BCR08AS--Datasheet/数据表在线中文翻译

To all our customers

Regarding the change of names mentioned in the document, such as Mitsubishi

Electric and Mitsubishi XX, to Renesas Technology Corp.

The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas

Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)

Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi

Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names

have in fact all been changed to Renesas Technology Corp. Thank you for your understanding.

Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been

made to the contents of the document, and these changes do not constitute any alteration to the

contents of the document itself.

Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices

and power devices.

Renesas Technology Corp.

Customer Support Dept.

April 1, 2003

MITSUBISHI SEMICONDUCTOR TRIAC

BCR08AS

LOW POWER USE

NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

Dimensions

in mm

BCR08AS

OUTLINE DRAWING

4.4±0.1

1.6±0.2

1.5±0.1

1

2

3

0.5±0.07

0.4±0.07

+0.03

–0.05

0.4

1.5±0.11.5±0.1

(Back side)

2

T

1

2

TERMINAL

1

2

3

1

GATE TERMINAL

• IT (RMS) .....................................................................0.8A

• VDRM ....................................................................... 600V

• IFGT !, IRGT !, IRGT # ..............................................5mA

• IFGT # .....................................................................10mA

SOT-89

APPLICATION

Hybrid IC, solid state relay,

control of household equipment such as electric fan · washing machine,

other general purpose control applications

MAXIMUM RATINGS

Voltage class

Symbol

Parameter

Unit

12 (marked “BF”)

1

VDRM

VDSM

Repetitive peak off-state voltage

600

720

V

1

Non-repetitive peak off-state voltage

Symbol

Parameter

RMS on-state current

Surge on-state current

Conditions

Ratings

Unit

A

3

IT (RMS)

ITSM

Commercial frequency, sine full wave 360° conduction, Ta=40°C

0.8

8

60Hz sinewave 1 full cycle, peak value, non-repetitive

A

Value corresponding to 1 cycle of half wave 60Hz, surge on-state

current

2

I

t

I

t for fusing

0.26

A s

PGM

PG (AV)

VGM

IGM

Tj

Peak gate power dissipation

Average gate power dissipation

Peak gate voltage

1

W

V

0.1

6

1

Peak gate current

A

Junction temperature

Storage temperature

Weight

–40 ~ +125

48

°C

mg

Tstg

—

Typical value

1. Gate open.

Mar. 2002

MITSUBISHI SEMICONDUCTOR TRIAC

BCR08AS

LOW POWER USE

NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

ELECTRICAL CHARACTERISTICS

Limits

Unit

Symbol

Parameter

Test conditions

Tj=125°C, VDRM applied

Min.

—

0.1

—

Typ.

—

Max.

1.0

2.0

5

mA

V

IDRM

Repetitive peak off-state current

On-state voltage

VTM

Tc=25°C, ITM=1.2A, Instantaneous measurement

!

@

#

$

!

@

#

$

V

VFGT !

VRGT !

VRGT #

VFGT #

IFGT !

IRGT !

IRGT #

IFGT #

VGD

V

2

Gate trigger voltage

Tj=25°C, VD=6V, RL=6Ω, RG=330Ω

V

mA

V

5

2

Gate trigger current

Tj=25°C, VD=6V, RL=6Ω, RG=330Ω

Tj=125°C, VD=1/2VDRM

5

10

—

Gate non-trigger voltage

Thermal resistance

3

65

°C/W

Rth (j-a)

Junction to case

4

Critical-rate of rise of off-state

commutating voltage

0.5

—

V/µs

(dv/dt)c

Tj=125°C

2. Measurement using the gate trigger characteristics measurement circuit.

3. Mounted on 25mm × 25mm × t0.7mm ceramic plate with solder.

4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.

Commutating voltage and current waveforms

(inductive load)

Test conditions

SUPPLY

VOLTAGE

TIME

1. Junction temperature

Tj=125°C

(di/dt)c

MAIN CURRENT

2. Rate of decay of on-state commutating current

(di/dt)c=–0.4A/ms

MAIN

VOLTAGE

3. Peak off-state voltage

VD=400V

TIME

VD

(dv/dt)c

PERFORMANCE CURVES

MAXIMUM ON-STATE CHARACTERISTICS

RATED SURGE ON-STATE CURRENT

10¹

7

5

4

10

8

3

2

6

Tj = 125°C

10⁰

7

5

4

T

j

= 25°C

3

2

10^–1

0

1

2

3

4

5

10⁰

2

3 4 5 7 10¹

2

3 4 5 7 10²

ON-STATE VOLTAGE (V)

CONDUCTION TIME

(CYCLES AT 60Hz)

Mar. 2002

MITSUBISHI SEMICONDUCTOR TRIAC

BCR08AS

LOW POWER USE

NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

GATE TRIGGER CURRENT VS.

JUNCTION TEMPERATURE

10³

GATE CHARACTERISTICS

10²

7

TYPICAL EXAMPLE

7

5

4

3

2

V

GM = 10V

I

FGT III

FGT I IRGT III IRGT I

P

GM = 1W

I

10¹

7

5

3

2

P

G(AV)

= 0.1W

10²

7

V

GT

10⁰

7

5

4

3

I

GM = 1A

I

FGT I

,

5

RGT I, IRGT III

3

2

I

FGT III

VGD = 0.2V

10^–1

10¹

10⁰2 3 5 7 10¹2 3 5 7 10²2 3 5 7 10³

–60–40–20 0 20 40 60 80 100120140

GATE CURRENT (mA)

JUNCTION TEMPERATURE (°C)

MAXIMUM TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

10²2 3 5 7 10³2 3 5 7 10⁴2 3 5 7 10⁵

GATE TRIGGER VOLTAGE VS.

JUNCTION TEMPERATURE

10³

7

5

TYPICAL EXAMPLE

7

5

4

3

2

10²

7

5

JUNCTION TO AMBIENT

JUNCTION TO CASE

2

V

FGT I

V

FGT III

10²

7

5

4

3

2

V

RGT I VRGT III

10¹

7

5

3

2

10¹

10⁰

10^–12 3 5 7 10⁰2 3 5 7 10¹2 3 5 7 10²

–60–40–20 0 20 40 60 80 100120140

JUNCTION TEMPERATURE (°C)

CONDUCTION TIME

(CYCLES AT 60Hz)

MAXIMUM ON-STATE POWER

DISSIPATION

ALLOWABLE CASE TEMPERATURE

VS. RMS ON-STATE CURRENT

2.0

160

CURVES APPLY REGARDLESS

OF CONDUCTION ANGLE

NATURAL CONVECTION

RESISTIVE,

140

120

100

80

1.6

1.2

0.8

0.4

0

INDUCTIVE

LOADS

360°

CONDUCTION

RESISTIVE,

INDUCTIVE

LOADS

60

40

20

0

0.4

0.8

1.2

1.6

2.0

0

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

RMS ON-STATE CURRENT (A)

Mar. 2002

MITSUBISHI SEMICONDUCTOR TRIAC

BCR08AS

LOW POWER USE

NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

REPETITIVE PEAK OFF-STATE

CURRENT VS. JUNCTION

TEMPERATURE

HOLDING CURRENT VS.

JUNCTION TEMPERATURE

10³

10⁵

7

TYPICAL EXAMPLE

7

5

3

2

3

2

10⁴

7

5

3

2

10²

7

10³

7

5

3

2

5

3

2

10²

10¹

–60–40–20 0 20 40 60 80 100120140

JUNCTION TEMPERATURE (°C)

LACHING CURRENT VS.

JUNCTION TEMPERATURE

BREAKOVER VOLTAGE VS.

JUNCTION TEMPERATURE

10²

160

7

5

TYPICAL EXAMPLE

DISTRIBUTION

T⁺

TYPICAL EXAMPLE

140

120

100

80

2

, G^–

3

2

10¹

7

5

3

2

60

10⁰

7

40

5

T⁺

T^–

2

, G⁺

, G^–

, G⁺

3

2

TYPICAL

EXAMPLE

20

2

10^–1

0

–40

0

40

80

120

160

–60–40–20 0 20 40 60 80 100120140

JUNCTION TEMPERATURE (°C)

BREAKOVER VOLTAGE VS.

RATE OF RISE OF

OFF-STATE VOLTAGE

COMMUTATION CHARACTERISTICS

10¹

160

140

120

100

80

TYPICAL EXAMPLE

TYPICAL

EXAMPLE

7

5

Tj = 125°C

T

j

= 125°C

I

T

= 1A

3

2

τ = 500µs

= 200V

I QUADRANT

V

D

f = 3Hz

10⁰

7

5

III QUADRANT

60

III QUADRANT

40

MINIMUM

CHARAC-

TERISTICS

VALUE

3

2

I QUADRANT

20

10^–1

0

10^–1

2

3

5

7 10⁰

2

3

5

7 10¹

10⁰2 3 5 7 10¹2 3 5 7 10²2 3 5 7 10³

RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)

RATE OF DECAY OF ON-STATE

COMMUTATING CURRENT (A/ms)

Mar. 2002

MITSUBISHI SEMICONDUCTOR TRIAC

BCR08AS

LOW POWER USE

NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

GATE TRIGGER CURRENT VS.

GATE CURRENT PULSE WIDTH

GATE TRIGGER CHARACTERISTICS

TEST CIRCUITS

10³

7

TYPICAL EXAMPLE

6Ω

5

4

3

A

2

6V

RG

V

10²

7

5

4

TEST PROCEDURE 1 TEST PROCEDURE 2

6Ω 6Ω

I

RGT I

I

RGT III

FGT III

IFGT I

3

2

10¹

A

6V

10⁰

2

3 4 5 7 10¹

2

3 4 5 7 10²

RG

V

GATE CURRENT PULSE WIDTH (µs)

TEST PROCEDURE 3 TEST PROCEDURE 4

Mar. 2002