10BQ100PBF--Datasheet/数据表在线中文翻译

Bulletin PD-20786 rev. A 07/04

10BQ100PbF

1 Amp

SCHOTTKY RECTIFIER

I_F(AV)= 1.0Amp

V_R= 100V

Major Ratings and Characteristics

Description/ Features

The 10BQ100PbF surface-mount Schottky rectifier has been

designed for applications requiring low forward drop and very

small foot prints on PC boards. Typical applications are in disk

drives, switching power supplies, converters, free-wheeling

diodes, battery charging, and reverse battery protection.

Characteristics

Value

Units

I

Rectangular waveform

1.0

A

F(AV)

V

I

100

780

0.62

V

A

V

Small foot print, surface mountable

Low forward voltage drop

High frequency operation

RRM

@tp=5µssine

FSM

Guard ring for enhanced ruggedness and long term

V

@1.0Apk, T =125°C

J

reliability

F

J

Lead-Free ("PbF" suffix)

T

range

-55 to175

°C

Case Styles

10BQ100PbF

SMB

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1

10BQ100PbF

Bulletin PD-20786 rev. A 07/04

Voltage Ratings

Part number

Max. DC Reverse Voltage (V)

V_RWMMax. Working Peak Reverse Voltage (V)

10BQ100PbF

V_R

100

Absolute Maximum Ratings

Parameters

10BQ Units Conditions

I_F(AV)Max. Average Forward Current

1.0

A

50%duty cycle@T_L=152°C,rectangular waveform

I_FSMMax. PeakOneCycleNon-Repetitive

Surge Current

780

A

5µs Sineor3µsRect.pulse

Following any rated

load condition and

38

1.0

0.5

10msSineor6msRect. pulse with rated V_RRMapplied

E_ASNon-Repetitive Avalanche Energy

mJ T_J=25°C,I_AS=0.5A,L=8mH

I_AR

Repetitive Avalanche Current

A

Current decayinglinearlytozeroin1µsec

Frequencylimited byT_Jmax.Va=1.5xVr typical

Electrical Specifications

Parameters

10BQ Units

Conditions

V_FMMax. Forward Voltage Drop

* See Fig. 1

(1)

0.78

0.89

0.62

0.72

0.5

V

@ 1A

@ 2A

@ 1A

T_J= 25 °C

T_J= 125 °C

@ 2A

I_RMMax. Reverse Leakage Current (1)

* See Fig. 2

mA T_J= 25 °C

mA T_J= 125 °C

V_R= rated V_R

1

C_T

L_S

Typical Junction Capacitance

Typical Series Inductance

42

2.0

10000

pF

V_R= 5V_DC, (test signal range 100kHz to 1MHz) 25°C

nH Measured lead to lead 5mm from package body

V/ µs

dv/dt Max. Volatge Rate of Charge

(Rated V_R)

(1) Pulse Width < 300µs, Duty Cycle < 2%

Thermal-Mechanical Specifications

Parameters

10BQ Units

Conditions

T_J

Max.Junction Temperature Range(*) -55 to175 °C

T_stgMax. Storage Temperature Range -55 to175 °C

R_thJLMax. Thermal Resistance Junction

36

80

°C/W DC operation

°C/W

to Lead

(**)

R_thJAMax. Thermal Resistance Junction

to Ambient

wt

Approximate Weight

0.10(0.003) g(oz.)

Case Style

Device Marking

SMB

IR1J

Similar DO-214AA

(*) dPtot

dTj

1

<

thermal runaway condition for a diode on its own heatsink

Rth(j-a)

(**) Mounted 1 inch square PCB

2

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10BQ100PbF

Bulletin PD-20786 rev. A 07/04

10

1

Tj = 175˚C

150˚C

125˚C

100˚C

0.1

75˚C

50˚C

Tj = 175˚C

Tj = 125˚C

Tj = 25˚C

0.01

0.001

0.0001

0.00001

25˚C

0

20

40

60

80

100

ReverseVoltage-V_R(V)

Fig.2-Typical Peak Reverse Current

Vs. Reverse Voltage

1

100

T

= 25˚C

J

0.1

0.2

10

0.4

0.6

0.8

1

0

20

40

60

80

100

Forward Voltage Drop-V_FM(V)

ReverseVoltage-V_R(V)

Fig. 1-Maximum Forward Voltage Drop Characteristics

Fig.3-Typical Junction Capacitance

Vs. Reverse Voltage

100

D = 0.75

D = 0.50

D = 0.33

D = 0.25

D = 0.20

10

P

DM

t

1

t

2

1

Notes:

Single Pulse

(Thermal Resistance)

1. Duty factor D = t1/ t2

.

2. Peak Tj = Pdm x ZthJC + Tc

.

0.1

0.00001

0.0001

0.001

t₁, RectangularPulseDuration(Seconds)

Fig.4-Max. Thermal Impedance Z _thJCCharacteristics (PerLeg)

0.01

0.1

1

10

100

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3

10BQ100PbF

Bulletin PD-20786 rev. A 07/04

180

1

0.8

0.6

0.4

0.2

0

D = 0.20

D = 0.25

D = 0.33

D = 0.50

D = 0.75

D = 0.20

D = 0.25

D = 0.33

D = 0.50

D = 0.75

170

DC

160

150

140

DC

RMS Limit

Square wave (D = 0.50)

130

Rated Vr applied

120

see note (2)

110

0

0.4

0.8

1.2

1.6

0

0.3

0.6

0.9

1.2

1.5

Average Forward Current-I _F(AV)(A)

Average Forward Current- I _F(AV)(A)

Fig. 5-Maximum Average Forward Dissipation

Vs. Average Forward Current

Fig. 4-Maximum Average Forward Current

Vs. Allowable Lead Temperature

1000

100

At Any Rated Load Condition

And With rated Vrrm Applied

Following Surge

10

100

1000

10000

SquareWavePulseDuration-T_p(Microsec)

Fig.6-Maximum Peak Surge Forward Current Vs. Pulse Duration

(2) Formulaused:T_C=T_J-(Pd+Pd_REV)xR_thJC

;

Pd=ForwardPowerLoss=I_F(AV)xV_FM@(I_F(AV)/D) (seeFig.6);

Pd_REV=InversePowerLoss=V_R1xI_R(1-D); I_R@V_R1=80%ratedV_R

4

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10BQ100PbF

Bulletin PD-20786 rev. A 07/04

Outline Table

CATHODE

1

ANODE

Device Marking: IR1J

2

2.15 (.085)

1.80 (.071)

3.80 (.150)

3.30 (.130)

2

POLARITY

PART NUMBER

1

4.70 (.185)

4.10 (.161)

2.5 TYP.

SOLDERING PAD

(.098 TYP.)

2.40 (.094)

1.90 (.075)

0.30 (.012)

1.30 (.051)

0.76 (.030)

0.15 (.006)

2.0 TYP.

(.079 TYP.)

5.60 (.220)

5.00 (.197)

4.2 (.165)

4.0 (.157)

Outline SMB

Dimensions in millimeters and (inches)

For recommended footprint and soldering techniques refer to application note #AN-994

Marking & Identification

Each device has 2 rows for identification. The first row designates the device as manufactured by International

Rectifier, indicated by the letters "IR", and the Part Number (indicates the current, the voltage rating and

Schottky Generation). The second row indicates the year, the week of manufacturing and the Site ID.

IR1J

VOLTAGE

CURRENT

IR LOGO

PYWWX

SITE ID

WEEK

2nd digit of the YEAR

"Y" = 1st digit of the YEAR "standard product"

"P" = "Lead-Free"

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10BQ100PbF

Bulletin PD-20786 rev. A 07/04

Tape & Reel Information

Dimensions in millimetres and (inches)

Ordering Information Table

Device Code

10

B

Q

100 TR PbF

1

2

4

5

6

3

1

-

Current Rating

2

3

4

5

B

= Single Lead Diode

= Schottky Q Series

Q

Voltage Rating (100 = 100V)

y none= Box (1000 pieces)

y TR = Tape & Reel

y none= Standard Production

y PbF = Lead-Free

(3000 pieces)

6

-

10BQ100

********************************************************************************

* SPICE Model Diode

********************************************************************************

*

.SUBCKT 10BQ100 ANO CAT

D1 ANO 1 CAT

*Define diode model

.model D10BQ100 D(Is=341.4E-06 N=2.664 Rs=3.65E-03 Ikf=37.08E-03 Xti=2 Eg=1.11

+

Cjo=65.57E-12 M=.5751 Vj=4.282 Fc=0.5 Isr=17.26E-27 Nr=5.662

Bv=119.9 Ibv=215.5E-06 Tt=43.28E-09)

********************************************************************************

.ENDS 10BQ100

6

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10BQ100PbF

Bulletin PD-20786 rev. A 07/04

Data and specifications subject to change without notice.

This product has been designed and qualified for Industrial Level and Lead-Free.

Qualification Standards can be found on IR's Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7309

Visit us at www.irf.com for sales contact information. 07/04

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