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DISCRETE SEMICONDUCTORS  
DATA SHEET  
1N5225B to 1N5267B  
Voltage regulator diodes  
1996 Apr 26  
Product specification  
Supersedes data of April 1992  
Philips Semiconductors  
Product specification  
Voltage regulator diodes  
1N5225B to 1N5267B  
FEATURES  
DESCRIPTION  
• Total power dissipation:  
max. 500 mW  
Low-power voltage regulator diodes in hermetically sealed leaded glass  
SOD27 (DO-35) packages.  
• Tolerance series: ±5%  
The series consists of 43 types with nominal working voltages from 3.0 to 75 V.  
• Working voltage range:  
nom. 3.0 to 75 V  
• Non-repetitive peak reverse power  
dissipation: max. 40 W.  
handbook, halfpage  
k
a
MAM239  
APPLICATIONS  
• Low-power voltage stabilizers or  
voltage references.  
The diodes are type branded.  
Fig.1 Simplified outline (SOD27; DO-35) and symbol.  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 134).  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
mA  
IF  
continuous forward current  
non-repetitive peak reverse current  
−
250  
IZSM  
tp = 100 µs; square wave;  
Tj = 25 °C prior to surge  
see Table  
“Per type”  
Ptot  
total power dissipation  
Tamb = 50 °C; lead length max.;  
−
400  
mW  
note 1  
Lead length 8 mm; note 2  
−
−
500  
40  
mW  
W
PZSM  
non-repetitive peak reverse power  
dissipation  
tp = 100 µs; square wave;  
Tj = 25 °C prior to surge; see Fig.3  
tp = 8.3 ms; square wave;  
−
10  
W
Tj ≤ 55 °C prior to surge  
Tstg  
Tj  
storage temperature  
junction temperature  
−65  
−65  
+200  
+200  
°C  
°C  
Notes  
1. Device mounted on a printed circuit-board without metallization pad.  
2. Tie-point temperature ≤ 75 °C.  
ELECTRICAL CHARACTERISTICS  
Table 1  
Tj = 25 °C; unless otherwise specified.  
SYMBOL  
PARAMETER  
forward voltage  
CONDITIONS  
IF = 200 mA; see Fig.4  
MAX.  
UNIT  
VF  
1.1  
V
1996 Apr 26  
2
Per type  
Tj = 25 °C; unless otherwise specified.  
WORKING DIFFERENTIAL TEMP. COEFF.  
TEST  
CURRENT  
IZtest (mA) at f = 1 MHz;  
at VR = 0 V  
DIODE CAP. REVERSE CURRENT  
NON-REPETITIVE PEAK  
REVERSE CURRENT  
IZSM (A)  
VOLTAGE RESISTANCE  
SZ (%/K)  
at IZ  
Cd (pF)  
at REVERSE  
VOLTAGE  
VZ (V)(1)  
at IZtest  
rdif (Ω)  
(2)  
TYPE No.  
at IZtest  
tp = 100 µs; Tamb = 25 °C  
IR (µA)  
VR  
(V)  
NOM.  
MAX.  
MAX.  
MAX.  
MAX.  
MAX.  
1N5225B  
1N5226B  
1N5227B  
1N5228B  
1N5229B  
1N5230B  
1N5231B  
1N5232B  
1N5233B  
1N5234B  
1N5235B  
1N5236B  
1N5237B  
1N5238B  
1N5239B  
1N5240B  
1N5241B  
1N5242B  
1N5243B  
1N5244B  
1N5245B  
1N5246B  
1N5247B  
1N5248B  
1N5249B  
1N5250B  
3.0  
3.3  
3.6  
3.9  
4.3  
4.7  
5.1  
5.6  
6.0  
6.2  
6.8  
7.5  
8.2  
8.7  
9.1  
10  
1600  
1600  
1700  
1900  
2000  
1900  
1600  
1600  
1600  
1000  
750  
−0.075  
−0.070  
−0.065  
−0.060  
±0.055  
±0.030  
±0.030  
+0.038  
+0.038  
+0.045  
+0.050  
+0.058  
+0.062  
+0.065  
+0.068  
+0.075  
+0.076  
+0.077  
+0.079  
+0.082  
+0.082  
+0.083  
+0.084  
+0.085  
+0.086  
+0.086  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
450  
450  
450  
450  
450  
450  
300  
300  
300  
200  
200  
150  
150  
150  
150  
90  
50  
25  
15  
10  
5
1.0  
1.0  
6.0  
6.0  
6.0  
6.0  
6.0  
6.0  
6.0  
6.0  
6.0  
6.0  
6.0  
4.0  
4.0  
3.5  
3.0  
3.0  
2.5  
2.5  
2.5  
2.0  
2.0  
1.5  
1.5  
1.5  
1.5  
1.5  
1.0  
1.0  
1.0  
5
1.5  
5
2.0  
5
3.0  
5
3.5  
5
4.0  
3
5.0  
500  
3
6.0  
500  
3
6.5  
600  
3
6.5  
600  
3
7.0  
600  
3
8.0  
11  
600  
85  
2
8.4  
12  
600  
85  
1
9.1  
13  
600  
9.5  
80  
0.5  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
9.9  
14  
600  
9.0  
8.5  
7.8  
7.4  
7.0  
6.6  
6.2  
80  
10.0  
11.0  
12.0  
13.0  
14.0  
14.0  
15.0  
15  
600  
75  
16  
600  
75  
17  
600  
75  
18  
600  
70  
19  
600  
70  
20  
600  
60  
WORKING DIFFERENTIAL TEMP. COEFF.  
TEST  
CURRENT  
IZtest (mA) at f = 1 MHz;  
at VR = 0 V  
DIODE CAP. REVERSE CURRENT  
NON-REPETITIVE PEAK  
REVERSE CURRENT  
IZSM (A)  
VOLTAGE RESISTANCE  
SZ (%/K)  
at IZ  
Cd (pF)  
at REVERSE  
VOLTAGE  
(2)  
VZ (V)(1)  
at IZtest  
rdif (Ω)  
TYPE No.  
at IZtest  
tp = 100 µs; Tamb = 25 °C  
IR (µA)  
VR  
(V)  
NOM.  
MAX.  
MAX.  
MAX.  
MAX.  
MAX.  
1N5251B  
1N5252B  
1N5253B  
1N5254B  
1N5255B  
1N5256B  
1N5257B  
1N5258B  
1N5259B  
1N5260B  
1N5261B  
1N5262B  
1N5263B  
1N5264B  
1N5265B  
1N5266B  
1N5267B  
22  
24  
25  
27  
28  
30  
33  
36  
39  
43  
47  
51  
56  
60  
62  
68  
75  
600  
600  
+0.087  
+0.088  
+0.089  
+0.090  
+0.091  
+0.091  
+0.092  
+0.093  
+0.094  
+0.095  
+0.095  
+0.096  
+0.096  
+0.097  
+0.097  
+0.097  
+0.098  
5.6  
5.2  
5.0  
4.6  
4.5  
4.2  
3.8  
3.4  
3.2  
3.0  
2.7  
2.5  
2.2  
2.1  
2.0  
1.8  
1.7  
60  
55  
55  
50  
50  
50  
45  
45  
45  
40  
40  
40  
40  
40  
35  
35  
35  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
17.0  
18.0  
19.0  
21.0  
21.0  
23.0  
25.0  
27.0  
30.0  
33.0  
36.0  
39.0  
43.0  
46.0  
47.0  
52.0  
56.0  
1.25  
1.25  
1.25  
1.0  
1.0  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.3  
0.3  
0.25  
0.2  
600  
600  
600  
600  
700  
700  
800  
900  
1000  
1100  
1300  
1400  
1400  
1600  
1700  
Notes  
1. VZ is measured with device at thermal equilibrium while held in clips at 10 mm from body in still air at 25 °C.  
2. For types 1N5225B to 1N5242B the IZ current is 7.5 mA; for 1N5243B and higher IZ = IZtest. SZ values valid between 25 °C and 125 °C.  
Philips Semiconductors  
Product specification  
Voltage regulator diodes  
1N5225B to 1N5267B  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
300  
UNIT  
K/W  
K/W  
Rth j-tp  
Rth j-a  
thermal resistance from junction to tie-point lead length 10 mm  
thermal resistance from junction to ambient lead length max.; see Fig.2 and note 1  
380  
Note  
1. Device mounted on a printed circuit-board without metallization pad.  
1996 Apr 26  
5
Philips Semiconductors  
Product specification  
Voltage regulator diodes  
1N5225B to 1N5267B  
GRAPHICAL DATA  
MBG930  
3
10  
δ = 1  
R
th j-a  
0.75  
0.50  
0.33  
(K/W)  
2
0.20  
10  
0.10  
0.05  
0.02  
0.01  
≤0.001  
10  
t
t
p
p
δ =  
T
T
1
10  
−1  
2
3
4
5
1
10  
10  
10  
10  
10  
t
(ms)  
p
Fig.2 Thermal resistance from junction to ambient as a function of pulse duration.  
MBG801  
MBG803  
3
10  
250  
handbook, halfpage  
handbook, halfpage  
P
ZSM  
(W)  
I
F
(mA)  
2
10  
125  
(1)  
10  
(2)  
1
10  
0
0.5  
−1  
0.75  
V
(V)  
1.0  
1
duration (ms)  
10  
F
(1) Tj = 25 °C (prior to surge).  
(2) Tj = 150 °C (prior to surge).  
Tj = 25 °C.  
Fig.3 Maximum permissible non-repetitive  
peak reverse power dissipation  
versus duration.  
Fig.4 Forward current as a function of forward  
voltage; typical values.  
1996 Apr 26  
6
Philips Semiconductors  
Product specification  
Voltage regulator diodes  
1N5225B to 1N5267B  
PACKAGE OUTLINE  
n
0.56  
max  
1.85  
max  
4.25  
max  
MLA428 - 1  
25.4 min  
25.4 min  
Dimensions in mm.  
Fig.5 SOD27 (DO-35).  
DEFINITIONS  
Data sheet status  
Objective specification  
Preliminary specification  
Product specification  
This data sheet contains target or goal specifications for product development.  
This data sheet contains preliminary data; supplementary data may be published later.  
This data sheet contains final product specifications.  
Limiting values  
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or  
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation  
of the device at these or at any other conditions above those given in the Characteristics sections of the specification  
is not implied. Exposure to limiting values for extended periods may affect device reliability.  
Application information  
Where application information is given, it is advisory and does not form part of the specification.  
LIFE SUPPORT APPLICATIONS  
These products are not designed for use in life support appliances, devices, or systems where malfunction of these  
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for  
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such  
improper use or sale.  
1996 Apr 26  
7