1N4001GP
THRU
1N4007GP
Shanghai Lunsure Electronic
Technology Co.,Ltd
Tel:0086-21-37185008
Fax:0086-21-57152769
Features
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Glass Passivated Junction
Low Current Leakage
1 Amp Glass
PassivatedRectifier
50 - 1000 Volts
Metalurgically Bonded Construction
Low Cost
Maximum Ratings
DO-41
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Operating Temperature: -55°C to +150°C
Storage Temperature: -55°C to +150°C
Maximum Thermal Resistance; 20°C/W Junction To Lead
Device
Marking
Maximum
Recurrent
Peak
Reverse
Voltage
Maximum Maximum
Catalog
Number
RMS
DC
Voltage
Blocking
Voltage
D
1N4001GP
1N4002GP
1N4003GP
1N4004GP
1N4005GP
1N4006GP
1N4007GP
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50V
100V
200V
400V
600V
800V
1000V
35V
70V
50V
100V
200V
400V
600V
800V
1000V
A
Cathode
Mark
140V
280V
420V
560V
700V
B
D
C
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
Current
IF(AV)
1.0A
TA = 75°C
Peak Forward Surge
Current
IFSM
30A
8.3ms, half sine
DIMENSIONS
Maximum
INCHES
MIN
.166
.080
.028
MM
MIN
4.10
2.00
.70
Instantaneous
Forward Voltage
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
VF
IR
1.1V
IFM = 1.0A;
TJ = 25°C*
DIM
A
B
C
D
MAX
.205
.107
.034
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MAX
5.20
2.70
.90
NOTE
1.000
25.40
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5.0mA
50mA
TJ = 25°C
TJ = 125°C
Typical Junction
Capacitance
CJ
15pF
Measured at
1.0MHz, VR=4.0V
*Pulse test: Pulse width 300 msec, Duty cycle 2%
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