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2SK1835  
Silicon N Channel MOS FET  
REJ03G0978-0400  
Rev.4.00  
Jun 04, 2008  
Application  
High speed power switching  
Features  
•
•
•
•
•
High breakdown voltage (VDSS = 1500 V)  
High speed switching  
Low drive current  
No secondary breakdown  
Suitable for switching regulator  
Outline  
RENESAS Package code: PRSS0004ZE-A  
(Package name: TO-3P)  
D
1. Gate  
2. Drain  
(Flange)  
3. Source  
G
S
1
2
3
REJ03G0978-0400 Rev.4.00 Jun 04, 2008  
Page 1 of 6  
2SK1835  
Absolute Maximum Ratings  
(Ta = 25°C)  
Item  
Drain to source voltage  
Gate to source voltage  
Drain current  
Symbol  
VDSS  
VGSS  
ID  
Ratings  
Unit  
1500  
V
V
±20  
4
A
Note1  
Drain peak current  
ID(pulse)  
10  
A
Body to drain diode reverse drain current  
Channel dissipation  
IDR  
4
125  
A
Pch Note2  
Tch  
W
°C  
°C  
Channel temperature  
150  
Storage temperature  
Tstg  
–55 to +150  
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %  
2. Value at Tc = 25°C  
Electrical Characteristics  
(Ta = 25°C)  
Item  
Symbol  
V(BR)DSS  
IGSS  
Min  
1500  
—
Typ  
—
Max  
—
Unit  
V
Test Conditions  
ID = 10 mA, VGS = 0  
Drain to source breakdown voltage  
Gate to source leak current  
Zero gate voltage drain current  
Gate to source cutoff voltage  
—
±1  
µA  
µA  
V
VGS = ±20 V, VDS = 0  
VDS = 1200 V, VGS = 0  
ID = 1 mA, VDS = 10 V  
ID = 2 A, VGS = 15 V Note 3  
IDSS  
—
—
500  
4.0  
7.0  
VGS(off)  
RDS(on)  
2.0  
—
—
Static drain to source on state  
resistance  
4.6  
Ω
Forward transfer admittance  
Input capacitance  
|yfs|  
Ciss  
Coss  
Crss  
td(on)  
tr  
0.9  
—
—
—
—
—
—
—
—
—
1.4  
1700  
230  
100  
25  
—
—
—
—
—
—
—
—
—
—
S
ID = 2 A, VDS = 20 V Note 3  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
V
VDS = 10 V, VGS = 0,  
f = 1 MHz  
Output capacitance  
Reverse transfer capacitance  
Turn-on delay time  
Rise time  
ID = 2A, VGS = 10 V,  
RL = 15 Ω  
80  
Turn-off delay time  
Fall time  
td(off)  
tf  
230  
80  
Body to drain diode forward voltage  
VDF  
trr  
0.85  
2500  
IF = 4 A, VGS = 0  
Body to drain diode reverse  
recovery time  
ns  
IF = 4 A, VGS = 0,  
diF/dt = 100 A/µs  
Note: 3. Pulse Test  
REJ03G0978-0400 Rev.4.00 Jun 04, 2008  
Page 2 of 6  
2SK1835  
Main Characteristics  
Power vs. Temperature Derating  
Maximum Safe Operation Area  
50  
30  
200  
150  
100  
50  
10  
3
1
0.3  
Operation in this  
area is limited by  
RDS (on)  
0.1  
Ta = 25°C  
0.05  
0
50  
100  
150  
200  
10  
30  
100 300 1000 3000 10000  
Case Temperature TC (°C)  
Drain to Source Voltage VDS (V)  
Typical Transfer Characteristics  
Typical Output Characteristics  
5
4
3
2
1
5
4
3
2
1
10 V  
8 V  
Tc = –25°C  
VDS = 20 V  
Pulse Test  
25°C  
Pulse Test  
6 V  
75°C  
5 V  
VGS = 4 V  
0
10  
20  
30  
40  
50  
0
2
4
6
8
10  
Drain to Source Voltage VDS (V)  
Gate to Source Voltage VGS (V)  
Drain to Source Saturation Voltage  
vs. Gate to Source Voltage  
Static Drain to Source on State  
Resistance vs. Drain Current  
25  
20  
15  
10  
5
50  
Pulse Test  
Pulse Test  
20  
10  
5
VGS = 10 V  
3 A  
15 V  
2 A  
2
1
ID = 1 A  
0.5  
0
4
8
12  
16  
20  
0.2  
0.5  
1
2
5
10  
20  
Gate to Source Voltage VGS (V)  
Drain Current ID (A)  
REJ03G0978-0400 Rev.4.00 Jun 04, 2008  
Page 3 of 6  
2SK1835  
Static Drain to Source on State  
Resistance vs. Temperature  
Forward Transfer Admittance  
vs. Drain Current  
10  
5
25  
20  
15  
10  
5
Pulse Test  
VGS = 15 V  
Pulse Test  
VDS = 20 V  
Tc = –25°C  
25°C  
2
1
ID = 3 A  
75°C  
0.5  
2 A  
1 A  
0.2  
0.1  
0
–40  
0.05 0.1 0.2  
0.5  
1
2
5
0
40  
80  
120  
160  
Case Temperature TC (°C)  
Drain Current ID (A)  
Body to Drain Diode Reverse  
Recovery Time  
Typical Capacitance vs.  
Drain to Source Voltage  
5000  
10000  
1000  
2000  
1000  
500  
Ciss  
µ
di / dt = 100 A /  
VGS = 0, Ta = 25°C  
s
Coss  
100  
10  
200  
100  
5
Crss  
40  
VGS = 0  
f = 1 MHz  
0.1  
0.5  
2
5
10  
0.2  
1
0
50  
10  
20  
30  
Reverse Drain Current IDR (A)  
Drain to Source Voltage VDS (V)  
Dynamic Input Characteristics  
Switching Characteristics  
20  
1000  
800  
600  
400  
200  
1000  
500  
I D = 4 A  
VGS  
16  
12  
8
200  
100  
VDS  
VDD = 600 V  
t
f
400 V  
t
r
50  
250 V  
t
d (on)  
VDD = 600 V  
4
20  
10  
400 V  
250 V  
VGS = 10 V, duty 1 %  
PW = 5 µs  
0
200  
0
40  
80  
120  
160  
0.05 0.1 0.2  
0.5  
1
2
5
Gate Charge Qg (nc)  
Drain Current ID (A)  
REJ03G0978-0400 Rev.4.00 Jun 04, 2008  
Page 4 of 6  
2SK1835  
Reverse Drain Current vs.  
Source to Drain Voltage  
5
4
3
2
Pulse Test  
1
0
VGS = 15 V  
0,–5 V  
1.2  
Source to Drain Voltage VSD (V)  
0
0.4  
0.8  
1.6  
2.0  
Normalized Transient Thermal Impedance vs. Pulse Width  
3
Tc = 25°C  
D = 1  
0.5  
1.0  
0.3  
0.1  
0.2  
0.1  
θch – c(t) = γs(t) • θch – c  
0.05  
0.02  
θch – c = 1.0°C / W, Tc = 25°C  
PW  
D =  
T
PDM  
0.03  
0.01  
0.01  
PW  
1
T
1 m  
µ
100 m  
10 m  
10 µ  
100  
10  
Pulse Width PW (S)  
Switching Time Test Circuit  
Waveforms  
Vin Monitor  
90 %  
Vout Monitor  
Vin  
10 %  
10 %  
D.U.T  
R L  
10 %  
Vout  
Vin  
50 Ω  
10 V  
.
.
VDD 30 V  
90 %  
t
d (off)  
90 %  
=
t
t
f
t
d (on)  
r
REJ03G0978-0400 Rev.4.00 Jun 04, 2008  
Page 5 of 6  
2SK1835  
Package Dimensions  
Package Name  
TO-3P  
JEITA Package Code  
SC-65  
RENESAS Code  
PRSS0004ZE-A  
Previous Code  
MASS[Typ.]  
5.0g  
TO-3P / TO-3PV  
Unit: mm  
4.8 0.2  
15.6 0.3  
φ
3.2 0.2  
1.5  
1.6  
2.0  
1.4 Max  
2.8  
1.0 0.2  
0.6 0.2  
0.9  
1.0  
3.6  
5.45 0.5  
5.45 0.5  
Ordering Information  
Part Name  
Quantity  
Shipping Container  
2SK1835-E  
360 pcs  
Box (Tube)  
REJ03G0978-0400 Rev.4.00 Jun 04, 2008  
Page 6 of 6  
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan  
Notes:  
1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes  
warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property  
rights or any other rights of Renesas or any third party with respect to the information in this document.  
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but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples.  
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destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws  
and regulations, and procedures required by such laws and regulations.  
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please confirm the latest product information with a Renesas sales office. Also, please pay regular and careful attention to additional and different information to be  
disclosed by Renesas such as that disclosed through our website. (http://www.renesas.com )  
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result of errors or omissions in the information included in this document.  
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(2) surgical implantations  
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http://www.renesas.com  
Refer to "http://www.renesas.com/en/network" for the latest and detailed information.  
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Colophon .7.2