GLASS PASSIVATED JUNCTION
SILICON RECTIFIERS
1N4001G - 1N4007G
DO - 41
PRV : 50 - 1000 Volts
Io : 1.0 Ampere
FEATURES :
1.00 (25.4)
0.107 (2.7)
MIN.
* Glass passivated chip
* High current capability
* High reliability
* Low reverse current
* Low forward voltage drop
0.080 (2.0)
0.205 (5.2)
0.166 (4.2)
1.00 (25.4)
MECHANICAL DATA :
0.034 (0.86)
MIN.
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
0.028 (0.71)
* Polarity : Color band denotes cathode end
* Mounting position : Any
Dimensions in inches and ( millimeters )
* Weight : 0.34 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 C ambient temperature unless otherwise specified.
°
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
1N
1N
1N
1N
1N
1N
1N
BY
RATING
SYMBOL
UNIT
4001G 4002G 4003G 4004G 4005G 4006G 4007G 133G
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
50
35
50
100
70
200
140
200
400
280
400
600
420
600
800
560
800
1000
700
1300
910
V
V
V
Maximum DC Blocking Voltage
100
1000
1300
Maximum Average Forward Current
0.375"(9.5mm) Lead Length Ta = 75 °C
Peak Forward Surge Current
IF(AV)
1.0
30
A
IFSM
A
8.3ms Single half sine wave Superimposed
on rated load (JEDEC Method)
Maximum Forward Voltage at IF = 1.0 Amp.
VF
IR
1.0
5.0
50
8
V
mA
Maximum DC Reverse Current Ta = 25 °C
IR(H)
CJ
at rated DC Blocking Voltage
Ta = 100 °C
mA
Typical Junction Capacitance (Note1)
Typical Thermal Resistance (Note2)
Junction Temperature Range
pF
45
°C/W
°C
RqJA
TJ
- 65 to + 175
- 65 to + 175
Storage Temperature Range
TSTG
°C
Notes : (1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC
(2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted.
Page 1 of 2
Rev. 01 : January 10, 2004
