1N5926B THRU 1N5956B
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE
VOLTAGE - 11 TO 200 Volts
Power - 1.5 Watts
FEATURES
DO-41
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Low profile package
Built-in strain relief
Glass passivated junction
Low inductance
Typical IR less than 1 £gA above 11V
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High temperature soldering :
260 ¢J/10 seconds at terminals
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Plastic package has Underwriters Laboratory
Flammability Classification 94V-O
MECHANICAL DATA
Case: JEDEC DO-41 Molded plastic over passivated junction
Terminals: Solder plated, solderable per MIL-STD-750,
method 2026
Polarity: Color band denotes positive end (cathode)
Standard Packaging: 52mm tape
Weight: 0.012 ounce, 0.3 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ¢J ambient temperature unless otherwise specified.
SYMBOL
PD
VALUE
1.5
UNITS
Watts
¢J
DC Power Dissipation @ TL=75 , Measure at Zero Lead Length(Note 1, Fig. 1)
15
mW/¢J
Derate above 75 ¢J
Peak forward Surge Current 8.3ms single half sine-wave superimposed on rated
load(JEDEC Method) (Note 1,2)
IFSM
10
Amps
Operating Junction and Storage Temperature Range
TJ,TSTG
-55 to +150
¢J
NOTES:
1. Mounted on 5.0mm2(.013mm thick) land areas.
2. Measured on 8.3ms, single half sine-wave or equivalent square wave, duty cycle = 4 pulses
per minute maximum.
3. ZENER VOLTAGE (Vz) MEASUREMENT Nominal zener voltage is measured with the device
function in thermal equilibrium with ambient temperature at 25 ¢J.
4.ZENER IMPEDANCE (Zz) DERIVATION ZZT are measured by dividing the ac voltage drop across
the device by the accurrent applied. The specified limits are for IZ(ac) = 0.1 IZ, (dc) with the ac freqency = 60Hz.