2SK2725--Datasheet/数据表在线中文翻译

2SK2725

Silicon N Channel MOS FET

High Speed Power Switching

REJ03G1023-0400

(Previous: ADE-208-452B)

Rev.4.00

Sep 07, 2005

Features

•

Low on-resistance

High speed switching

Low drive current

No secondary breakdown

Avalanche ratings

Outline

RENESAS Package code: PRSS0003AE-A

(Package name: TO-220C•FM)

1. Gate

2. Drain

3. Source

Rev.4.00 Sep 07, 2005 page 1 of 7

2SK2725

Absolute Maximum Ratings

(Ta = 25°C)

Item

Drain to source voltage

Gate to source voltage

Drain current

Symbol

V_DSS

Ratings

Unit

500

V_GSS

±30

I_D

Drain peak current

I_D(pulse)

Body to drain diode reverse drain current

Avalanche current

I_DR

I_AP

1.38

Avalanche energy

E_AR

°C

Channel dissipation

Pch*²

Channel temperature

Tch

150

Storage temperature

Tstg

–55 to +150

Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %

2. Value at Tc = 25°C

3. Value at Tch = 25°C, Rg ≥ 50 Ω

Electrical Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

—

Max

—

Unit

Test Conditions

I_D= 10 mA, V_GS= 0

Drain to source breakdown voltage

Gate to source breakdown voltage

Gate to source leak current

Zero gate voltage drain current

Gate to source cutoff voltage

V_(BR)DSS

V_(BR)GSS

I_GSS

500

±30

—

I_G= ±100 µA, V_DS= 0

V_GS= ±25 V, V_DS= 0

V_DS= 500 V, V_GS= 0

I_D= 1 mA, V_DS= 10 V*⁴

I_D= 3 A, V_GS= 10 V*⁴

—

±10

µA

I_DSS

—

V_GS(off)

R_DS(on)

2.5

—

3.5

1.6

Static drain to source on state

resistance

1.2

Ω

Forward transfer admittance

Input capacitance

|y_fs|

Ciss

Coss

Crss

2.5

—

4.5

630

250

—

I_D= 3 A, V_DS= 10 V*⁴

V_DS= 10 V, V_GS= 0,

f = 1MHz

Output capacitance

Reverse transfer capacitance

Total gate charge

13.5

3.5

5.0

V_DD= 400 V, V_GS= 10 V,

I_D= 5 A

Gate to source charge

Gate to drain charge

Turn-on delay time

Rise time

Qgs

Qgd

t_d(on)

t_r

V_GS= 10 V, I_D= 3 A,

R_L= 10 Ω

Turn-off delay time

Fall time

t_d(off)

t_f

Body to drain diode forward voltage

V_DF

t_rr

0.95

200

I_D= 5 A, V_GS= 0

Body to drain diode reverse recovery

time

I_F= 5 A, V_GS= 0

diF/ dt = 100 A/µs

Note: 4. Pulse test

Rev.4.00 Sep 07, 2005 page 2 of 7

2SK2725

Main Characteristics

Power vs. Temperature Derating

Maximum Safe Operation Area

100

Operation in

this area is

limited by R

DS(on)

0.5

0.2

0.1

Ta = 25°C

0.05

300

100

150

200

100

1000

Case Temperature T_C(°C)

Drain to Source Voltage V_DS(V)

Typical Output Characteristics

Typical Transfer Characteristics

10 V

8 V

6 V

5.5 V

V_DS= 10 V

Tc = 75°C

Pulse Test

25°C

5 V

–25°C

4.5 V

V_GS= 3.5 V

20 30

4 V

Drain to Source Voltage V_DS(V)

Gate to Source Voltage V_GS(V)

Drain to Source Saturation Voltage

vs. Gate to Source Voltage

Static Drain to Source on State

Resistance vs. Drain Current

Pulse Test

I_D= 5 A

V_GS= 10, 15 V

2 A

1 A

0.5

0.1 0.2

0.5

10 20

Gate to Source Voltage V_GS(V)

Drain Current I_D(A)

Rev.4.00 Sep 07, 2005 page 3 of 7

2SK2725

Static Drain to Source on State

Resistance vs. Temperature

Forward Transfer Admittance

vs. Drain Current

Pulse Test

Tc = –25°C

25°C

I_D= 5 A

75°C

V_GS= 10 V

0.5

2 A

1 A

0.2

0.1

V_DS= 10 V

Pulse Test

0.1 0.2

–40

120

160

0.5

Case Temperature T_C(°C)

Drain Current I_D(A)

Body to Drain Diode Reverse

Recovery Time

Typical Capacitance vs.

Drain to Source Voltage

1000

500

2000

1000

500

Ciss

200

100

200

100

Coss

di / dt = 100 A / µs

V_GS= 0, Ta = 25°C

V_GS= 0

Crss

f = 1 MHz

0.1 0.3

100

Reverse Drain Current I_DR(A)

Drain to Source Voltage V_DS(V)

Dynamic Input Characteristics

Switching Characteristics

1000

500

400

300

200

100

V_DS

300

100

V_DD= 100 V

250 V

400 V

d(off)

V_GS

d(on)

I_D= 5 A

V_DD= 400 V

250 V

100 V

V_GS= 30 V, V_DD= 30 V

PW = 10 µs, duty < 1 %

0.1 0.2

0.5

Gate Charge Qg (nc)

Drain Current I_D(A)

Rev.4.00 Sep 07, 2005 page 4 of 7

2SK2725

Maximum Avalanche Energy vs.

Channel Temperature Derating

Reverse Drain Current vs.

Source to Drain Voltage

2.5

2.0

1.5

1.0

I_AP= 5 A

V_DD= 50 V

duty < 1 %

Rg > 50 Ω

5, 10 V

V_GS= 0, –5 V

0.5

Pulse Test

1.6

0.4

0.8

1.2

2.0

100

125

150

Channel Temperature Tch ( C)

Source to Drain Voltage

SD (V)

Normalized Transient Thermal Impedance vs. Pulse Width

Tc = 25°C

D = 1

0.5

0.3

0.1

ch – c(t) = s (t) • ch – c

ch – c = 4.17°C/W, Tc = 25°C

D =

0.03

0.01

10 µ

100 µ

1 m

10 m

100 m

Pulse Width PW (S)

Avalanche Test Circuit

Avalanche Waveform

V_DSS

E_AR

• L • I_AP

•

V_DSS– V_DD

V_DS

Monitor

I_AP

Monitor

V_(BR)DSS

I_AP

V_DS

V_DD

D. U. T

I_D

Vin

50 Ω

15 V

V_DD

Rev.4.00 Sep 07, 2005 page 5 of 7

2SK2725

Switching Time Test Circuit

Vin Monitor

Switching Time Waveforms

90%

Vout

Monitor

D.U.T.

R_L

10%

Vin

Vout

10%

V_DD

= 30 V

Vin

10 V

50 Ω

90%

d(off)

d(on)

Rev.4.00 Sep 07, 2005 page 6 of 7

2SK2725

Package Dimensions

JEITA Package Code

RENESAS Code

PRSS0003AE-A

Package Name

MASS[Typ.]

1.9g

Unit: mm



TO-220CFM / TO-220CFMV

4.5 0.3

2.7 0.2

10.0 0.3

φ 3.2 0.2

1.0 0.2

1.15 0.2

2.5 0.2

0.6 0.1

2.54

0.7 0.1

Ordering Information

Part Name

Quantity

Shipping Container

2SK2725-E

600 pcs

Box (Tube)

Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of

production before ordering the product.

Rev.4.00 Sep 07, 2005 page 7 of 7

Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan

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