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2SK1317  
Silicon N Channel MOS FET  
REJ03G0929-0200  
(Previous: ADE-208-1268)  
Rev.2.00  
Sep 07, 2005  
Application  
High speed power switching  
Features  
•
•
•
•
•
High breakdown voltage VDSS = 1500 V  
High speed switching  
Low drive current  
No secondary breakdown  
Suitable for switching regulator, DC-DC converter and motor driver  
Outline  
RENESAS Package code: PRSS0004ZE-A  
(Package name: TO-3P)  
D
1. Gate  
2. Drain  
(Flange)  
3. Source  
G
S
1
2
3
Rev.2.00 Sep 07, 2005 page 1 of 6  
2SK1317  
Absolute Maximum Ratings  
(Ta = 25°C)  
Unit  
Item  
Drain to source voltage  
Gate to source voltage  
Drain current  
Symbol  
VDSS  
VGSS  
ID  
Ratings  
1500  
V
V
±20  
2.5  
A
*1  
Drain peak current  
ID(pulse)  
7
2.5  
A
Body to drain diode reverse drain current  
Channel dissipation  
IDR  
Pch*2  
Tch  
A
100  
W
°C  
°C  
Channel temperature  
150  
Storage temperature  
Tstg  
–55 to +150  
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%  
2. Value at TC = 25°C  
Electrical Characteristics  
(Ta = 25°C)  
Item  
Symbol  
V(BR)DSS  
IGSS  
Min  
Typ  
—
—
—
—
9
Max  
Unit  
V
Test conditions  
ID = 10 mA, VGS = 0  
Drain to source breakdown voltage  
Gate to source leak current  
Zero gate voltage drain current  
Gate to source cutoff voltage  
1500  
—
—
±1  
µA  
µA  
V
VGS = ±20 V, VDS = 0  
VDS = 1200 V, VGS = 0  
ID = 1 mA, VDS = 10 V  
ID = 2 A, VGS = 15 V *3  
IDSS  
—
500  
4.0  
12  
VGS(off)  
RDS(on)  
2.0  
—
Static drain to source on state  
resistance  
Ω
Forward transfer admittance  
Input capacitance  
|yfs|  
Ciss  
Coss  
Crss  
td(on)  
tr  
0.45  
—
—
—
—
—
—
—
—
—
0.75  
990  
125  
60  
—
—
—
—
—
—
—
—
—
—
S
ID = 1 A, VDS = 20 V *3  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
V
VDS = 10 V, VGS = 0,  
f = 1 MHz  
Output capacitance  
Reverse transfer capacitance  
Turn-on delay time  
Rise time  
17  
ID = 2 A, VGS = 10 V,  
RL = 15 Ω  
70  
Turn-off delay time  
Fall time  
td(off)  
tf  
110  
60  
Body to drain diode forward voltage  
VDF  
trr  
0.9  
1750  
IF = 2 A, VGS = 0  
Body to drain diode reverse recovery  
time  
ns  
IF = 2 A, VGS = 0,  
diF/dt = 100 A/µs  
Note: 3. Pulse test  
Rev.2.00 Sep 07, 2005 page 2 of 6  
2SK1317  
Main Characteristics  
Power vs. Temperature Derating  
Maximum Safe Operation Area  
120  
80  
10  
3
1.0  
0.3  
0.1  
40  
ea  
Operation in this ar  
is limited by RDS (on)  
0.03  
0.01  
Ta = 25  
30  
°
C
0
50  
100  
150  
10  
100  
300  
1,000 3,000 10,000  
Case Temperature TC (°C)  
Drain to Source Voltage VDS (V)  
Typical Transfer Characteristics  
Typical Output Characteristics  
2.0  
1.6  
1.2  
0.8  
0.4  
5
4
3
2
1
15 V  
10 V  
Pulse Test  
8 V  
VDS = 20 V  
Pulse Test  
7 V  
6 V  
75°C  
TC = 25°C  
5 V  
–25°C  
VGS = 4 V  
0
2
6
8
10  
4
0
20  
40  
60  
80  
100  
Drain to Source Voltage VDS (V)  
Gate to Source Voltage VGS (V)  
Drain to Source Saturation Voltage  
vs. Gate to Source Voltage  
Static Drain to Source on State  
Resistance vs. Drain Current  
50  
40  
30  
20  
10  
50  
20  
Pulse Test  
ID = 3 A  
VGS = 10 V  
15 V  
10  
5
2 A  
2
1.0  
0.5  
1 A  
Pulse Test  
0.5 A  
0
4
8
12  
16  
20  
0.1 0.2  
0.5 1.0  
2
5
10  
Gate to Source Voltage VGS (V)  
Drain Current ID (A)  
Rev.2.00 Sep 07, 2005 page 3 of 6  
2SK1317  
Static Drain to Source on State  
Resistance vs. Temperature  
Forward Transfer Admittance  
vs. Drain Current  
20  
16  
12  
8
10  
5
ID = 2 A  
VGS = 15 V  
Pulse Test  
VDS = 20 V  
Pulse Test  
0.5 A, 1 A  
2
1.0  
0.5  
–25°C  
Ta = 25°C  
75°C  
4
0.2  
0.1  
0
–40  
0.05 0.1 0.2  
0.5 1.0  
2
5
0
40  
80  
120  
160  
Case Temperature TC (°C)  
Drain Current ID (A)  
Body to Drain Diode Reverse  
Recovery Time  
Typical Capacitance vs.  
Drain to Source Voltage  
10,000  
1,000  
5,000  
VGS = 0  
f = 1 MHz  
2,000  
1,000  
500  
Ciss  
100  
10  
di/dt = 100 A/µs, Ta = 25°C  
VGS = 0  
Pulse Test  
Coss  
Crss  
200  
100  
50  
0.05 0.1 0.2  
0.5 1.0  
2
5
0
10  
20  
30  
40  
50  
Reverse Drain Current IDR (A)  
Drain to Source Voltage VDS (V)  
Dynamic Input Characteristics  
VDD = 250 V  
Switching Characteristics  
1,000  
800  
600  
400  
200  
20  
1,000  
500  
•
VGS = 10 V VDD = 30 V  
•
PW = 2 µs, duty < 1%  
16  
400 V  
600 V  
td (off)  
200  
100  
50  
VGS  
12  
8
VDS  
tf  
tr  
VDD = 600 V  
400 V  
250 V  
4
0
td (on)  
20  
10  
ID = 2.5 A  
80 100  
0
20  
40  
60  
0.05 0.1 0.2  
0.5 1.0  
2
5
Drain Current ID (A)  
Gate Charge Qg (nc)  
Rev.2.00 Sep 07, 2005 page 4 of 6  
2SK1317  
Reverse Drain Current vs.  
Source to Drain Voltage  
5
4
3
2
1
0
Pulse Test  
10 V, 15 V  
0.4  
VGS = 0, –5 V  
0.8 1.2  
0
1.6  
2.0  
Source to Drain Voltage VSD (V)  
Normalized Transient Thermal Impedance vs. Pulse Width  
3
TC = 25°C  
D = 1  
0.5  
1.0  
0.3  
0.1  
0.2  
θch–c (t) = γS (t) • θch–c  
θch–c = 1.25°C/W, TC = 25°C  
PDM  
PW  
D =  
0.03  
0.01  
T
PW  
ot Pulse  
T
1 Sh  
10 µ  
100 µ  
1 m  
10 m  
100 m  
1
10  
Pulse Width PW (S)  
Switching Time Test Circuit  
Vin Monitor  
Waveforms  
90%  
Vout Monitor  
Vin  
10%  
10%  
D.U.T  
10%  
RL  
Vout  
50 Ω  
90%  
tr  
90%  
td (off)  
VDD  
= 30 V  
Vin  
10 V  
td (on)  
tf  
Rev.2.00 Sep 07, 2005 page 5 of 6  
2SK1317  
Package Dimensions  
JEITA Package Code  
SC-65  
RENESAS Code  
Package Name  
TO-3P / TO-3PV  
MASS[Typ.]  
5.0g  
PRSS0004ZE-A  
Unit: mm  
4.8 0.2  
15.6 0.3  
3.2 0.2  
φ
1.5  
1.6  
2.0  
1.4 Max  
2.8  
1.0 0.2  
0.6 0.2  
0.9  
1.0  
3.6  
5.45 0.5  
5.45 0.5  
Ordering Information  
Part Name  
Quantity  
Shipping Container  
2SK1317-E  
360 pcs  
Box (Tube)  
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of  
production before ordering the product.  
Rev.2.00 Sep 07, 2005 page 6 of 6  
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan  
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