转到网站首页
转为中文步骤：
1、请用电脑端360浏览器打开本页地址，如您电脑未安装360浏览器，请点这里下载;
2、点击360浏览器右上角的翻译插件，如右图红圈中所示:
3、点击所弹出窗口里的右下角的按钮 “翻译当前网页”;
4、弹窗提示翻译完毕后关闭弹窗即可；
To all our customers  
Regarding the change of names mentioned in the document, such as Mitsubishi  
Electric and Mitsubishi XX, to Renesas Technology Corp.  
The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas  
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog  
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)  
Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi  
Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names  
have in fact all been changed to Renesas Technology Corp. Thank you for your understanding.  
Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been  
made to the contents of the document, and these changes do not constitute any alteration to the  
contents of the document itself.  
Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices  
and power devices.  
Renesas Technology Corp.  
Customer Support Dept.  
April 1, 2003  
MITSUBISHI SEMICONDUCTOR TRIAC  
BCR10CS  
MEDIUM POWER USE  
Refer to the page 6 as to the product guaranteed  
maximum junction temperature 150°C  
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE  
Dimensions  
BCR10CS  
OUTLINE DRAWING  
in mm  
4
10.5 MAX  
4.5  
1.3  
TYPE  
NAME  
+0.3  
–0  
0
VOLTAGE  
CLASS  
1
5
0.5  
0.8  
1
2 3  
Measurement  
point of case  
temperature  
2 4  
T
T
1
TERMINAL  
TERMINAL  
1
2
3
4
2
• IT (RMS) ...................................................................... 10A  
• VDRM ....................................................................... 600V  
• IFGT !, IRGT !, IRGT # ............................................20mA  
GATE TERMINAL  
TERMINAL  
3
1
T
2
TO-220S  
APPLICATION  
Contactless AC switches, light drimmer, electric flasher unit,  
control of household equipment such as TV sets · stereo · refrigerator · washing machine ·  
infrared kotatsu · carpet · electric fan, solenoid drivers, small motor control,  
copying machine, electric tool, other general purpose control applications  
MAXIMUM RATINGS  
Voltage class  
Symbol  
Parameter  
Unit  
12  
  1  
VDRM  
VDSM  
Repetitive peak off-state voltage  
600  
720  
V
V
  1  
Non-repetitive peak off-state voltage  
Symbol  
Parameter  
RMS on-state current  
Surge on-state current  
Conditions  
Ratings  
10  
Unit  
A
 3  
IT (RMS)  
ITSM  
Commercial frequency, sine full wave 360° conduction, Tc=103°C  
60Hz sinewave 1 full cycle, peak value, non-repetitive  
100  
A
Value corresponding to 1 cycle of half wave 60Hz, surge on-state  
current  
2
2
2
I t  
I t for fusing  
41.6  
A s  
PGM  
PG (AV)  
VGM  
IGM  
Tj  
Peak gate power dissipation  
Average gate power dissipation  
Peak gate voltage  
5
0.5  
10  
2
W
W
V
Peak gate current  
A
Junction temperature  
Storage temperature  
Weight  
–40 ~ +125  
–40 ~ +125  
1.2  
°C  
°C  
g
Tstg  
—
Typical value  
 1. Gate open.  
Mar. 2002  
MITSUBISHI SEMICONDUCTOR TRIAC  
BCR10CS  
MEDIUM POWER USE  
Refer to the page 6 as to the product guaranteed  
maximum junction temperature 150°C  
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE  
ELECTRICAL CHARACTERISTICS  
Limits  
Unit  
Symbol  
Parameter  
Test conditions  
Tj=125°C, VDRM applied  
Min.  
—
Typ.  
—
—
—
—
—
—
—
—
—
—
Max.  
2.0  
1.5  
1.5  
1.5  
1.5  
20  
mA  
V
IDRM  
Repetitive peak off-state current  
On-state voltage  
—
VTM  
Tc=25°C, ITM=15A, Instantaneous measurement  
!
@
#
!
@
#
—
V
VFGT !  
VRGT !  
VRGT #  
IFGT !  
IRGT !  
IRGT #  
VGD  
  2  
—
V
Gate trigger voltage  
Tj=25°C, VD=6V, RL=6Ω, RG=330Ω  
—
V
—
mA  
mA  
mA  
V
  2  
—
20  
Gate trigger current  
Tj=25°C, VD=6V, RL=6Ω, RG=330Ω  
Tj=125°C, VD=1/2VDRM  
—
20  
0.2  
—
—
Gate non-trigger voltage  
Thermal resistance  
 3  4  
1.8  
°C/W  
Rth (j-c)  
Junction to case  
 5  
Critical-rate of rise of off-state  
commutating voltage  
—
—
V/µs  
(dv/dt)c  
10  
Tj=125°C  
 2. Measurement using the gate trigger characteristics measurement circuit.  
 3. Case temperature is measured at the T2 terminal 1.5mm away from the molded case.  
 4. The contact thermal resistance Rth (c-f) in case of greasing is 1.0°C/W.  
 5. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.  
Commutating voltage and current waveforms  
(inductive load)  
Test conditions  
SUPPLY  
VOLTAGE  
1. Junction temperature  
TIME  
Tj=125°C  
(di/dt)c  
MAIN CURRENT  
2. Rate of decay of on-state commutating current  
TIME  
TIME  
(di/dt)c=–5.0A/ms  
MAIN  
VOLTAGE  
3. Peak off-state voltage  
VD=400V  
(dv/dt)c  
VD  
PERFORMANCE CURVES  
MAXIMUM ON-STATE CHARACTERISTICS  
RATED SURGE ON-STATE CURRENT  
102  
7
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
5
3
2
Tj = 125°C  
101  
7
5
3
2
Tj = 25°C  
100  
7
5
3
2
10–1  
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8  
100  
2
3 4 5 7 101  
2
3 4 5 7 102  
ON-STATE VOLTAGE (V)  
CONDUCTION TIME  
(CYCLES AT 60Hz)  
Mar. 2002  
MITSUBISHI SEMICONDUCTOR TRIAC  
BCR10CS  
MEDIUM POWER USE  
Refer to the page 6 as to the product guaranteed  
maximum junction temperature 150°C  
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE  
GATE CHARACTERISTICS  
GATE TRIGGER CURRENT VS.  
JUNCTION TEMPERATURE  
103  
(Ι, ΙΙ AND ΙΙΙ)  
102  
7
TYPICAL EXAMPLE  
7
5
3
2
5
4
3
VGM = 10V  
I
RGT I, IRGT III  
101  
7
2
P
GM = 5W  
P
G(AV) =  
5
0.5W  
102  
7
3
2
VGT = 1.5V  
I
FGT I  
I
GM = 2A  
100  
7
5
5
4
3
3
2
2
I
RGT I  
I
FGT I,  
I
RGT III  
V
GD = 0.2V  
10–1  
101  
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104  
–60–40–20 0 20 40 60 80 100120140  
GATE CURRENT (mA)  
JUNCTION TEMPERATURE (°C)  
MAXIMUM TRANSIENT THERMAL  
IMPEDANCE CHARACTERISTICS  
(JUNCTION TO CASE)  
GATE TRIGGER VOLTAGE VS.  
JUNCTION TEMPERATURE  
102 2 3 5 7 103  
2.4  
2
103  
TYPICAL EXAMPLE  
7
5
4
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
3
2
102  
7
5
4
3
2
101  
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102  
–60–40–20 0 20 40 60 80 100120140  
JUNCTION TEMPERATURE (°C)  
CONDUCTION TIME  
(CYCLES AT 60Hz)  
MAXIMUM ON-STATE POWER  
DISSIPATION  
ALLOWABLE CASE TEMPERATURE  
VS. RMS ON-STATE CURRENT  
32  
160  
CURVES APPLY REGARDLESS  
OF CONDUCTION ANGLE  
28  
24  
20  
16  
12  
8
140  
120  
100  
80  
360°  
CONDUCTION  
RESISTIVE,  
INDUCTIVE  
LOADS  
60  
360°  
CONDUCTION  
RESISTIVE,  
INDUCTIVE  
LOADS  
40  
4
20  
0
0
0
2
4
6
8
10 12 14 16  
0
2
4
6
8
10 12 14 16  
RMS ON-STATE CURRENT (A)  
RMS ON-STATE CURRENT (A)  
Mar. 2002  
MITSUBISHI SEMICONDUCTOR TRIAC  
BCR10CS  
MEDIUM POWER USE  
Refer to the page 6 as to the product guaranteed  
maximum junction temperature 150°C  
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE  
ALLOWABLE AMBIENT TEMPERATURE  
VS. RMS ON-STATE CURRENT  
ALLOWABLE AMBIENT TEMPERATURE  
VS. RMS ON-STATE CURRENT  
160  
160  
NATURAL CONVECTION  
ALL FINS ARE COPPER  
NO FINS  
CURVES APPLY REGARDLESS  
AND ALUMINUM  
CURVES APPLY REGARDLESS  
140  
140  
OF CONDUCTION ANGLE  
RESISTIVE, INDUCTIVE LOADS  
100  
OF CONDUCTION ANGLE  
120  
100  
80  
60  
40  
20  
0
120  
120 120 t2.3  
100 100 t2.3  
60 60 t2.3  
80  
60  
40  
20  
0
RESISTIVE,  
INDUCTIVE  
LOADS  
NATURAL  
CONVECTION  
0
2
4
6
8
10 12 14 16  
0
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2  
RMS ON-STATE CURRENT (A)  
RMS ON-STATE CURRENT (A)  
REPETITIVE PEAK OFF-STATE  
CURRENT VS. JUNCTION  
TEMPERATURE  
HOLDING CURRENT VS.  
JUNCTION TEMPERATURE  
105  
7
103  
7
5
4
TYPICAL EXAMPLE  
TYPICAL EXAMPLE  
5
3
2
3
104  
7
5
3
2
2
102  
7
103  
7
5
5
4
3
3
2
2
102  
101  
–60–40–20 0 20 40 60 80 100120140  
–60–40–20 0 20 40 60 80 100120140  
JUNCTION TEMPERATURE (°C)  
JUNCTION TEMPERATURE (°C)  
LACHING CURRENT VS.  
JUNCTION TEMPERATURE  
BREAKOVER VOLTAGE VS.  
JUNCTION TEMPERATURE  
103  
160  
7
5
TYPICAL EXAMPLE  
140  
120  
100  
80  
DISTRIBUTION T+, G–  
2
3
2
TYPICAL  
EXAMPLE  
102  
7
5
3
2
60  
101  
7
5
40  
3
2
T+  
2
, G+ TYPICAL  
, G– EXAMPLE  
20  
T–  
2
100  
0
–40  
0
40  
80  
120  
160  
–60–40–20 0 20 40 60 80 100120 140  
JUNCTION TEMPERATURE (°C)  
JUNCTION TEMPERATURE (°C)  
Mar. 2002  
MITSUBISHI SEMICONDUCTOR TRIAC  
BCR10CS  
MEDIUM POWER USE  
Refer to the page 6 as to the product guaranteed  
maximum junction temperature 150°C  
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE  
BREAKOVER VOLTAGE VS.  
RATE OF RISE OF  
OFF-STATE VOLTAGE  
COMMUTATION CHARACTERISTICS  
7
5
160  
SUPPLY  
VOLTAGE  
TYPICAL  
EXAMPLE  
TYPICAL EXAMPLE  
TIME  
(di/dt)c  
Tj = 125°C  
140  
120  
100  
80  
MAIN CURRENT  
T
j
= 125°C  
TIME  
3
2
MAIN  
VOLTAGE  
I
T
= 4A  
TIME  
V
D
(dv/dt)c  
τ = 500µs  
= 200V  
VD  
101  
f = 3Hz  
III QUADRANT  
7
5
MINIMUM  
CHARAC-  
TERISTICS  
VALUE  
I QUADRANT  
60  
3
2
40  
20  
0
III QUADRANT  
I QUADRANT  
100  
7
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104  
100  
2
3
5 7 101  
2
3
5 7 102  
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)  
RATE OF DECAY OF ON-STATE  
COMMUTATING CURRENT (A/ms)  
GATE TRIGGER CURRENT VS.  
GATE CURRENT PULSE WIDTH  
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS  
6Ω 6Ω  
103  
TYPICAL EXAMPLE  
7
5
4
3
I
FGT I  
A
A
I
RGT I  
6V  
6V  
RG  
RG  
I
RGT III  
V
V
2
102  
7
5
4
TEST PROCEDURE 1 TEST PROCEDURE 2  
6Ω  
3
2
A
6V  
RG  
101  
V
100  
2
3 4 5 7 101  
2
3 4 5 7 102  
GATE CURRENT PULSE WIDTH (µs)  
TEST PROCEDURE 3  
Mar. 2002  
MITSUBISHI SEMICONDUCTOR TRIAC  
BCR10CS  
MEDIUM POWER USE  
The product guaranteed maximum junction  
temperature 150°C (See warning.)  
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE  
Dimensions  
BCR10CS  
OUTLINE DRAWING  
in mm  
4
10.5 MAX  
4.5  
1.3  
TYPE  
NAME  
+0.3  
–0  
0
VOLTAGE  
CLASS  
1
5
0.5  
0.8  
1
2 3  
Measurement  
point of case  
temperature  
2 4  
T
T
1
TERMINAL  
TERMINAL  
1
2
3
4
2
• IT (RMS) ...................................................................... 10A  
• VDRM ....................................................................... 600V  
• IFGT !, IRGT !, IRGT # ............................................20mA  
GATE TERMINAL  
TERMINAL  
3
1
T
2
TO-220S  
APPLICATION  
Contactless AC switches, light drimmer, electric flasher unit,  
control of household equipment such as TV sets · stereo · refrigerator · washing machine ·  
infrared kotatsu · carpet · electric fan, solenoid drivers, small motor control,  
copying machine, electric tool, other general purpose control applications  
(Warning)  
1. Refer to the recommended circuit values around the triac before using.  
2. Be sure to exchange the specification before using. If not exchanged, general triacs will be supplied.  
MAXIMUM RATINGS  
Voltage class  
Symbol  
Parameter  
Unit  
12  
  1  
VDRM  
VDSM  
Repetitive peak off-state voltage  
600  
720  
V
V
  1  
Non-repetitive peak off-state voltage  
Symbol  
Parameter  
RMS on-state current  
Surge on-state current  
Conditions  
Ratings  
10  
Unit  
A
 3  
IT (RMS)  
ITSM  
Commercial frequency, sine full wave 360° conduction, Tc=128°C  
60Hz sinewave 1 full cycle, peak value, non-repetitive  
100  
A
Value corresponding to 1 cycle of half wave 60Hz, surge on-state  
current  
2
2
2
I t  
I t for fusing  
41.6  
A s  
PGM  
PG (AV)  
VGM  
IGM  
Tj  
Peak gate power dissipation  
Average gate power dissipation  
Peak gate voltage  
5
0.5  
10  
2
W
W
V
Peak gate current  
A
Junction temperature  
Storage temperature  
Weight  
–40 ~ +150  
–40 ~ +150  
1.2  
°C  
°C  
g
Tstg  
—
Typical value  
 1. Gate open.  
Mar. 2002  
MITSUBISHI SEMICONDUCTOR TRIAC  
BCR10CS  
MEDIUM POWER USE  
The product guaranteed maximum junction  
temperature 150°C (See warning.)  
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE  
ELECTRICAL CHARACTERISTICS  
Limits  
Unit  
Symbol  
Parameter  
Test conditions  
Tj=150°C, VDRM applied  
Min.  
—
Typ.  
—
—
—
—
—
—
—
—
—
—
Max.  
2.0  
1.5  
1.5  
1.5  
1.5  
20  
mA  
V
IDRM  
Repetitive peak off-state current  
On-state voltage  
—
VTM  
Tc=25°C, ITM=15A, Instantaneous measurement  
!
@
#
!
@
#
—
V
VFGT !  
VRGT !  
VRGT #  
IFGT !  
IRGT !  
IRGT #  
VGD  
  2  
—
V
Gate trigger voltage  
Tj=25°C, VD=6V, RL=6Ω, RG=330Ω  
—
V
—
mA  
mA  
mA  
V
  2  
—
20  
Gate trigger current  
Tj=25°C, VD=6V, RL=6Ω, RG=330Ω  
Tj=125°C/150°C, VD=1/2VDRM  
—
20  
0.2/0.1  
—
—
Gate non-trigger voltage  
Thermal resistance  
 3  4  
1.8  
°C/W  
Rth (j-c)  
Junction to case  
 5  
Critical-rate of rise of off-state  
commutating voltage  
—
—
V/µs  
(dv/dt)c  
10/1  
Tj=125°C/150°C  
 2. Measurement using the gate trigger characteristics measurement circuit.  
 3. Case temperature is measured at the T2 terminal 1.5mm away from the molded case.  
 4. The contact thermal resistance Rth (c-f) in case of greasing is 1.0°C/W.  
 5. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.  
Commutating voltage and current waveforms  
(inductive load)  
Test conditions  
SUPPLY  
VOLTAGE  
TIME  
1. Junction temperature  
Tj=125°C/150°C  
(di/dt)c  
MAIN CURRENT  
2. Rate of decay of on-state commutating current  
TIME  
TIME  
(di/dt)c=–5.0A/ms  
MAIN  
VOLTAGE  
3. Peak off-state voltage  
VD=400V  
(dv/dt)c  
VD  
PERFORMANCE CURVES  
MAXIMUM ON-STATE CHARACTERISTICS  
RATED SURGE ON-STATE CURRENT  
102  
7
5
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
3
2
Tj = 150°C  
101  
7
5
3
2
Tj = 25°C  
100  
7
5
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0  
100  
2
3 4 5 7 101  
2
3 4 5 7 102  
ON-STATE VOLTAGE (V)  
CONDUCTION TIME  
(CYCLES AT 60Hz)  
Mar. 2002  
MITSUBISHI SEMICONDUCTOR TRIAC  
BCR10CS  
MEDIUM POWER USE  
The product guaranteed maximum junction  
temperature 150°C (See warning.)  
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE  
GATE CHARACTERISTICS  
(Ι, ΙΙ AND ΙΙΙ)  
GATE TRIGGER CURRENT VS.  
JUNCTION TEMPERATURE  
103  
5
TYPICAL EXAMPLE  
3
2
7
V
GM = 10V  
5
3
P
GM = 5W  
101  
7
5
P
G(AV) =  
I
RGT I, IRGT III  
0.5W  
I
GM = 2A  
2
3
2
VGT = 1.5V  
102  
I
FGT I  
100  
7
5
7
5
3
2
3
2
I
RGT I  
IFGT I, IRGT III  
10–1  
7
VGD = 0.1V  
5
101  
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104  
–60–40–20  
0 20 40 60 80 100120140160  
GATE CURRENT (mA)  
JUNCTION TEMPERATURE (°C)  
MAXIMUM TRANSIENT THERMAL  
IMPEDANCE CHARACTERISTICS  
(JUNCTION TO CASE)  
GATE TRIGGER VOLTAGE VS.  
JUNCTION TEMPERATURE  
102 2 3 5 7 103  
2.4  
2
103  
TYPICAL EXAMPLE  
7
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
5
4
3
2
102  
7
5
4
3
2
101  
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102  
–60–40–20  
0
20 40 60 80 100120140160  
JUNCTION TEMPERATURE (°C)  
CONDUCTION TIME  
(CYCLES AT 60Hz)  
MAXIMUM ON-STATE POWER  
DISSIPATION  
ALLOWABLE CASE TEMPERATURE  
VS. RMS ON-STATE CURRENT  
32  
28  
24  
20  
16  
12  
8
160  
CURVES APPLY REGARDLESS  
OF CONDUCTION ANGLE  
140  
120  
100  
80  
360°  
CONDUCTION  
RESISTIVE,  
INDUCTIVE  
LOADS  
60  
360°  
CONDUCTION  
RESISTIVE,  
INDUCTIVE  
LOADS  
40  
4
20  
0
0
0
2
4
6
8
10 12 14 16  
0
2
4
6
8
10 12 14 16  
RMS ON-STATE CURRENT (A)  
RMS ON-STATE CURRENT (A)  
Mar. 2002  
MITSUBISHI SEMICONDUCTOR TRIAC  
BCR10CS  
MEDIUM POWER USE  
The product guaranteed maximum junction  
temperature 150°C (See warning.)  
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE  
ALLOWABLE AMBIENT TEMPERATURE  
ALLOWABLE AMBIENT TEMPERATURE  
VS. RMS ON-STATE CURRENT  
VS. RMS ON-STATE CURRENT  
160  
140  
120  
100  
80  
160  
ALL FINS ARE COPPER  
AND ALUMINUM, CURVES  
APPLY REGARDLESS OF  
CONDUCTION ANGLE  
120 120 t2.3  
NATURAL CONVECTION  
NO FINS, CURVES APPLY  
140  
REGARDLESS OF  
CONDUCTION ANGLE  
RESISTIVE, INDUCTIVE  
LOADS  
120  
100  
80  
60  
40  
20  
0
100 100 t2.3  
60 60 t2.3  
60  
RESISTIVE,  
INDUCTIVE  
LOADS  
NATURAL  
CONVECTION  
40  
20  
0
0
2
4
6
8
10 12 14 16  
0
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2  
RMS ON-STATE CURRENT (A)  
RMS ON-STATE CURRENT (A)  
REPETITIVE PEAK OFF-STATE  
CURRENT VS. JUNCTION  
TEMPERATURE  
HOLDING CURRENT VS.  
JUNCTION TEMPERATURE  
106  
7
103  
7
5
4
TYPICAL EXAMPLE  
TYPICAL EXAMPLE  
5
3
2
105  
7
3
5
3
2
2
104  
7
102  
7
5
4
5
3
2
103  
7
3
5
3
2
2
102  
101  
–60–40–20  
0
20 40 60 80 100120140160  
–60–40–20 0 20 40 60 80 100120140160  
JUNCTION TEMPERATURE (°C)  
JUNCTION TEMPERATURE (°C)  
LACHING CURRENT VS.  
JUNCTION TEMPERATURE  
BREAKOVER VOLTAGE VS.  
JUNCTION TEMPERATURE  
103  
7
160  
140  
120  
100  
80  
TYPICAL EXAMPLE  
5
DISTRIBUTION  
T+, G–  
TYPICAL  
EXAMPLE  
2
3
2
102  
7
5
3
2
60  
101  
7
5
40  
3
2
T+  
2
, G+ TYPICAL  
, G– EXAMPLE  
20  
T–  
2
100  
0
–40  
0
40  
80  
120  
160  
–60–40–20  
0
20 40 60 80 100120140160  
JUNCTION TEMPERATURE (°C)  
JUNCTION TEMPERATURE (°C)  
Mar. 2002  
MITSUBISHI SEMICONDUCTOR TRIAC  
BCR10CS  
MEDIUM POWER USE  
The product guaranteed maximum junction  
temperature 150°C (See warning.)  
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE  
BREAKOVER VOLTAGE VS.  
RATE OF RISE OF  
OFF-STATE VOLTAGE (T = 125°C)  
BREAKOVER VOLTAGE VS.  
RATE OF RISE OF  
OFF-STATE VOLTAGE (Tj = 150°C)  
j
160  
140  
120  
100  
80  
160  
140  
120  
100  
80  
TYPICAL EXAMPLE  
= 125°C  
TYPICAL EXAMPLE  
= 150°C  
T
j
Tj  
III QUADRANT  
III QUADRANT  
60  
60  
40  
40  
I QUADRANT  
I QUADRANT  
20  
20  
0
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104  
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104  
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)  
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)  
COMMUTATION CHARACTERISTICS  
COMMUTATION CHARACTERISTICS  
(T  
j
= 125°C)  
(T  
j
= 150°C)  
7
5
7
5
SUPPLY  
VOLTAGE  
SUPPLY  
VOLTAGE  
TYPICAL  
EXAMPLE  
TYPICAL  
EXAMPLE  
TIME  
TIME  
(di/dt)c  
TIME  
(di/dt)c  
TIME  
MAIN CURRENT  
MAIN CURRENT  
T
j
= 125°C  
T
j
= 150°C  
3
2
3
2
MAIN  
VOLTAGE  
MAIN  
VOLTAGE  
I
T
= 4A  
I
T
= 4A  
TIME  
TIME  
VD  
V
D
(dv/dt)c  
(dv/dt)c  
τ = 500µs  
= 200V  
τ = 500µs  
= 200V  
f = 3Hz  
VD  
VD  
101  
101  
f = 3Hz  
MINIMUM  
CHARAC-  
TERISTICS  
VALUE  
7
5
7
5
I QUADRANT  
III QUADRANT  
I QUADRANT  
3
2
3
2
MINIMUM  
CHARAC-  
TERISTICS  
VALUE  
III QUADRANT  
5 7 101  
100  
7
100  
7
100  
2
3
2
3
5 7 102  
100  
2
3
5 7 101  
2
3
5 7 102  
RATE OF DECAY OF ON-STATE  
COMMUTATING CURRENT (A/ms)  
RATE OF DECAY OF ON-STATE  
COMMUTATING CURRENT (A/ms)  
GATE TRIGGER CURRENT VS.  
GATE CURRENT PULSE WIDTH  
103  
7
TYPICAL EXAMPLE  
5
4
3
I
FGT I  
I
RGT I  
I
RGT III  
2
102  
7
5
4
3
2
101  
100  
2
3 4 5 7 101  
2
3 4 5 7 102  
GATE CURRENT PULSE WIDTH (µs)  
Mar. 2002  
MITSUBISHI SEMICONDUCTOR TRIAC  
BCR10CS  
MEDIUM POWER USE  
The product guaranteed maximum junction  
temperature 150°C (See warning.)  
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE  
RECOMMENDED CIRCUIT VALUES  
AROUND THE TRIAC  
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS  
6Ω  
6Ω  
LOAD  
C
1
A
A
6V  
6V  
RG  
RG  
R1  
V
V
C0  
R0  
TEST PROCEDURE 1 TEST PROCEDURE 2  
6Ω  
C
R
1
1
= 0.1~0.47µF  
= 47~100Ω  
C
R
0
0
= 0.1µF  
= 100Ω  
A
6V  
RG  
V
TEST PROCEDURE 3  
Mar. 2002