BPD-BQB934--Datasheet/数据表在线中文翻译

BPD-BQB934

END- LOOK PACKAGE

PIN PHOTO DIODE

l Features

●Package Dimensions:

5.70 [.224]

1. Linear response vs. irradiance

2. Fast switching time

3. End-looking Package ideal for space

Limited applications

Anode

Cathode

5.00 [.197]

4. Lens Appearance: Black

8.60 [.339]

5. This product doesn't contain restriction

1.00 [.039]

Substance, comply RoHS standard

1.5[.59]

MAX.

l Description

23.4[.921]MIN.

The BPD-BQB934 device consists of a PIN

silicon photodiode molded in a black epoxy

package which allows spectral response

infrared light wavelengths.

0.50 [.020]

SQ.TYP

1.00 [.039]MIN.

The wide receiving angleprovides relatively

even reception over a large area.

The side-looking package is designed for

easy PC board mounting.

2.54 [.100]NOM

NOTES:

1. All dimensions are in millimeters (inches).

2. Tolerance is ±0.25mm (0.01’) unless otherwise specified.

3. Lead spacing is measured where the leads emerge from

the package

4. Specifications are subject to change without notice

This photodiode is mechanically and spectrally

matched to BRIGHT’s GaAs and GaAlAs series

of infrared emitting diodes.

l Absolute Maximum Ratings(Ta=25℃)

Parameter

Dissipation

Maximum Rating

Unit

100

mW

Reverse Breakdown Voltage

Operating Temperature

Storage Temperature Range

60V

-40℃~+85℃

-45℃~+85℃

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BPD-BQB934

l Electrical Characteristics (Ta=25℃ unless otherwise noted)

PARAMETER

Reverse Light Current

Reverse Dark Current

Reverse Break down Voltage

Forward Voltage

SYMBOL MIN

TYP MAX UNITS

TEST CONDITIONS

V_R=5V.Ee=1mW/cm²

V_R=10V.Ee=0 mW/cm²

I_R=100μA

μA

I_L

I_D

-

40

-

100

-

nA

V

V_(BR)

V_F

35

-

1.3

1100

V

I_F=10mA

Spectral range of sensitivity

Wavelength of max sensitivity

Total Capacitance

λ10%

λp

750

940

5

nm

PF

ns

C_T

-

V_R=5V.Ee=0,f=1.0MHZ

10

20

Rise Time/ Fall Time

tr/tf

2θ_1/2

V_R=20V,λ=940nm.RL=50Ω

Angle of sensitivity

deg

l Typical Optical-Electrical Characteristic Curves

Fig2.Coupling Characteristics

Fig1. Relative Response vs. Wavelength

1.0

0.9

VR=5V

IF=20mA

0.8

0.6

0.4

0.2

0.0

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

1000

1100

700

800

900

0.0

0.2

0.8

1.0

0.4

0.6

Wavelength (nm)

Distance Between Lens Tips-inches

Fig3.Normalized Light Current vs

Reverse Voltage

Fig4.Total Capacitance vs

Reverse Voltage

Fig5.Normalized Light Current vs

Ambient Temperture

VR=5V

λ=940nm

Normalized to

1.20

1.10

1.00

10.0

8.0

1.15

1.10

1.05

Ee=0mW/cm²

f=1MHz

Ta=25

C

6.0

1.00

4.0

2.0

0.0

.95

.90

.85

0.90

0.80

λ

=940nm

Normalized to VR=5V

0

10

20

30

40

50

60

-40

0

100

-20

20 40

60 80

0

10

20

30

40

50

60

Reverse Voltage(V)

Reverse Voltage

Ambient Temperature ( C)

FIG.8 Radiant Diagram

Fig6.Light Current vslrradiance

Fig7.Switching Time Test Circuit

0

10

20

IF

10

VR

30

VR=5V

=940nm

λ

1

40

50

1.0

0.9

OUT

RL

60

70

0.1

0.8

0.7

Note:

80

90

See Above For tr/tf Conditions

0.01

1

0.1

0.01

10

0.5

0.2 0.4 0.6

lrradiance-mW/cm²

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BPD-BQB934

● Dip Soldering

300

Max:260℃,5sec.

Suggest:2~3sec.

250

200

150

100

Fluxing

50

30

Preheat

40

10

20

30

50

TIM

60

70

80

90

100

110

120

.)

E(sec

1. Please avoid any external stress applied to the lead-frames and

epoxy while the LEDs are at high temperature, especially during soldering

2. DIP soldering and hand soldering should not be done more than one time.

3. After soldering, avoid the epoxy lens from mechanical shock or

vibration until the LEDs are back to room temperature.

4. Avoid rapid cooling during temperature ramp-down process

5. Although the soldering condition is recommended above,

soldering at the lowest possible temperature is feasible for the LEDs

● IRON Soldering

A：Max：350℃ Within 3 sec. One time only.

B：The products of 3mm without flange, welding condition of flat plate PCB Max：

350℃ Within 2 sec. One time only

3.0(.118)

PCB

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BPD-BQB934

Infrared Emitting Diode Specification

˜ Commodity: Phototransistor.

˜ Collector Current Bin Limits (V_R=5V.Ee=1mW/cm²)

BIN CODE

Min.(uA)

25.6

Max.(uA)

30.8

36.9

44.3

53.2

64.0

Y

Z

1

2

3

30.8

36.9

44.3

53.2

NOTES: Tolerance of measurement of Radiant Intensity

:±15%

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