06N80C3--Datasheet/数据表在线中文翻译

SPD06N80C3

Cool MOS™ Power Transistor

Feature

• New revolutionary high voltage technology

V

800

0.9

6

V

Ω

A

DS

R

DS(on)

I

D

• Worldwide best R

in TO252

DS(on)

PG-TO252

• Ultra low gate charge

• Periodic avalanche rated

• Extreme dv/dt rated

Type

SPD06N80C3

Package

PG-TO252

Ordering Code

Q67040-S4352

Marking

06N80C3

Maximum Ratings, at T = 25°C, unless otherwise specified

C

Parameter

Symbol

Value

Unit

A

Continuous drain current

I

D

T = 25 °C

6

C

T = 100 °C

3.8

C

18

Pulsed drain current, t limited by T

I

D puls

p

jmax

230

mJ

Avalanche energy, single pulse

E

AS

I =1.2A, V =50V

D

DD

1)

E

0.2

Avalanche energy, repetitive t limited by T

AR

jmax

I =6A, V =50V

D

DD

6

A

Avalanche current, repetitive t limited by T

I

AR

jmax

Gate source voltage

V

W

°C

±20

83

GS

P

Power dissipation, T = 25°C

tot

C

Operating and storage temperature

T , T

-55... +150

j

stg

Rev. 2.4

Page 1

2008-04-11

SPD06N80C3

Maximum Ratings

Parameter

Symbol

Value

Unit

Drain Source voltage slope

dv/dt

50

V/ns

V

= 640 V, I = 6 A, T = 125 °C

DS

D j

Thermal Characteristics

Parameter

Symbol

Values

Unit

min.

typ. max.

R

-

1.5 K/W

62

Thermal resistance, junction - case

Thermal resistance, junction - ambient, leaded

SMD version, device on PCB:

@ min. footprint

thJC

R

thJA

R

thJA

-

75

50

260 °C

2

2)

@ 6 cm cooling area

Soldering temperature, reflow soldering, MSL3

T

sold

3)

1.6 mm (0.063 in.) from case for 10s

Electrical Characteristics

Parameter

Symbol

Conditions

Values

Unit

min.

800

-

typ. max.

V

=0V, I =0.25mA

-

V

Drain-source breakdown voltage

Drain-Source avalanche

breakdown voltage

(BR)DSS GS

D

V

=0V, I =6A

870

-

V

GS

D

(BR)DS

I =250µΑ, V =V

2.1

3

3.9

Gate threshold voltage

Zero gate voltage drain current

V

I

D

GS DS

GS(th)

V

=800V, V =0V,

DS GS

µA

DSS

T =25°C,

-

0.5

-

10

100

100 nA

j

T =150°C

j

V

=20V, V =0V

Gate-source leakage current

I

GS

DS

GSS

=10V, I =3.8A,

Drain-source on-state resistance R

Ω

D

DS(on)

T =25°C

-

0.78

2.1

0.7

0.9

-

j

T =150°C

j

R

f=1MHz, open Drain

Gate input resistance

G

Rev. 2.4

Page 2

2008-04-11

SPD06N80C3

Electrical Characteristics , at T = 25 °C, unless otherwise specified

j

Parameter

Symbol

Conditions

Values

typ. max.

Unit

S

min.

Transconductance

g

V

≥2*I *R ,

DS DS(on)max

-

4

-

fs

D

I =3.8A

D

Input capacitance

C

V

=0V, V =25V,

GS DS

-

785

390

20

-

pF

iss

f=1MHz

Output capacitance

oss

rss

Reverse transfer capacitance

4)

V

=0V,

GS

Effective output capacitance,

energy related

Effective output capacitance,

time related

22

pF

ns

o(er)

=0V to 480V

DS

5)

C

-

42

-

o(tr)

Turn-on delay time

t

V

=400V, V =0/10V,

GS

-

25

15

65

8

-

75

11

d(on)

DD

I =6A, R =15Ω,

Rise time

t

D

G

r

T =125°C

Turn-off delay time

Fall time

t

j

d(off)

t

f

Gate Charge Characteristics

Gate to source charge

Gate to drain charge

Q

V

=640V, I =6A

-

3.3

14

27

-

35

nC

V

gs

gd

g

DD

D

V

=640V, I =6A,

Gate charge total

DD

D

=0 to 10V

GS

V

=640V, I =6A

-

6

-

Gate plateau voltage

V_(plateau)

DD

D

1

2

Repetitve avalanche causes additional power losses that can be calculated as P =E *f.

AR

AV

Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical without blown air.

3

4

Soldering temperature for TO-263: 220°C, reflow

C

is a fixed capacitance that gives the same stored energy as C

while V is rising from 0 to 80% V

.

oss

DS

o(er)

o(tr)

DSS

5

C

is a fixed capacitance that gives the same charging time as C

while V is rising from 0 to 80% V

.

oss

DS

DSS

Rev. 2.4

Page 3

2008-04-11

SPD06N80C3

Electrical Characteristics, at T = 25 °C, unless otherwise specified

j

Parameter

Symbol

Conditions

Values

typ. max.

Unit

min.

T =25°C

-

6

A

Inverse diode continuous

forward current

I

C

S

Inverse diode direct current,

I

-

18

SM

pulsed

V

=0V, I =I

F S

-

1

520

5

18

400

1.2

V

Inverse diode forward voltage

Reverse recovery time

V

GS

SD

t

V =400V, I =I ,

-

ns

µC

A

rr

R

F

S

di /dt=100A/µs

Reverse recovery charge

Peak reverse recovery current

Q

I

F

rr

rrm

A/µs

Peak rate of fall of reverse

recovery current

di /dt

rr

Typical Transient Thermal Characteristics

Symbol

Value

typ.

Unit

Symbol

Value

typ.

Unit

Thermal resistance

Thermal capacitance

0.024

0.086

0.309

0.317

0.112

K/W

0.0001172

0.000447

0.0006303

0.001828

0.004786

0.046

R

R_th5

R

C

Ws/K

th1

th2

th3

th4

th1

th2

th3

th4

th5

th6

External Heatsink

T_j

R_th1

R_th,n

T_case

P_tot(t)

C_th1

C_th2

C_th,n

T_amb

Rev. 2.4

Page 4

2008-04-11

SPD06N80C3

1 Power dissipation

= f (T )

2 Safe operating area

I = f ( V

P

)

DS

tot

C

D

parameter : D = 0 , T =25°C

C

10 ²

SPD06N80C3

100

W

A

80

70

60

50

40

30

20

10

0

10 ¹

10 ⁰

tp = 0.001 ms

tp = 0.01 ms

tp = 0.1 ms

10 ^-1

tp = 1 ms

DC

10 ^-2

0

20

40

60

80 100 120

160

10 ⁰

10 ¹

10 ²

10 ³

DS

°C

T

V

C

3 Transient thermal impedance

= f (t )

4 Typ. output characteristic

I = f (V ); T =25°C

Z

thJC

p

D

DS

j

parameter: D = t /T

parameter: t = 10 µs, V

p

GS

10 ¹

20

20V

10V

A

K/W

8V

7V

16

14

12

10

8

10 ⁰

10 ^-1

10 ^-2

10 ^-3

D = 0.5

D = 0.2

D = 0.1

D = 0.05

D = 0.02

D = 0.01

6V

5V

6

single pulse

4

2

0

10 ^-7

10 ^-6

10 ^-5

10 ^-4

10 ^-3

10 ^-1

0

5

10

15

20

30

DS

s

t

V

p

Rev. 2.4

Page 5

2008-04-11

SPD06N80C3

5 Typ. output characteristic

I = f (V ); T =150°C

6 Typ. drain-source on resistance

=f(I )

R

D

DS

j

DS(on)

D

parameter: t = 10 µs, V

parameter: T =150°C, V

p

GS

j

GS

5

11

20V

10V

8V

A

Ω

9

8

7

6

5

4

3

2

1

0

4V

5V

6V

7V

6V

4

3.5

3

5.5V

4.5V

5.5V

5V

2.5

2

7V

8V

10V

20V

4.5V

4V

1.5

1

0

5

10

15

20

30

DS

0

2

4

6

8

11

V

A

I

V

D

7 Drain-source on-state resistance

= f (T )

8 Typ. transfer characteristics

R

I = f ( V ); V ≥ 2 x I x R

DS(on)

j

D GS DS D DS(on)max

parameter : I = 3.8 A, V = 10 V

parameter: t = 10 µs

D

GS

p

SPD06N80C3

20

5.5

Ω

A

25°C

4.5

4

16

14

12

10

8

3.5

3

2.5

2

150°C

6

1.5

1

98%

typ

4

2

0.5

0

°C

-60

-20

20

60

100

180

0

2

4

6

8

10 12 14 16

20

V

T

GS

j

Rev. 2.4

Page 6

2008-04-11

SPD06N80C3

9 Typ. gate charge

= f (Q

10 Forward characteristics of body diode

V

)

I = f (V )

GS

Gate

F SD

parameter: I = 6 A pulsed

parameter: T , tp = 10 µs

D

j

10 ²

SPD06N80C3

16

V

A

12

0.2 V_{DS max}

10 ¹

0.8 V_{DS max}

10

8

6

4

2

0

10 ⁰

T_j= 25 °C typ

T_j= 150 °C typ

T_j= 25 °C (98%)

T_j= 150 °C (98%)

10 ^-1

nC

0

5

10 15 20 25 30 35 40

50

0

0.4

0.8

1.2

1.6

2

2.4

3

V

Q

V

Gate

SD

11 Avalanche SOA

= f (t )

12 Avalanche energy

E = f (T )

AS

I

AR

j

par.: T ≤ 150 °C

par.: I = 1.2 A, V = 50 V

j

D

DD

250

6

mJ

A

200

175

150

125

100

75

4

3

2

1

T

= 25°C

J(Start)

50

T

= 125°C

25

J(Start)

0

10 ^-310 ^-210 ^-110 ⁰10 ¹10 ²

10 ⁴

25

50

75

100

150

µs

AR

°C

t

T

j

Rev. 2.4

Page 7

2008-04-11

SPD06N80C3

13 Drain-source breakdown voltage

= f (T )

14 Avalanche power losses

P = f (f )

AR

V

(BR)DSS

j

parameter: E =0.2mJ

AR

SPD06N80C3

200

980

V

W

940

920

900

880

860

840

820

800

780

760

740

720

160

140

120

100

80

60

40

20

0

10 ⁴

-60

-20

20

60

100

180

10 ⁵

10 ⁶

°C

Hz

T

f

j

15 Typ. capacitances

C = f (V )

16 Typ. C

stored energy

oss

E

=f(V )

DS

oss

DS

parameter: V =0V, f=1 MHz

GS

10 ⁴

7

pF

µJ

C_iss

10 ³

5

4

3

2

1

0

10 ²

C_oss

10 ¹

C_rss

10 ⁰

0

100 200 300 400 500 600

800

DS

0

100 200 300 400 500 600

800

DS

V

Rev. 2.4

Page 8

2008-04-11

SPD06N80C3

Definition of diodes switching characteristics

Rev. 2.4

Page 9

2008-04-11

SPD06N80C3

PG-TO252-3-1, PG-TO252-3-11, PG-TO252-3-21 (D-PAK)

Rev. 2.4

Page 10

2008-04-11

SPD06N80C3

Rev. 2.4

Page 11

2008-04-11