Transys
Electronics
L
I M I T E D
TO-92 Plastic-Encapsulated Transistors
2SA673
TRANSISTOR (PNP)
TO-92
FEATURE
Power dissipation
1. EMITTER
PCM : 0.4 W (Tamb=25℃)
Collector current
2. COLLECTOR
3. BASE
ICM: -0.5 A
1 2 3
Collector-base voltage
V(BR)CBO : -35 V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test conditions
Ic= -10µA , IE=0
MIN
-35
-35
-4
TYP
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
IC=-1 mA , IB=0
V
V
IE=-10µA, IC=0
VCB= -20 V , IE=0
VCE=-3V, IC= -10mA
VCE=-3 V, IC=-500mA
IC= -150mA, IB=-15mA
VCE=-3 V, IC=-10mA
-0.5
320
µA
hFE(1)
*
60
10
DC current gain
hFE(2)
VCEsat
VBE
Collector-emitter saturation voltage
*
-0.6
V
V
Base-emitter voltage
-0.75
*Measured using pulse
CLASSIFICATION OF hFE(1)
Rank
B
C
D
Range
60-120
100-200
160-320
