0.5

0.2 0.4 0.6

0.3 0.1

2

Irradiance (mW/cm )

Load Resistance (K )

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BPT-BP2934

● Dip Soldering

300

Max:260℃,5sec.

Suggest:2~3sec.

250

200

150

100

Fluxing

50

30

Preheat

40

10

20

30

50

TIM

60

70

80

90

100

110

120

.)

E(sec

1. Please avoid any external stress applied to the lead-frames and

epoxy while the LEDs are at high temperature, especially during soldering

2. DIP soldering and hand soldering should not be done more than one time.

3. After soldering, avoid the epoxy lens from mechanical shock or

vibration until the LEDs are back to room temperature.

4. Avoid rapid cooling during temperature ramp-down process

5. Although the soldering condition is recommended above,

soldering at the lowest possible temperature is feasible for the LEDs

● IRON Soldering

A：Max：350℃ Within 3 sec. One time only.

B：The products of 3mm without flange, welding condition of flat plate PCB Max：

350℃ Within 2 sec. One time only

3.0(.118)

PCB

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BPT-BP2934

Phototransistor Specification

2 Commodity: Phototransistor

2 Intensity Bin Limits (V_CE=5V,Ee=1.0mw/cm²)

BIN CODE

Min.(Ma)

Max.(Ma)

0.716

1.031

1.486

2.139

3.081

1.031

1.486

2.139

3.081

3.697

Q

R

S

T

U

NOTES: Tolerance of measurement of Radiant Intensity :±15%

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