2SA673/673A
PNP Silicon
Elektronische Bauelemente
Plastic-Encapsulate Transistor
TO-92
4.55±±.2
3.5±±.2
FEATURES
* Low Frequency Amplifier
* Complementary Pair with 2SC1213
and 2SC1213A
* RoHS Compliant Product
* A suffix of "-C" specifies halogen-free
(ꢀ.27 Typ.)
ꢀ: Emitter
2: Base
3: Collector
ꢀ.25±±.2
1
2
3
2.54±±.ꢀ
±.43+–00..0078
±.46±±.ꢀ
MAXIMUM RATINGS (TA=25oC unless otherwise noted)
Symbol
Parameter
Value
-35
-50
-35
-50
-4
Units
2SA673
2SA673A
V
VCBO
Collector-Base Voltage
2SA673
2SA673A
Collector-Emitter Voltage
VCEO
V
VEBO
IC
Emitter-Base Voltage
V
Collector Current -Continuous
Collector Power dissipation
Junction Temperature
-500
400
150
mA
mW
PC
o
C
TJ
o
C
Tstg
Storage Temperature
-55-150
ELECTRICAL CHARACTERISTICS (Tamb=25oCunless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
TYP
MAX
UNIT
-35
-50
-35
-50
IC=-10µA,IE=0
IC=-1mA,IB=0
2SA673
Collector-base breakdown voltage
V(BR)CBO
V
V
2SA673A
2SA673
Collector-emitter breakdown voltage
V(BR)CEO
2SA673A
Emitter-base breakdown voltage
Collector cut-off current
DC current gain
V(BR)EBO IE=-10µA,IC=0
-4
V
ICBO
*hFE(1)
hFE(2)
*VCEsat
VBE
VCB= -20 V, IE=0
-0.5
320
µA
VCE=-3V, IC= -10mA
VCE=-3V, IC=-500mA
IC= -150mA, IB=-15mA
VCE=-3V, IC=-10mA
60
10
Collector-emitter saturation voltage
-0.6
V
V
Base-emitter voltage
* Pulse test.
-0.64
CLASSIFICATION OF hFE(1)
C
B
D
Rank
Range
60-120
200
160-320
100-
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
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