Data Sheet
250 mW EPITAXIAL
PLANAR DIODES
Mechanical Dimensions
Description
JEDEC
D0-35
.120
.200
1.00 Min.
.060
.090
.018
.022
Features
n INDUSTRY STANDARD D0-35
n PLANAR PROCESS
n 250 mW POWER DISSIPATION
PACKAGE
n MEETS UL SPECIFICATION 94V-0
1N914
Units
1N914
Maximum Ratings
80
Peak Reverse Voltage...VRM
Volts
Volts
RMS Reverse Voltage...VR(rms)
80
Average Forward Rectified Current...IO
Non-Repetitive Peak Forward Surge Current...IFSM
Power Dissipation...PD
mAmps
mAmps
mW
............................................. 100 ...............................................
............................................. 300 ...............................................
............................................. 250 ...............................................
......................................... -25 to 85 ..........................................
......................................... -55 to 125 ..........................................
Operating Temperature Range...TJ
Storage Temperature Range...TSTRG
°C
°C
Electrical Characteristics
Maximum Forward Voltage...VF
@ IF = 100 mA
............................................. 1.2 ............................................... Volts
Maximum DC Reverse Current...IR @ VR = 70v
Maximum Frequency ...f
µAmps
............................................. 0.1 ...............................................
............................................. 100 ............................................... MHz
Maximum Diode Capacitance, VR = 6V, f = 1MHz...CD
Maximum Reverse Recovery Time...tRR
............................................. 3.5 ...............................................
............................................. 4.0 ...............................................
pF
ns
Device Under Test
.01 uF
Output
0.1 IR
PVV = 100nS
Trr
IF
5K Ohms
IR
50 Ohms
RG = 50 Ohms
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