CHONGQING PINGYANG ELECTRONICS CO.,LTD.
1N4001G THRU 1N4007G
TECHNICAL SPECIFICATIONS OF SILICON RECTIFIER
VOLTAGE：50-1000V
CURRENT：1.0A
FEATURES
·High reliability
DO-41
·Low leakage
·Low forward voltage drop
·High current capability
1.0(25.4)
MIN.
.034(0.9)
.028(0.7)
DIA.
DIA.
.205(5.2)
.166(4.2)
.107(2.7)
.080(2.0)
MECHANICAL DATA
·Case: Molded plastic
·Epoxy: UL94V-0 rate flame retardant
·Lead: MIL-STD- 202E, Method 208 guaranteed
·Polarity:Color band denotes cathode end
·Mounting position: Any
1.0(25.4)
MIN.
Dimensions in inches and (millimeters)
·Weight: 0.33 grams
MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz,resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
1N4001G1N4002G 1N4003G1N4004G1N4005G 1N4006G1N4007Gunits
VRRM
VRMS
VDC
50
35
50
100
70
200
140
200
400
280
400
600
420
600
800
560
800
1000
700
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
V
V
V
100
1000
Maximum DC Blocking Voltage
Maximum Average Forward rectified Current
at TA=75°C
Io
1.0
A
Peak Forward Surge Current 8.3ms single half
30
A
V
sine-wave superimposed on rate load (JEDEC IFSM
method)
Maximum Instantaneous forward Voltage at 1.0A
DC
VF
1.1
5.0
@ TA=25°C
Maximum DC Reverse Current
at Rated DC Blocking Voltage
500
@ TA=100°C
IR
µA
Maximum Full Load Reverse Current Average
30
Full Cycle .375”(9.5mm) lead length at TL=75°C
CJ
15
50
pF
Typical Junction Capacitance (Note)
Typical Thermal Resistance
RθJA
°C/W
Notes: Measured at 1MHz and applied reverse voltage of 4.0 volts
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