2SK2553--Datasheet/数据表在线中文翻译

2SK2553(L), 2SK2553(S)

Silicon N Channel MOS FET

High Speed Power Switching

REJ03G1015-1000

(Previous: ADE-208-357H)

Rev.10.00

Sep 07, 2005

Application

High speed power switching

Features

•

Low on-resistance

R_DS(on)= 7 mΩ typ.

High speed switching

4 V gate drive device can be driven from 5 V source

Outline

RENESAS Package code: PRSS0004AE-A

(Package name: LDPAK(L))

RENESAS Package code: PRSS0004AE-B

(Package name: LDPAK(S)-(1))

D

4

1. Gate

G

2. Drain

3. Source

4. Drain

1

2

3

1

2

3

S

Rev.10.00 Sep 07, 2005 page 1 of 8

2SK2553(L), 2SK2553(S)

Absolute Maximum Ratings

(Ta = 25°C)

Item

Drain to source voltage

Gate to source voltage

Drain current

Symbol

V_DSS

V_GSS

I_D

Ratings

Unit

60

±20

V

50

A

Note 1

Drain peak current

I_D(pulse)

I_DR

200

A

Body to drain diode reverse drain current

Avalanche current

50

A

Note 3

I_AP

E_AR

Pch

45

A

Note 3

Note 2

Avalanche energy

174

mJ

W

°C

Channel dissipation

75

Channel temperature

Tch

Tstg

150

Storage temperature

–55 to +150

Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %

2. Value at Tc = 25°C

3. Value at Tch = 25°C, Rg ≥ 50 Ω

Electrical Characteristics

(Ta = 25°C)

Item

Symbol

Min

60

±20

—

Typ

Max

—

Unit

V

Test Conditions

I_D= 10 mA, V_GS= 0

Drain to source breakdown voltage

Gate to source breakdown voltage

Gate to source leak current

Zero gate voltage drain current

Gate to source cutoff voltage

V_(BR)DSS

V_(BR)GSS

I_GSS

—

V

I_G= ±100 µA, V_DS= 0

V_GS= ±16 V, V_DS= 0

V_DS= 60 V, V_GS= 0

—

±10

10

2.0

10

16

—

µA

V

I_DSS

—

V_GS(off)

R_DS(on)

1.0

—

I_D= 1 mA, V_DS= 10 V

I_D= 25 A, V_GS= 10 V^{Note 4}

I_D= 25 A, V_GS= 4 V^{Note 4}

I_D= 25 A, V_DS= 10 V^{Note 4}

Static drain to source on state

resistance

7

mΩ

S

—

10

Forward transfer admittance

Input capacitance

|y_fs|

Ciss

Coss

Crss

t_d(on)

t_r

35

—

55

3550

1760

500

35

—

pF

ns

V

V_DS= 10 V, V_GS= 0,

f = 1 MHz

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

—

I_D= 25 A, V_GS= 10 V,

R_L= 1.2 Ω

—

230

470

360

0.85

135

—

Turn-off delay time

Fall time

t_d(off)

t_f

—

Body to drain diode forward voltage

V_DF

t_rr

—

I_F= 50 A, V_GS= 0

Body to drain diode reverse

recovery time

—

ns

I_F= 50 A, V_GS= 0

di_F/ dt = 50 A / µs

Note: 4. Pulse Test

Rev.10.00 Sep 07, 2005 page 2 of 8

2SK2553(L), 2SK2553(S)

Main Characteristics

Power vs. Temperature Derating

Maximum Safe Operation Area

500

100

75

200

100

50

20

50

10

5

Operation in

this area is

limited by R

DS(on)

25

2

1

Ta = 25°C

0.5

0

3

30

50

100

150

200

0.1 0.3

1

10

100

Case Temperature T_C(°C)

Drain to Source Voltage V_DS(V)

Typical Output Characteristics

Typical Transfer Characteristics

10 V

6 V

5 V

4 V

100

80

60

40

20

100

80

Pulse Test

V_DS= 10 V

Pulse Test

3.5 V

60

3 V

40

25°C

Tc = 75°C

20

–25°C

V_GS= 2.5 V

0

1

2

3

4

5

2

4

6

8

10

Drain to Source Voltage V_DS(V)

Gate to Source Voltage V_GS(V)

Drain to Source Saturation Voltage

vs. Gate to Source Voltage

Static Drain to Source on State

Resistance vs. Drain Current

0.5

1.0

0.8

0.6

0.4

0.2

Pulse Test

0.2

0.1

0.05

0.02

0.01

V_GS= 4 V

10 V

I_D= 50 A

0.005

0.002

0.001

20 A

10 A

0.0005

6

0

2

4

8

10

1

10

30

100 300 1000

3

Gate to Source Voltage V_GS(V)

Drain Current I_D(A)

Rev.10.00 Sep 07, 2005 page 3 of 8

2SK2553(L), 2SK2553(S)

Static Drain to Source on State

Resistance vs. Temperature

Forward Transfer Admittance

vs. Drain Current

500

0.04

0.032

0.024

0.016

0.008

V_DS= 10 V

Pulse Test

200

100

50

Tc = –25°C

I_D= 50 A

20

10

5

25°C

10, 20 A

V_GS= 4 V

75°C

2

1

10, 20, 50 A

120 160

10 V

40

0

0.5

0.1 0.3

–40

0

80

1

3

10

30

100

Case Temperature T_C(°C)

Drain Current I_D(A)

Body to Drain Diode Reverse

Recovery Time

Typical Capacitance vs.

Drain to Source Voltage

10000

5000

2000

1000

500

Ciss

2000

1000

500

200

100

50

Coss

Crss

20

10

5

200

100

di / dt = 50 A / µs

V_GS= 0, Ta = 25°C

V_GS= 0

f = 1 MHz

0.1 0.3

1

3

10

30

100

0

10

20

30

40

50

Reverse Drain Current I_DR(A)

Drain to Source Voltage V_DS(V)

Dynamic Input Characteristics

I_D= 50 A

Switching Characteristics

100

80

60

40

20

16

12

8

5000

2000

1000

t

d(off)

V_DD= 10 V

25 V

50 V

500

t

f

V_DS

200

100

50

t

r

V_GS

t

d(on)

20

10

5

4

0

V_DD= 50 V

25 V

10 V

V_GS= 10 V, V_DD= 30 V

PW = 5 µs, duty < 1 %

0

0.1 0.3

1

3

10

30

100

40

80

120

160

200

Gate Charge Qg (nc)

Drain Current I_D(A)

Rev.10.00 Sep 07, 2005 page 4 of 8

2SK2553(L), 2SK2553(S)

Reverse Drain Current vs.

Source to Drain Voltage

Maximum Avalanche Energy vs.

Channel Temperature Derating

100

80

60

40

20

200

160

120

80

Pulse Test

I_AP= 45 A

V_DD= 25 V

duty < 0.1 %

Rg > 50 Ω

10 V

5 V

V_GS= 0, –5 V

40

0

0.4

0.8

1.2

1.6

2.0

25

50

75

100

125

150

Channel Temperature Tch (°C)

Source to Drain Voltage V_SD(V)

Normalized Transient Thermal Impedance vs. Pulse Width

3

1

Tc = 25°C

D = 1

0.5

0.3

0.1

θch – c(t) = γs (t) • θch – c

θch – c = 1.67°C/W, Tc = 25°C

PW

T

P_DM

D =

0.03

0.01

PW

T

10 µ

100 µ

1 m

10 m

100 m

1

10

Pulse Width PW (S)

Avalanche Test Circuit

Avalanche Waveform

V_DSS

L

V_DS

Monitor

1

2

E_AR

=

• L • I_AP

•

V_DSS– V_DD

2

I_AP

Monitor

V_(BR)DSS

I_AP

Rg

V_DD

D. U. T

V_DS

I_D

Vin

15 V

50 Ω

V_DD

0

Rev.10.00 Sep 07, 2005 page 5 of 8

2SK2553(L), 2SK2553(S)

Switching Time Test Circuit

Waveform

Vout

Monitor

90%

Vin Monitor

D.U.T.

10%

Vin

R_L

Vout

10%

V_DD

= 30 V

Vin

10 V

50 Ω

90%

t

f

d(off)

d(on)

t

r

Rev.10.00 Sep 07, 2005 page 6 of 8

2SK2553(L), 2SK2553(S)

Package Dimensions

JEITA Package Code

RENESAS Code

Package Name

MASS[Typ.]

1.40g

Unit: mm



PRSS0004AE-A

LDPAK(L) / LDPAK(L)V

4.44 0.2

1.3 0.15

10.2 0.3

1.3 0.2

1.37 0.2

2.49 0.2

+ 0.2

– 0.1

0.86

0.76 0.1

2.54 0.5

0.4 0.1

2.54 0.5

JEITA Package Code

SC-83

RENESAS Code

PRSS0004AE-B

Package Name

MASS[Typ.]

1.30g

Unit: mm

LDPAK(S)-(1) / LDPAK(S)-(1)V

4.44 0.2

7.8

6.6

10.2 0.3

1.3 0.15

2.49 0.2

+ 0.2

0.1

– 0.1

2.2

1.37 0.2

0.4 0.1

+ 0.2

– 0.1

1.3 0.2

2.54 0.5

0.86

2.54 0.5

Rev.10.00 Sep 07, 2005 page 7 of 8

2SK2553(L), 2SK2553(S)

Ordering Information

Part Name

Quantity

Shipping Container

2SK2553L-E

500 pcs

1000 pcs

Box (Sack)

Taping

2SK2553STL-E

Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of

production before ordering the product.

Rev.10.00 Sep 07, 2005 page 8 of 8

Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan

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