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BCR08AM-12A  
Triac  
Low Power Use  
REJ03G0343-0200  
Rev.2.00  
Nov 30, 2007  
Features  
•
•
•
•
IT (RMS) : 0.8 A  
VDRM : 600 V  
I
RGTI, IRGT III : 5 mA  
Planar Passivation Type  
Outline  
RENESAS Package code: PRSS0003EA-A  
(Package name: TO-92)  
2
1
1. T Terminal  
1
2. T Terminal  
2
3. Gate Terminal  
3
1
3
2
Applications  
Electric fan, air cleaner, and other general purpose control applications  
Maximum Ratings  
Voltage class  
Parameter  
Symbol  
Unit  
12  
Repetitive peak off-state voltageNote1  
Non-repetitive peak off-state voltageNote1  
VDRM  
VDSM  
600  
720  
V
V
REJ03G0343-0200 Rev.2.00 Nov 30, 2007  
Page 1 of 6  
BCR08AM-12A  
Parameter  
Symbol  
Ratings  
Unit  
Conditions  
RMS on-state current  
Surge on-state current  
I2t for fusing  
IT (RMS)  
0.8  
A
Commercial frequency, sine full wave  
360° conduction, Tc = 56°C  
ITSM  
I2t  
8
A
60Hz sinewave 1 full cycle, peak value,  
non-repetitive  
0.26  
A2s  
Value corresponding to 1 cycle of half  
wave 60Hz, surge on-state current  
Peak gate power dissipation  
Average gate power dissipation  
Peak gate voltage  
PGM  
PG (AV)  
VGM  
IGM  
1
W
W
V
0.1  
6
Peak gate current  
0.5  
A
Junction temperature  
Storage temperature  
Mass  
Tj  
– 40 to +125  
– 40 to +125  
0.23  
°C  
°C  
g
Tstg  
—
Typical value  
Notes: 1. Gate open.  
Electrical Characteristics  
Parameter  
Repetitive peak off-state current  
On-state voltage  
Symbol  
IDRM  
Min.  
—
Typ.  
Max.  
1.0  
Unit  
mA  
V
Test conditions  
—
—
Tj = 125°C, VDRM applied  
VTM  
—
2.0  
Tc = 25°C, ITM = 1.2 A,  
Instantaneous measurement  
Gate trigger voltageNote2  
Gate trigger currentNote2  
ΙΙ  
ΙΙΙ  
ΙΙ  
VRGT  
—
—
—
—
—
—
—
—
—
2.0  
2.0  
5
V
V
Tj = 25°C, VD = 6 V, RL = 6 Ω,  
RG = 330 Ω  
Ι
VRGT  
ΙΙΙ  
IRGT  
—
mA  
mA  
V
Tj = 25°C, VD = 6 V, RL = 6 Ω,  
RG = 330 Ω  
Ι
ΙΙΙ  
IRGT  
—
5
ΙΙΙ  
Gate non-trigger voltage  
Thermal resistance  
VGD  
0.1  
—
—
60  
—
Tj = 125°C, VD = 1/2 VDRM  
Junction to caseNote3  
Tj = 125°C  
Rth (j-c)  
(dv/dt)c  
°C/W  
V/µs  
Critical-rate of rise of off-state  
commutating voltageNote4  
0.5  
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.  
3. Case temperature is measured at the T2 terminal 1.5 mm away from the molded case.  
4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.  
Commutating voltage and current waveforms  
Test conditions  
(inductive load)  
1. Junction temperature  
Time  
Supply Voltage  
Tj = 125°C  
(di/dt)c  
2. Rate of decay of on-state commutating current  
(di/dt)c = – 0.4 A/ms  
Time  
Time  
Main Current  
Main Voltage  
3. Peak off-state voltage  
VD = 400 V  
(dv/dt)c  
V
D
REJ03G0343-0200 Rev.2.00 Nov 30, 2007  
Page 2 of 6  
BCR08AM-12A  
Performance Curves  
Maximum On-State Characteristics  
Rated Surge On-State Current  
101  
7
10  
9
8
7
6
5
4
3
2
1
0
Tj = 25°C  
5
3
2
100  
7
5
3
2
10–1  
100  
2
3 4 5 7 101  
2
3 4 5 7 102  
1.0 1.5  
2.0 2.5  
3.0  
3.5  
4.0  
On-State Voltage (V)  
Conduction Time (Cycles at 60Hz)  
Gate Trigger Current vs.  
Junction Temperature  
Gate Characteristics ( II and III)  
103  
3
2
Typical Example  
7
5
V
GM  
= 6V  
101  
7
P
GM  
= 1W  
5
3
2
P
=
3
2
G(AV)  
0.1W  
V
GT  
I
= 0.5A  
GM  
100  
7
102  
7
5
5
3
2
I , I  
RGT I RGT III  
3
2
10–1  
7
V
GD  
= 0.1V  
5
3
101  
3
5 7 101 2 3 5 710 2 2 3 5 7 103  
Gate Current (mA)  
–
60 –40 –20 0 20 40 60 80 100120140  
Junction Temperature (°C)  
Maximum Transient Thermal  
Impedance Characteristics  
(Junction to case, Junction to ambient)  
102 2 3 5 7 103 2 3 5 7104 2 3 5 7105  
Gate Trigger Voltage vs.  
Junction Temperature  
3
103  
Typical Example  
2
7
5
Junction to ambient  
102  
3
2
7
5
Junction to case  
102  
3
2
7
5
101  
7
3
2
5
101  
–
3
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102  
0
60 –40 –20  
20 40 60 80 100120140  
Junction Temperature (°C)  
Conduction Time (Cycles at 60Hz)  
REJ03G0343-0200 Rev.2.00 Nov 30, 2007  
Page 3 of 6  
BCR08AM-12A  
Allowable Case Temperature vs.  
RMS On-State Current  
Maximum On-State Power Dissipation  
2.0  
1.8  
160  
140  
120  
100  
Curves apply regardless  
of conduction angle  
1.6  
1.4  
1.2  
360° Conduction  
Resistive,  
inductive loads  
1.0  
0.8  
0.6  
0.4  
0.2  
0
80  
60  
40  
20  
0
360° Conduction  
Resistive,  
inductive loads  
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4  
RMS On-State Current (A)  
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0  
RMS On-State Current (A)  
Repetitive Peak Off-State Current vs.  
Junction Temperature  
Allowable Ambient Temperature vs.  
RMS On-State Current  
105  
7
5
160  
140  
120  
100  
80  
Natural convection  
No fins  
Curves apply regardless  
of conduction angle  
Resistive, inductive loads  
Typical Example  
3
2
104  
7
5
3
2
60  
103  
7
5
40  
360° Conduction  
Resistive,  
inductive loads  
3
2
20  
102  
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0  
0
60 –40 –20  
20 40 60 80 100 120 140  
–
Junction Temperature (°C)  
RMS On-State Current (A)  
Holding Current vs.  
Junction Temperature  
Latching Current vs.  
Junction Temperature  
102  
7
5
103  
7
Typical Example  
Distribution  
5
–
+
3
2
T
, G  
Typical Example  
2
3
2
101  
7
5
102  
7
3
2
5
100  
7
3
2
5
3
2
–
–
, G  
Typical Example  
T
2
101  
10–1  
0
40  
80  
120  
160  
–
60  
–
40  
–
20  
0
20 40 60 80 100 120 140  
–
40  
Junction Temperature (°C)  
Junction Temperature (°C)  
REJ03G0343-0200 Rev.2.00 Nov 30, 2007  
Page 4 of 6  
BCR08AM-12A  
Breakover Voltage vs.  
Junction Temperature  
Breakover Voltage vs.  
Rate of Rise of Off-State Voltage  
160  
140  
120  
100  
160  
140  
120  
Typical Example  
Tj = 125°C  
Typical Example  
I Quadrant  
100  
80  
60  
40  
20  
0
80  
60  
40  
20  
0
III Quadrant  
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103  
–
60  
–
40  
–
20  
0
20 40 60 80 100 120 140  
Junction Temperature (°C)  
Rate of Rise of Off-State Voltage (V/µs)  
Gate Trigger Current vs.  
Gate Current Pulse Width  
Commutation Characteristics  
101  
103  
Typical Example  
Typical Example  
Tj = 125°C  
7
5
7
5
I = 1A  
T
τ = 500µs  
I
RGT I  
3
2
3
2
V
D
= 200V  
I
RGT III  
102  
100  
7
III Quadrant  
I Quadrant  
7
5
5
Minimum  
Characteristics  
Value  
3
2
3
2
10–1  
101  
10–1  
2
3
5 7 100  
2
3
5 7 101  
100  
2
3 4 5 7 101  
2
3 4 5 7 102  
Rate of Decay of On-State  
Commutating Current (A/ms)  
Gate Current Pulse Width (µs)  
Gate Trigger Characteristics Test Circuits  
6Ω  
6Ω  
A
A
6V  
6V  
330Ω  
330Ω  
V
V
Test Procedure II  
Test Procedure III  
REJ03G0343-0200 Rev.2.00 Nov 30, 2007  
Page 5 of 6  
BCR08AM-12A  
Package Dimensions  
Package Name  
TO-92*  
JEITA Package Code  
SC-43A  
RENESAS Code  
PRSS0003EA-A  
Previous Code  
MASS[Typ.]  
0.23g  
Unit: mm  
φ5.0Max  
4.4  
1.251.25  
Circumscribed circle φ0.7  
Order Code  
Standard order  
code example  
Lead form  
Standard packing  
Quantity  
Standard order code  
Straight type  
Lead form  
Form A8  
Vinyl sack  
Vinyl sack  
Taping  
500 Type name  
BCR08AM-12A  
500 Type name – Lead forming code  
2000 Type name – TB  
BCR08AM-12A-A6  
BCR08AM-12A-TB  
Note : Please confirm the specification about the shipping in detail.  
REJ03G0343-0200 Rev.2.00 Nov 30, 2007  
Page 6 of 6  
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan  
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Colophon .7.2