WTE
POWER SEMICONDUCTORS
1N4001G – 1N4007G
1.0A GLASS PASSIVATED RECTIFIER
Features
!
Glass Passivated Die Construction
!
!
!
!
Low Forward Voltage Drop
High Current Capability
High Reliability
A
B
A
High Surge Current Capability
Mechanical Data
C
!
!
Case: Molded Plastic
D
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 0.35 grams (approx.)
Mounting Position: Any
DO-41
Dim
A
Min
25.4
4.06
0.71
2.00
Max
—
!
!
!
!
B
5.21
0.864
2.72
C
Marking: Type Number
D
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
1N
1N
1N
1N
1N
1N
1N
Characteristic
Symbol
Unit
4001G 4002G 4003G 4004G 4005G 4006G 4007G
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
50
35
100
70
200
140
400
600
420
800
560
1000
700
V
RMS Reverse Voltage
VR(RMS)
IO
280
1.0
V
A
Average Rectified Output Current
(Note 1)
@TA = 75°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
IFSM
30
A
Forward Voltage
@IF = 1.0A
VFM
IRM
1.0
V
µA
Peak Reverse Current
At Rated DC Blocking Voltage @TA = 100°C
@TA = 25°C
5.0
50
Typical Junction Capacitance (Note 2)
Cj
8.0
pF
Typical Thermal Resistance Junction to Ambient
(Note 1)
RꢀJA
100
K/W
Operating Temperature Range
Storage Temperature Range
Tj
-65 to +175
-65 to +175
°C
°C
TSTG
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V D.C.
1N4001G – 1N4007G
1 of 3
© 2002 Won-Top Electronics