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2SK2225  
Silicon N Channel MOS FET  
REJ03G1005-0200  
(Previous: ADE-208-140)  
Rev.2.00  
Sep 07, 2005  
Application  
High speed power switching  
Features  
•
•
•
•
•
High breakdown voltage (VDSS = 1500 V)  
High speed switching  
Low drive current  
No Secondary breakdown  
Suitable for switching regulator, DC-DC converter  
Outline  
RENESAS Package code: PRSS0003ZA-A  
(Package name: TO-3PFM)  
D
1. Gate  
G
2. Drain  
3. Source  
S
1
2
3
Rev.2.00 Sep 07, 2005 page 1 of 6  
2SK2225  
Absolute Maximum Ratings  
(Ta = 25°C)  
Item  
Drain to source voltage  
Gate to source voltage  
Drain current  
Symbol  
VDSS  
Ratings  
Unit  
V
1500  
VGSS  
±20  
V
ID  
2
A
1
Drain peak current  
ID(pulse)  
IDR  
Pch*2  
*
7
A
Body to drain diode reverse drain current  
Channel dissipation  
2
50  
A
W
°C  
°C  
Channel temperature  
Tch  
150  
Storage temperature  
Tstg  
–55 to +150  
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %  
2. Value at Tc = 25°C  
Electrical Characteristics  
(Ta = 25°C)  
Item  
Symbol  
V(BR)DSS  
IGSS  
Min  
1500  
—
Typ  
—
—
—
—
9
Max  
—
Unit  
Test conditions  
Drain to source breakdown voltage  
Gate to source leak current  
Zero gate voltage drain current  
Gate to source cutoff voltage  
V
µA  
µA  
V
ID = 10 mA, VGS = 0  
VGS = ±20 V, VDS = 0  
VDS =1200 V, VGS = 0  
ID = 1 mA, VDS = 10 V  
ID = 1 A, VGS = 15 V*3  
±1  
IDSS  
—
500  
4.0  
12  
VGS(off)  
RDS(on)  
2.0  
—
Static drain to source on state  
resistance  
Ω
Forward transfer admittance  
Input capacitance  
|yfs|  
Ciss  
Coss  
Crss  
td(on)  
tr  
0.45  
—
—
—
—
—
—
—
—
—
0.75  
990  
125  
60  
—
—
—
—
—
—
—
—
—
—
S
ID = 1 A, VDS = 20 V*3  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
V
VDS = 10 V, VGS = 0,  
f = 1 MHz  
Output capacitance  
Reverse transfer capacitance  
Turn-on delay time  
Rise time  
17  
ID = 1 A, VGS = 10 V,  
RL = 30 Ω  
50  
Turn-off delay time  
Fall time  
td(off)  
tf  
150  
50  
Body to drain diode forward voltage  
VDF  
trr  
0.9  
1750  
IF = 2 A, VGS = 0  
Body to drain diode reverse  
recovery time  
ns  
IF = 20 A, VGS = 0,  
diF / dt = 100 A / µs  
Note: 3. Pulse Test  
Rev.2.00 Sep 07, 2005 page 2 of 6  
2SK2225  
Main Characteristics  
Power vs. Temperature Derating  
Maximum Safe Operation Area  
10  
80  
60  
40  
20  
3
1
0.3  
0.1  
Operation in  
this area is  
limited by R  
DS(on)  
0.03  
0.01  
Ta = 25°C  
0
10  
30  
100 300 1000 3000 10000  
50  
100  
150  
200  
Case Temperature TC (°C)  
Drain to Source Voltage VDS (V)  
Typical Output Characteristics  
15 V  
Typical Transfer Characteristics  
5
4
3
2
1
2.0  
1.6  
1.2  
0.8  
0.4  
8 V  
10 V  
Pulse Test  
VDS = 25 V  
Pulse Test  
7 V  
6 V  
Tc = 75°C  
25°C  
5 V  
–25°C  
VGS = 4 V  
0
0
20  
40  
60  
80  
100  
2
4
6
8
10  
Drain to Source Voltage VDS (V)  
Gate to Source Voltage VGS (V)  
Drain to Source Saturation Voltage  
vs. Gate to Source Voltage  
Static Drain to Source on State  
Resistance vs. Drain Current  
50  
50  
40  
30  
20  
10  
Pulse Test  
ID = 3 A  
20  
10  
5
VGS = 10 V  
15 V  
2 A  
2
1
1 A  
Pulse Test  
0.5 A  
0.5  
0
4
8
12  
16  
20  
0.1 0.2  
0.5  
1
2
5
10  
Gate to Source Voltage VGS (V)  
Drain Current ID (A)  
Rev.2.00 Sep 07, 2005 page 3 of 6  
2SK2225  
Static Drain to Source on State  
Resistance vs. Temperature  
Forward Transfer Admittance  
vs. Drain Current  
10  
5
20  
16  
12  
8
VDS = 25 V  
Pulse Test  
ID = 2 A  
2
1
Tc = –25°C  
25°C  
0.5 A, 1 A  
75°C  
0.5  
4
VGS = 15 V  
Pulse Test  
0.2  
0.1  
0
–40  
0
40  
80  
120  
160  
0.05 0.1 0.2  
0.5  
1
2
5
Case Temperature TC (°C)  
Drain Current ID (A)  
Body to Drain Diode Reverse  
Recovery Time  
Typical Capacitance vs.  
Drain to Source Voltage  
5000  
10000  
VGS = 0  
f = 1 MHz  
2000  
1000  
Ciss  
1000  
100  
10  
500  
200  
di / dt = 100 A / µs, Ta = 25°C  
VGS = 0, Pulse Test  
Coss  
Crss  
100  
50  
0.05 0.1 0.2  
0.5  
1
2
5
0
10  
20  
30  
40  
50  
Reverse Drain Current IDR (A)  
Drain to Source Voltage VDS (V)  
Dynamic Input Characteristics  
Switching Characteristics  
1000  
500  
1000  
800  
600  
400  
200  
20  
VGS = 10 V  
PW = 2 µs  
duty < 1 %  
VDD = 250 V  
400 V  
600 V  
16  
12  
8
t
d(off)  
VGS  
VDS  
200  
100  
50  
t
f
t
r
VDD = 250 V  
400 V  
600 V  
4
0
t
d(on)  
ID = 2.5 A  
20  
10  
0
20  
40  
60  
80  
100  
0.05 0.1 0.2  
0.5  
1
2
5
Gate Charge Qg (nc)  
Drain Current ID (A)  
Rev.2.00 Sep 07, 2005 page 4 of 6  
2SK2225  
Reverse Drain Current vs.  
Source to Drain Voltage  
5
4
3
2
1
Pulse Test  
10 V, 15 V  
VGS = 0, –5 V  
0
0.4  
Source to Drain Voltage VSD (V)  
Normalized Transient Thermal Impedance vs. Pulse Width  
0.8  
1.2  
1.6  
2.0  
3
1
Tc = 25°C  
D = 1  
0.5  
0.3  
0.1  
θ
θ
γ
θ
ch – c(t) = s (t) • ch – c  
ch – c = 2.50°C/W, Tc = 25°C  
PW  
T
P
DM  
D =  
0.03  
0.01  
PW  
T
10 µ  
100 µ  
1 m  
10 m  
100 m  
1
10  
Pulse Width PW (s)  
Switching Time Test Circuit  
Waveforms  
90%  
Vout  
Monitor  
Vin Monitor  
D.U.T.  
10%  
10%  
Vin  
RL  
Vout  
10%  
VDD  
= 30 V  
Vin  
10 V  
50 Ω  
90%  
90%  
t
t
d(off)  
d(on)  
t
f
t
r
Rev.2.00 Sep 07, 2005 page 5 of 6  
2SK2225  
Package Dimensions  
JEITA Package Code  
SC-93  
RENESAS Code  
PRSS0003ZA-A  
Package Name  
MASS[Typ.]  
5.2g  
TO-3PFM / TO-3PFMV  
Unit: mm  
5.5 0.3  
15.6 0.3  
+ 0.4  
– 0.2  
φ3.2  
3.2 0.3  
4.0 0.3  
2.6  
1.6  
0.86  
0.86  
+ 0.2  
– 0.1  
+ 0.2  
0.9  
– 0.1  
0.66  
5.45 0.5  
5.45 0.5  
Ordering Information  
Part Name  
Quantity  
Shipping Container  
2SK2225-E  
360 pcs  
Box (Tube)  
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of  
production before ordering the product.  
Rev.2.00 Sep 07, 2005 page 6 of 6  
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan  
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