SILICON PLANAR ZENER DIODES  
					1N5223B to 1N5279B  
					2.7V to 180V  
					DO- 35  
					Glass Axial Package  
					ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)  
					Forward Voltage at IF=200mA  
					V <1.1  
					V
					F
					No Suffix +20% tolerance, Suffix 'A' +10% tolerance, and Suffix 'B' +5% tolerance  
					Max Zener  
					Impedance  
					A & B Suffix only  
					(Note 2)  
					Max Reverse Leakage Current  
					IR at VR  
					Device  
					(Note 1)  
					Nominal  
					Voltage Current  
					VZ @ IZT  
					Test  
					Max Zener  
					Voltage  
					Temp. Coeff.  
					qVz(Note 3)  
					IZT  
					ZZT  
					@
					ZZK @  
					IZT  
					IZK=0.25mA  
					(A&B Suffix only)  
					V
					69  
					76  
					84  
					91  
					99  
					106  
					114  
					122  
					129  
					137  
					mA  
					0.1  
					0.1  
					0.1  
					0.1  
					0.1  
					0.1  
					0.1  
					0.1  
					0.1  
					0.1  
					a VZ (% /ºC)  
					0.099  
					0.099  
					0.11  
					V
					91  
					mA  
					1.4  
					1.3  
					1.1  
					1.0  
					0.95  
					0.90  
					0.85  
					0.80  
					0.74  
					0.68  
					W
					400  
					500  
					750  
					W
					1N5270B  
					1N5271B  
					1N5272B  
					1N5273B  
					1N5274B  
					1N5275B  
					1N5276B  
					1N5277B  
					1N5278B  
					1N5279B  
					2300  
					2600  
					3000  
					4000  
					4500  
					4500  
					5000  
					5500  
					5500  
					6000  
					100  
					110  
					120  
					130  
					140  
					150  
					160  
					170  
					180  
					900  
					0.11  
					0.11  
					0.11  
					0.11  
					0.11  
					0.11  
					0.11  
					1100  
					1300  
					1500  
					1700  
					1900  
					2200  
					NOTE 1:  
					NOTE 2:  
					The electrical characteristics are measured after allowing the device to stabilize for  
					20 seconds when mounted with a 9.525 mm (3/8") minimum lead length from the case.  
					The zener impedance is derived from the 50 Hz AC voltage, which results when AC current  
					having an RMS value equal to 10% of the DC zener current (IZT or IZK) is superimposed  
					on IZT or IZK Zener impedance is measured at two points to insure a sharp knee on the  
					breakdown curve, thereby, eliminating unstable units.  
					Temperature coefficient (qVz).  
					NOTE 3:  
					Test conditions for temperature coefficient are as follows.  
					I =7.5mA, T =25ºC  
					a.  
					ZT  
					j
					T2=125ºC(1N5223A, B thru 1N5242A, B )  
					I =Rated I , T =25ºC  
					b.  
					ZT  
					ZT  
					J
					T2=125ºC(1N5243A, B thru 1N5279A, B )  
					Device to be temperature stabilized with current applied prior to reading brekdown voltage  
					at the specified ambient Rwmerature  
					1N5223B_5279B Rev_2 080605E  
					Data Sheet  
					Page 3 of 5  
					Continental Device India Limited