100B0R3BW--Datasheet/数据表在线中文翻译

Document Number: MW4IC2230N

Rev. 6, 5/2006

Freescale Semiconductor

Technical Data

RF LDMOS Wideband Integrated

Power Amplifiers

The MW4IC2230N wideband integrated circuit is designed for W-CDMA

base station applications. It uses Freescale’s newest High Voltage (26 to 28

Volts) LDMOS IC technology and integrates a multi-stage structure. Its

wideband on-chip design makes it usable from 1600 to 2400 MHz. The linearity

performances cover all modulations for cellular applications: GSM, GSM

EDGE, TDMA, CDMA and W-CDMA.

MW4IC2230NBR1

MW4IC2230GNBR1

2110-2170 MHz, 30 W, 28 V

SINGLE W-CDMA

RF LDMOS WIDEBAND

Final Application

• Typical Single-Carrier W-CDMA Performance: V_DD= 28 Volts, I_DQ1

=

60 mA, I_DQ2= 350 mA, P_out= 5 Watts Avg., f = 2140 MHz, Channel

INTEGRATED POWER AMPLIFIERS

Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.

Power Gain — 31 dB

Drain Efficiency — 15%

ACPR @ 5 MHz = -45 dBc in 3.84 MHz Bandwidth

Driver Application

• Typical Single-Carrier W-CDMA Performance: V_DD= 28 Volts, I

=

60 mA, I_DQ2= 350 mA, P_out= 0.4 Watts Avg., f = 2140 MHz, Ch^Dan^Qn¹el

Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.

Power Gain — 31.5 dB

CASE 1329-09

TO-272 WB-16

PLASTIC

ACPR @ 5 MHz = -53.5 dBc in 3.84 MHz Bandwidth

MW4IC2230NBR1

• Capable of Handling 3:1 VSWR, @ 28 Vdc, 2170 MHz, 5 Watts CW

Output Power

• Stable into a 3:1 VSWR. All Spurs Below -60 dBc @ 10 mW to 5 W CW

P_out

.

Features

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• On-Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output)

CASE 1329A-03

TO-272 WB-16 GULL

PLASTIC

• Integrated Quiescent Current Temperature Compensation

MW4IC2230GNBR1

with Enable/Disable Function

• On-Chip Current Mirror g_mReference FET for Self Biasing Application ⁽¹⁾

• Integrated ESD Protection

• 200°C Capable Plastic Package

• N Suffix Indicates Lead-Free Terminations. RoHS Compliant.

• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel

1

2

3

4

5

V

GND

RD1

16

15

GND

V

DS2

RD1

RG1

V

RG1

V

DS1

V

DS2

V

DS3/

RF

in

DS1

3 Stages I

6

14

C

out

7

8

9

10

V

GS1

V

GS2

V

GS3

RF

in

V /RF

DS3 out

13

12

GND

11

GND

V

GS1

V

GS2

V

GS3

Quiescent Current

Temperature Compensation

(Top View)

Note: Exposed backside flag is source

terminal for transistors.

Figure 1. Functional Block Diagram

Figure 2. Pin Connections

1. Refer to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1987.

MW4IC2230NBR1 MW4IC2230GNBR1

RF Device Data

Freescale Semiconductor

1

Table 1. Maximum Ratings

Rating

Symbol

Value

-0.5, +65

-0.5, +8

-65 to +175

200

Unit

Vdc

°C

Drain-Source Voltage

Gate-Source Voltage

Storage Temperature Range

Operating Channel Temperature

Input Power

V

DSS

V

GS

T

stg

T

J

°C

P

in

20

dBm

Table 2. Thermal Characteristics

(1)

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

R

°C/W

θ

JC

Stage 1

Stage 2

Stage 3

10.5

5.1

2.3

Table 3. ESD Protection Characteristics

Test Conditions

Class

Human Body Model

2 (Minimum)

M3 (Minimum)

C5 (Minimum)

Machine Model

Charge Device Model

Table 4. Moisture Sensitivity Level

Test Methodology

Rating

Package Peak Temperature

Unit

Per JESD 22-A113, IPC/JEDEC J-STD-020

3

260

°C

Table 5. Electrical Characteristics (T = 25°C unless otherwise noted)

C

Characteristic

Symbol

Min

= 60 mA, I = 350 mA, I

DQ2

Typ

Max

= 265 mA,

DQ3

Unit

Functional Tests (In Freescale Test Fixture, 50 ohm system) V = 28 Vdc, I

DD

DQ1

P

out

= 0.4 W Avg., f = 2110 MHz, f = 2170 MHz, Single-carrier W-CDMA. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz

Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF.

Power Gain

G

29

—

31.5

-25

—

dB

ps

Input Return Loss

IRL

-10

Adjacent Channel Power Ratio

ACPR

dBc

P

out

P

out

= 0.4 W Avg.

= 1.26 W Avg.

—

-53.5

-52

-50

—

Typical Performances (In Freescale Test Fixture tuned for 0.4 W Avg. W-CDMA driver) V = 28 Vdc, I

= 60 mA, I

= 350 mA,

DD

DQ1

DQ2

I

= 265 mA, 2110 MHz<Frequency <2170 MHz

DQ3

Saturated Pulsed Output Power

(f = 1 kHz, Duty Cycle 10%)

P

sat

—

43

—

W

(2)

Quiescent Current Accuracy over Temperature (-10 to 85°C)

Gain Flatness in 30 MHz Bandwidth

ΔI

—

5

0.13

1

—

%

dB

°

QT

G

F

Deviation from Linear Phase in 30 MHz Bandwidth

Φ

Delay @ P = 0.4 W CW Including Output Matching

Delay

1.6

15

ns

°

out

Part-to-Part Phase Variation

ΔΦ

1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

2. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family. Go to http://www.freescale.com/rf. Select

Documentation/Application Notes - AN1977.

(continued)

MW4IC2230NBR1 MW4IC2230GNBR1

RF Device Data

Freescale Semiconductor

2

Table 5. Electrical Characteristics (T = 25°C unless otherwise noted) (continued)

C

Characteristic

Symbol

Min

Typ

Max

Unit

Typical Performances (In Freescale Reference Application Circuit tuned for 2-carrier W-CDMA signal) V = 28 Vdc,

DD

P

out

= 0.4 W Avg., I

= 60 mA, I

= 400 mA, I

= 245 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz,

DQ1

DQ2

DQ3

2-carrier W-CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. IM3

measured in 3.84 MHz Channel Bandwidth @ 10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF.

Power Gain

G

—

31.5

-52

-55

-26

—

dB

dBc

dB

ps

Intermodulation Distortion

Adjacent Channel Power Ratio

Input Return Loss

IM3

ACPR

IRL

MW4IC2230NBR1 MW4IC2230GNBR1

RF Device Data

Freescale Semiconductor

3

V

D3

D2

+

1

2

3

4

5

DUT

16

C7

C3

C2

C5

D1

NC 15

Z2

+

NC

C1

C6

Z1

RF

OUTPUT

RF

INPUT

C9

Z4

Z5

Z6

Z7

14

6

C10

C11

C12

7

8

NC

V

R1

G1

Quiescent Current

Temperature Compensation

9

Z3

NC 13

12

10

11

V

G2 R2

G3 R3

+

V

C8

C4

Z1

Z2, Z3

Z4

2.180″ x 0.090″ Microstrip

0.040″ x 0.430″ Microstrip

0.350″ x 0.240″ Microstrip

0.420″ x 0.090″ Microstrip

Z6

Z7

PCB

1.120″ x 0.090″ Microstrip

0.340″ x 0.090″ Microstrip

Taconic TLX8-0300, 0.030″, ε = 2.55

r

Z5

Figure 3. MW4IC2230NBR1(GNBR1) Test Circuit Schematic

Table 6. MW4IC2230NBR1(GNBR1) Test Circuit Component Designations and Values

Part

C1, C2, C3, C4

Description

10 μF, 35 V Tantalum Capacitors

8.2 pF 100B Chip Capacitors

1.8 pF 100B Chip Capacitors

0.3 pF 100B Chip Capacitor

1.8 kW Chip Resistors (1206)

Part Number

TAJD106K035

Manufacturer

AVX

C5, C6, C7, C8, C12

C9, C10

100B8R2CW

100B1R8BW

100B0R3BW

ATC

C11

R1, R2, R3

MW4IC2230NBR1 MW4IC2230GNBR1

RF Device Data

Freescale Semiconductor

4

C2

C3

V

D2

MW4IC2230

Rev 1

V

D3

V

D1

C5

C7

C1

C12

C6

C9

C11

C10

C8

R1

V

G1

GND

R3

R2

V

G2

V

G3

C4

Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor

signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have

no impact on form, fit or function of the current product.

Figure 4. MW4IC2230NBR1(GNBR1) Test Circuit Component Layout

MW4IC2230NBR1 MW4IC2230GNBR1

RF Device Data

Freescale Semiconductor

5

TYPICAL CHARACTERISTICS

32

31

0

G

ps

−10

30

29

28

−20

−30

−40

IRL

V

P

= 28 Vdc

= 26 dBm (Avg.)

DD

out

I

DQ1

1−Carrier W−CDMA

= 60 mA, I

= 350 mA, I

= 265 mA

DQ2

DQ3

27

26

−50

−60

ACPR

2050

2100

2150

f, FREQUENCY (MHz)

2200

Figure 5. Single-Carrier W-CDMA Wideband

Performance @ P_out= 26 dBm

−40

−45

32

31

30

29

28

0

T

C

= 85_C

25_C

G

V

= 28 Vdc

= 60 mA, I

ps

DD

I

= 350 mA, I

DQ3

f = 2140 MHz, 1−Carrier W−CDMA

= 265 mA

DQ1

DQ2

−10

−20

−30

−40

−50

−60

IRL

−50

−55

−60

−30_C

V

P

= 28 Vdc

= 31 dBm (Avg.)

DD

out

I

DQ1

1−Carrier W−CDMA

= 60 mA, I

= 350 mA, I

= 265 mA

DQ2

DQ3

ACPR

27

26

0.1

1

, OUTPUT POWER (WATTS) AVG.

10

2050

2100

2150

f, FREQUENCY (MHz)

2200

P

out

Figure 6. Single-Carrier W-CDMA Wideband

Performance @ P_out= 31 dBm

Figure 7. Adjacent Channel Power Ratio

versus Output Power

33

0

32

31

−10

G

ps

−20

IRL

30

−30

−40

V

P

= 28 Vdc

= 26 dBm (Avg.)

DD

out

29

I

DQ1

2−Carrier W−CDMA

= 60 mA, I

= 400 mA, I

= 245 mA

DQ2

DQ3

IM3

−50

−60

28

27

ACPR

2050

2100

2150

f, FREQUENCY (MHz)

2200

Figure 8. 2-Carrier W-CDMA Wideband Performance

MW4IC2230NBR1 MW4IC2230GNBR1

RF Device Data

Freescale Semiconductor

6

TYPICAL CHARACTERISTICS

50

49

48

47

46

45

44

43

42

41

40

39

38

37

36

35

34

33

2.00

P3dB = 46.3 dBm (43 W)

P1dB = 45.3 dBm (34 W)

Ideal

V

= 28 Vdc, Small Signal

= 60 mA, I

DD

1.95

I

= 350 mA, I

= 265 mA

DQ1

DQ2

DQ3

1.90

Actual

1.85

1.80

1.75

1.70

1.65

V

= 28 Vdc

= 60 mA, I

DD

I

= 350 mA, I = 265 mA,

DQ3

1.60

1.55

DQ1

DQ2

Pulsed CW, 8 μsec(on), 1 msec(off)

f = 2140 MHz

1.50

2

4

6

8

10 12 14 16 18 20 22 24

1950

2000

2050

2100

2150

2200

2250

2300

P , INPUT POWER (dBm)

in

f, FREQUENCY (MHz)

Figure 9. Output Power versus Input Power

Figure 10. Delay versus Frequency

1.E+09

3rd Stage

2nd Stage

1.E+08

1.E+07

1st Stage

1.E+06

1.E+05

1.E+04

90

100 110 120 130 140 150 160 170 180 190

T , JUNCTION TEMPERATURE (°C)

J

2

This above graph displays calculated MTTF in hours x ampere

drain current. Life tests at elevated temperatures have correlated to

better than 10% of the theoretical prediction for metal failure. Divide

2

MTTF factor by I for MTTF in a particular application.

D

Figure 11. MTTF Factor versus Temperature Junction

MW4IC2230NBR1 MW4IC2230GNBR1

RF Device Data

Freescale Semiconductor

7

Z *

in

Z

*

load

f = 2050 MHz

f = 2230 MHz

f = 2050 MHz

f = 2230 MHz

Z = 50 Ω

o

V

DD

= 28 V, I

= 60 mA, I

= 350 mA, I = 265 mA, P = 26 dBm

DQ3 out

DQ1

DQ2

f

Z

in

Z

load

MHz

Ω

2050

2110

2140

42.18 + j1.49

41.06 - j1.30

40.49 - j2.42

8.52 - j0.46

8.58 - j0.20

8.63 - j0.09

2170

2230

40.05 - j3.45

39.29 - j6.31

8.69 - j0.01

8.81 + j0.04

Z

=

Device input impedance as measured from

gate to ground.

in

=

Test circuit impedance as measured

from drain to ground.

load

Output

Matching

Network

Device

Under

Test

Z

in

load

Figure 12. Series Equivalent Input and Load Impedance

MW4IC2230NBR1 MW4IC2230GNBR1

RF Device Data

Freescale Semiconductor

8

NOTES

MW4IC2230NBR1 MW4IC2230GNBR1

RF Device Data

Freescale Semiconductor

9

PACKAGE DIMENSIONS

MW4IC2230NBR1 MW4IC2230GNBR1

RF Device Data

Freescale Semiconductor

10

MW4IC2230NBR1 MW4IC2230GNBR1

RF Device Data

Freescale Semiconductor

11

MW4IC2230NBR1 MW4IC2230GNBR1

RF Device Data

Freescale Semiconductor

12

MW4IC2230NBR1 MW4IC2230GNBR1

RF Device Data

Freescale Semiconductor

13

MW4IC2230NBR1 MW4IC2230GNBR1

RF Device Data

Freescale Semiconductor

14

MW4IC2230NBR1 MW4IC2230GNBR1

RF Device Data

Freescale Semiconductor

15

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MW4IC2230NBR1 MW4IC2230GNBR1

RF Device Data

Freescale Semiconductor

Document Number: MW4IC2230N

1^R6^{ev. 6, 5/2006}