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To all our customers  
Regarding the change of names mentioned in the document, such as Mitsubishi  
Electric and Mitsubishi XX, to Renesas Technology Corp.  
The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas  
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog  
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)  
Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi  
Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names  
have in fact all been changed to Renesas Technology Corp. Thank you for your understanding.  
Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been  
made to the contents of the document, and these changes do not constitute any alteration to the  
contents of the document itself.  
Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices  
and power devices.  
Renesas Technology Corp.  
Customer Support Dept.  
April 1, 2003  
MITSUBISHI SEMICONDUCTOR TRIAC  
BCR10PM  
MEDIUM POWER USE  
Refer to the page 6 as to the product guaranteed  
maximum junction temperature 150°C  
INSULATED TYPE, PLANAR PASSIVATION TYPE  
Dimensions  
BCR10PM  
OUTLINE DRAWING  
in mm  
10.5 MAX  
2.8  
5.2  
TYPE  
NAME  
φ3.2±0.2  
1.3 MAX  
VOLTAGE  
CLASS  
0.8  
2.54  
2.54  
0.5  
2.6  
• IT (RMS) ...................................................................... 10A  
• VDRM ....................................................................... 600V  
• IFGT !, IRGT !, IRGT # ............................................20mA  
• Viso ........................................................................ 2000V  
• UL Recognized: Yellow Card No.E80276(N)  
File No. E80271  
Measurement point of  
case temperature  
1 2 3  
2
1
T
T
1
2
TERMINAL  
TERMINAL  
1
2
3
3
GATE TERMINAL  
TO-220F  
APPLICATION  
Switching mode power supply, light dimmer, electric flasher unit, hair drier,  
control of household equipment such as TV sets · stereo · refrigerator · washing machine · infrared  
kotatsu · carpet, small motor control,  
copying machine, electric tool, solenoid drivers, other general purpose control applications  
MAXIMUM RATINGS  
Voltage class  
Symbol  
Parameter  
Unit  
12  
✽✽1  
VDRM  
VDSM  
Repetitive peak off-state voltage  
600  
720  
V
V
✽✽1  
Non-repetitive peak off-state voltage  
Symbol  
Parameter  
RMS on-state current  
Surge on-state current  
Conditions  
Ratings  
10  
Unit  
A
IT (RMS)  
ITSM  
Commercial power frequency, sine full wave 360° conduction, Tc=85°C  
60Hz sinewave 1 full cycle, peak value, non-repetitive  
100  
A
Value corresponding to 1 cycle of half wave 60Hz, surge on-state  
current  
2
2
2
I t  
I t for fusing  
41.6  
A s  
PGM  
PG (AV)  
VGM  
IGM  
Tj  
Peak gate power dissipation  
Average gate power dissipation  
Peak gate voltage  
5
W
W
V
0.5  
10  
Peak gate current  
2
A
Junction temperature  
Storage temperature  
Weight  
–40 ~ +125  
–40 ~ +125  
2.0  
°C  
°C  
g
Tstg  
—
Typical value  
Viso  
Isolation voltage  
Ta=25°C, AC 1 minute, T1 · T2 · G terminal to case  
2000  
V
✽1. Gate open.  
Mar. 2002  
MITSUBISHI SEMICONDUCTOR TRIAC  
BCR10PM  
MEDIUM POWER USE  
Refer to the page 6 as to the product guaranteed  
maximum junction temperature 150°C  
INSULATED TYPE, PLANAR PASSIVATION TYPE  
ELECTRICAL CHARACTERISTICS  
Limits  
Unit  
Symbol  
Parameter  
Test conditions  
Tj=125°C, VDRM applied  
Min.  
—
Typ.  
—
—
—
—
—
—
—
—
—
—
Max.  
2.0  
1.5  
1.5  
1.5  
1.5  
20  
mA  
V
IDRM  
Repetitive peak off-state current  
On-state voltage  
—
VTM  
Tc=25°C, ITM=15A, Instantaneous measurement  
!
@
#
!
@
#
—
V
VFGT !  
VRGT !  
VRGT #  
IFGT !  
IRGT !  
IRGT #  
VGD  
✽✽2  
—
V
Gate trigger voltage  
Tj=25°C, VD=6V, RL=6Ω, RG=330Ω  
—
V
—
mA  
mA  
mA  
V
✽✽2  
—
20  
Gate trigger current  
Tj=25°C, VD=6V, RL=6Ω, RG=330Ω  
Tj=125°C, VD=1/2VDRM  
—
20  
0.2  
—
—
Gate non-trigger voltage  
Thermal resistance  
✽3  
3.5  
°C/W  
Rth (j-c)  
Junction to case  
✽4  
Critical-rate of rise of off-state  
commutating voltage  
—
—
V/µs  
(dv/dt)c  
10  
Tj=125°C  
✽2. Measurement using the gate trigger characteristics measurement circuit.  
✽3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.  
✽4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.  
Commutating voltage and current waveforms  
(inductive load)  
Test conditions  
SUPPLY  
VOLTAGE  
1. Junction temperature  
Tj=125°C  
TIME  
2. Rate of decay of on-state commutating current  
(di/dt)c=–5.0A/ms  
(di/dt)c  
MAIN CURRENT  
TIME  
TIME  
MAIN  
VOLTAGE  
3. Peak off-state voltage  
VD=400V  
(dv/dt)c  
VD  
PERFORMANCE CURVES  
MAXIMUM ON-STATE CHARACTERISTICS  
RATED SURGE ON-STATE CURRENT  
102  
7
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
5
3
2
Tj = 125°C  
101  
7
5
3
2
Tj = 25°C  
100  
7
5
3
2
10–1  
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8  
100  
2
3 4 5 7 101  
2
3 4 5 7 102  
ON-STATE VOLTAGE (V)  
CONDUCTION TIME  
(CYCLES AT 60Hz)  
Mar. 2002  
MITSUBISHI SEMICONDUCTOR TRIAC  
BCR10PM  
MEDIUM POWER USE  
Refer to the page 6 as to the product guaranteed  
maximum junction temperature 150°C  
INSULATED TYPE, PLANAR PASSIVATION TYPE  
GATE CHARACTERISTICS  
GATE TRIGGER CURRENT VS.  
JUNCTION TEMPERATURE  
103  
(Ι, ΙΙ AND ΙΙΙ)  
102  
7
TYPICAL EXAMPLE  
7
5
3
2
5
4
3
V
GM = 10V  
I
RGT I, IRGT III  
P
GM = 5W  
101  
7
5
3
2
2
P
G(AV) =  
0.5W  
I
GM = 2A  
102  
7
V
GT = 1.5V  
I
FGT I  
100  
7
5
5
4
3
3
2
2
I
RGT I  
I
FGT I,  
I
RGT III  
VGD = 0.2V  
10–1  
101  
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104  
–60–40–20 0 20 40 60 80 100120140  
GATE CURRENT (mA)  
JUNCTION TEMPERATURE (°C)  
MAXIMUM TRANSIENT THERMAL  
IMPEDANCE CHARACTERISTICS  
(JUNCTION TO CASE)  
GATE TRIGGER VOLTAGE VS.  
JUNCTION TEMPERATURE  
102 2 3 5 7 103 2 3  
4.0  
5
103  
TYPICAL EXAMPLE  
7
5
4
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0
3
2
102  
7
5
4
3
2
101  
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102  
–60–40–20 0 20 40 60 80 100120140  
JUNCTION TEMPERATURE (°C)  
CONDUCTION TIME  
(CYCLES AT 60Hz)  
MAXIMUM TRANSIENT THERMAL  
IMPEDANCE CHARACTERISTICS  
(JUNCTION TO AMBIENT)  
MAXIMUM ON-STATE POWER  
DISSIPATION  
103  
16  
7
5
NO FINS  
14  
12  
10  
8
3
2
102  
7
360°  
CONDUCTION  
RESISTIVE,  
INDUCTIVE  
LOADS  
5
3
2
101  
7
5
3
2
6
100  
7
4
5
2
3
2
10–1  
0
1012 3 571022 3 571032 3 571042 3 57105  
0
2
4
6
8
10 12 14 16  
CONDUCTION TIME  
(CYCLES AT 60Hz)  
RMS ON-STATE CURRENT (A)  
Mar. 2002  
MITSUBISHI SEMICONDUCTOR TRIAC  
BCR10PM  
MEDIUM POWER USE  
Refer to the page 6 as to the product guaranteed  
maximum junction temperature 150°C  
INSULATED TYPE, PLANAR PASSIVATION TYPE  
ALLOWABLE CASE TEMPERATURE  
VS. RMS ON-STATE CURRENT  
ALLOWABLE AMBIENT TEMPERATURE  
VS. RMS ON-STATE CURRENT  
160  
160  
ALL FINS ARE BLACK PAINTED  
ALUMINUM AND GREASED  
CURVES APPLY REGARDLESS  
OF CONDUCTION ANGLE  
CURVES APPLY REGARDLESS  
OF CONDUCTION ANGLE  
140  
120  
100  
80  
140  
120  
100  
80  
60  
40  
20  
0
120 120 t2.3  
100 100 t2.3  
60 60 t2.3  
60  
RESISTIVE,  
INDUCTIVE  
LOADS  
NATURAL  
CONVECTION  
360°  
40  
CONDUCTION  
RESISTIVE,  
INDUCTIVE  
LOADS  
20  
0
0
2
4
6
8
10 12 14 16  
0
2
4
6
8
10 12 14 16  
RMS ON-STATE CURRENT (A)  
RMS ON-STATE CURRENT (A)  
REPETITIVE PEAK OFF-STATE  
CURRENT VS. JUNCTION  
TEMPERATURE  
ALLOWABLE AMBIENT TEMPERATURE  
VS. RMS ON-STATE CURRENT  
160  
105  
7
NATURAL CONVECTION  
NO FINS  
TYPICAL EXAMPLE  
5
140  
120  
100  
80  
CURVES APPLY REGARDLESS  
OF CONDUCTION ANGLE  
RESISTIVE, INDUCTIVE LOADS  
3
2
104  
7
5
3
2
60  
103  
7
5
40  
3
2
20  
0
102  
0
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2  
RMS ON-STATE CURRENT (A)  
–60–40–20 0 20 40 60 80 100120140  
JUNCTION TEMPERATURE (°C)  
HOLDING CURRENT VS.  
LACHING CURRENT VS.  
JUNCTION TEMPERATURE  
JUNCTION TEMPERATURE  
103  
7
5
4
103  
7
5
TYPICAL EXAMPLE  
3
2
DISTRIBUTION  
T+, G–  
2
TYPICAL  
EXAMPLE  
3
102  
7
5
3
2
2
102  
7
101  
7
5
5
4
3
3
2
T+  
2
, G+ TYPICAL  
, G– EXAMPLE  
2
T–  
2
101  
100  
–60–40–20 0 20 40 60 80 100120140  
–40  
0
40  
80  
120  
160  
JUNCTION TEMPERATURE (°C)  
JUNCTION TEMPERATURE (°C)  
Mar. 2002  
MITSUBISHI SEMICONDUCTOR TRIAC  
BCR10PM  
MEDIUM POWER USE  
Refer to the page 6 as to the product guaranteed  
maximum junction temperature 150°C  
INSULATED TYPE, PLANAR PASSIVATION TYPE  
BREAKOVER VOLTAGE VS.  
RATE OF RISE OF  
BREAKOVER VOLTAGE VS.  
JUNCTION TEMPERATURE  
OFF-STATE VOLTAGE  
160  
160  
TYPICAL EXAMPLE  
TYPICAL EXAMPLE  
Tj = 125°C  
140  
120  
100  
80  
140  
120  
100  
80  
60  
60  
III QUADRANT  
I QUADRANT  
40  
40  
20  
20  
0
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104  
–60–40 –20  
0 20 40 60 80 100120140  
JUNCTION TEMPERATURE (°C)  
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)  
GATE TRIGGER CURRENT VS.  
GATE CURRENT PULSE WIDTH  
COMMUTATION CHARACTERISTICS  
103  
7
5
SUPPLY  
VOLTAGE  
TYPICAL EXAMPLE  
7
TYPICAL  
EXAMPLE  
TIME  
(di/dt)c  
MAIN CURRENT  
5
4
3
I
FGT I  
TIME  
T
j
= 125°C  
3
2
MAIN  
VOLTAGE  
TIME  
I
T
= 4A  
IRGT I  
VD  
(dv/dt)c  
τ = 500µs  
= 200V  
I
RGT III  
2
VD  
101  
f = 3Hz  
102  
7
5
4
7
5
MINIMUM  
CHARAC-  
TERISTICS  
VALUE  
I QUADRANT  
3
2
3
2
III QUADRANT  
5 7 101  
100  
7
101  
100  
2
3 4 5 7 101  
2
3 4 5 7 102  
100  
2
3
2
3
5 7 102  
RATE OF DECAY OF ON-STATE  
COMMUTATING CURRENT (A/ms)  
GATE CURRENT PULSE WIDTH (µs)  
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS  
6Ω 6Ω  
A
A
6V  
6V  
RG  
RG  
V
V
TEST PROCEDURE 1 TEST PROCEDURE 2  
6Ω  
A
6V  
RG  
V
TEST PROCEDURE 3  
Mar. 2002  
MITSUBISHI SEMICONDUCTOR TRIAC  
BCR10PM  
MEDIUM POWER USE  
The product guaranteed maximum junction  
temperature 150°C (See warning.)  
INSULATED TYPE, PLANAR PASSIVATION TYPE  
Dimensions  
BCR10PM  
OUTLINE DRAWING  
in mm  
10.5 MAX  
2.8  
5.2  
TYPE  
NAME  
φ3.2±0.2  
1.3 MAX  
VOLTAGE  
CLASS  
0.8  
2.54  
2.54  
0.5  
2.6  
• IT (RMS) ...................................................................... 10A  
• VDRM ....................................................................... 600V  
• IFGT !, IRGT !, IRGT # ............................................20mA  
• Viso ........................................................................ 2000V  
• UL Recognized: Yellow Card No.E80276(N)  
File No. E80271  
Measurement point of  
case temperature  
1 2 3  
2
1
T
T
1
2
TERMINAL  
TERMINAL  
1
2
3
3
GATE TERMINAL  
TO-220F  
APPLICATION  
Switching mode power supply, light dimmer, electric flasher unit, hair drier,  
control of household equipment such as TV sets · stereo · refrigerator · washing machine · infrared  
kotatsu · carpet, small motor control,  
copying machine, electric tool, solenoid drivers, other general purpose control applications  
(Warning)  
1. Refer to the recommended circuit values around the triac before using.  
2. Be sure to exchange the specification before using. If not exchanged, general triacs will be supplied.  
MAXIMUM RATINGS  
Voltage class  
Symbol  
Parameter  
Unit  
12  
✽✽1  
VDRM  
VDSM  
Repetitive peak off-state voltage  
600  
720  
V
V
✽✽1  
Non-repetitive peak off-state voltage  
Symbol  
Parameter  
RMS on-state current  
Surge on-state current  
Conditions  
Ratings  
10  
Unit  
A
IT (RMS)  
ITSM  
Commercial power frequency, sine full wave 360° conduction, Tc=110°C  
60Hz sinewave 1 full cycle, peak value, non-repetitive  
100  
A
Value corresponding to 1 cycle of half wave 60Hz, surge on-state  
current  
2
2
2
I t  
I t for fusing  
41.6  
A s  
PGM  
PG (AV)  
VGM  
IGM  
Tj  
Peak gate power dissipation  
Average gate power dissipation  
Peak gate voltage  
5
W
W
V
0.5  
10  
Peak gate current  
2
A
Junction temperature  
Storage temperature  
Weight  
–40 ~ +150  
–40 ~ +150  
2.0  
°C  
°C  
g
Tstg  
—
Typical value  
Viso  
Isolation voltage  
Ta=25°C, AC 1 minute, T1 · T2 · G terminal to case  
2000  
V
✽1. Gate open.  
Mar. 2002  
MITSUBISHI SEMICONDUCTOR TRIAC  
BCR10PM  
MEDIUM POWER USE  
The product guaranteed maximum junction  
temperature 150°C (See warning.)  
INSULATED TYPE, PLANAR PASSIVATION TYPE  
ELECTRICAL CHARACTERISTICS  
Limits  
Unit  
Symbol  
Parameter  
Test conditions  
Tj=150°C, VDRM applied  
Min.  
—
Typ.  
—
—
—
—
—
—
—
—
—
—
Max.  
2.0  
1.5  
1.5  
1.5  
1.5  
20  
mA  
V
IDRM  
Repetitive peak off-state current  
On-state voltage  
—
VTM  
Tc=25°C, ITM=15A, Instantaneous measurement  
!
@
#
!
@
#
—
V
VFGT !  
VRGT !  
VRGT #  
IFGT !  
IRGT !  
IRGT #  
VGD  
✽✽2  
—
V
Gate trigger voltage  
Tj=25°C, VD=6V, RL=6Ω, RG=330Ω  
—
V
—
mA  
mA  
mA  
V
✽✽2  
—
20  
Gate trigger current  
Tj=25°C, VD=6V, RL=6Ω, RG=330Ω  
Tj=125°C/150°C, VD=1/2VDRM  
—
20  
0.2/0.1  
—
—
Gate non-trigger voltage  
Thermal resistance  
✽3  
3.5  
°C/W  
Rth (j-c)  
Junction to case  
✽4  
Critical-rate of rise of off-state  
commutating voltage  
—
—
V/µs  
(dv/dt)c  
10/1  
Tj=125°C/150°C  
✽2. Measurement using the gate trigger characteristics measurement circuit.  
✽3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.  
✽4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.  
Commutating voltage and current waveforms  
(inductive load)  
Test conditions  
SUPPLY  
VOLTAGE  
1. Junction temperature  
Tj=125°C/150°C  
TIME  
2. Rate of decay of on-state commutating current  
(di/dt)c=–5.0A/ms  
(di/dt)c  
MAIN CURRENT  
TIME  
TIME  
MAIN  
VOLTAGE  
3. Peak off-state voltage  
VD=400V  
(dv/dt)c  
VD  
PERFORMANCE CURVES  
MAXIMUM ON-STATE CHARACTERISTICS  
RATED SURGE ON-STATE CURRENT  
102  
7
5
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
3
2
Tj = 150°C  
101  
7
5
3
2
Tj = 25°C  
100  
7
5
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0  
100  
2
3 4 5 7 101  
2
3 4 5 7 102  
ON-STATE VOLTAGE (V)  
CONDUCTION TIME  
(CYCLES AT 60Hz)  
Mar. 2002  
MITSUBISHI SEMICONDUCTOR TRIAC  
BCR10PM  
MEDIUM POWER USE  
The product guaranteed maximum junction  
temperature 150°C (See warning.)  
INSULATED TYPE, PLANAR PASSIVATION TYPE  
GATE CHARACTERISTICS  
(Ι, ΙΙ AND ΙΙΙ)  
GATE TRIGGER CURRENT VS.  
JUNCTION TEMPERATURE  
103  
5
TYPICAL EXAMPLE  
3
2
7
V
GM = 10V  
5
3
P
GM = 5W  
101  
7
5
P
G(AV) =  
I
RGT I, IRGT III  
0.5W  
I
GM = 2A  
2
3
2
VGT = 1.5V  
102  
I
FGT I  
100  
7
5
7
5
3
2
3
2
I
RGT I  
IFGT I, IRGT III  
10–1  
7
VGD = 0.1V  
5
101  
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104  
–60–40–20  
0 20 40 60 80 100120140160  
GATE CURRENT (mA)  
JUNCTION TEMPERATURE (°C)  
MAXIMUM TRANSIENT THERMAL  
IMPEDANCE CHARACTERISTICS  
(JUNCTION TO CASE)  
GATE TRIGGER VOLTAGE VS.  
JUNCTION TEMPERATURE  
102 2 3 5 7 103 2 3  
4.0  
5
103  
TYPICAL EXAMPLE  
7
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0
5
4
3
2
102  
7
5
4
3
2
101  
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102  
–60–40–20  
0
20 40 60 80 100120140160  
JUNCTION TEMPERATURE (°C)  
CONDUCTION TIME  
(CYCLES AT 60Hz)  
MAXIMUM TRANSIENT THERMAL  
IMPEDANCE CHARACTERISTICS  
(JUNCTION TO AMBIENT)  
MAXIMUM ON-STATE POWER  
DISSIPATION  
103  
7
16  
NO FINS  
5
14  
12  
10  
8
3
2
102  
7
360°  
CONDUCTION  
RESISTIVE,  
INDUCTIVE  
LOADS  
5
3
2
101  
7
5
3
2
6
100  
7
4
5
2
3
2
10–1  
0
1012 3 571022 3 571032 3 571042 3 57105  
0
2
4
6
8
10 12 14 16  
CONDUCTION TIME  
(CYCLES AT 60Hz)  
RMS ON-STATE CURRENT (A)  
Mar. 2002  
MITSUBISHI SEMICONDUCTOR TRIAC  
BCR10PM  
MEDIUM POWER USE  
The product guaranteed maximum junction  
temperature 150°C (See warning.)  
INSULATED TYPE, PLANAR PASSIVATION TYPE  
ALLOWABLE CASE TEMPERATURE  
ALLOWABLE AMBIENT TEMPERATURE  
VS. RMS ON-STATE CURRENT  
VS. RMS ON-STATE CURRENT  
160  
140  
120  
100  
80  
160  
CURVES APPLY REGARDLESS  
OF CONDUCTION ANGLE  
ALL FINS ARE BLACK PAINTED  
ALUMINUM AND GREASED  
CURVES APPLY  
REGARDLESS OF  
CONDUCTION  
140  
120  
100  
80  
ANGLE  
120 120 t2.3  
100 100 t2.3  
60  
60  
RESISTIVE,  
60 60 t2.3  
360°  
INDUCTIVE  
LOADS  
NATURAL  
CONVECTION  
40  
40  
CONDUCTION  
RESISTIVE,  
INDUCTIVE  
LOADS  
20  
20  
0
0
0
2
4
6
8
10 12 14 16  
0
2
4
6
8
10 12 14 16  
RMS ON-STATE CURRENT (A)  
RMS ON-STATE CURRENT (A)  
REPETITIVE PEAK OFF-STATE  
CURRENT VS. JUNCTION  
TEMPERATURE  
ALLOWABLE AMBIENT TEMPERATURE  
VS. RMS ON-STATE CURRENT  
106  
7
160  
TYPICAL EXAMPLE  
NATURAL CONVECTION  
NO FINS,CURVES  
APPLY REGARDLESS  
OF CONDUCTION ANGLE  
RESISTIVE, INDUCTIVE  
LOADS  
5
140  
120  
100  
80  
3
2
105  
7
5
3
2
104  
7
5
3
2
60  
103  
7
40  
5
20  
3
2
102  
0
0
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2  
RMS ON-STATE CURRENT (A)  
–60–40–20 0 20 40 60 80 100120140160  
JUNCTION TEMPERATURE (°C)  
HOLDING CURRENT VS.  
LACHING CURRENT VS.  
JUNCTION TEMPERATURE  
JUNCTION TEMPERATURE  
103  
7
5
4
103  
7
TYPICAL EXAMPLE  
5
3
2
DISTRIBUTION  
T+, G–  
2
TYPICAL  
EXAMPLE  
3
102  
7
5
3
2
2
102  
7
101  
7
5
5
4
3
3
2
T+  
T–  
2
, G+ TYPICAL  
, G– EXAMPLE  
2
2
101  
100  
–60–40–20  
0
20 40 60 80 100120140160  
–40  
0
40  
80  
120  
160  
JUNCTION TEMPERATURE (°C)  
JUNCTION TEMPERATURE (°C)  
Mar. 2002  
MITSUBISHI SEMICONDUCTOR TRIAC  
BCR10PM  
MEDIUM POWER USE  
The product guaranteed maximum junction  
temperature 150°C (See warning.)  
INSULATED TYPE, PLANAR PASSIVATION TYPE  
BREAKOVER VOLTAGE VS.  
RATE OF RISE OF  
BREAKOVER VOLTAGE VS.  
JUNCTION TEMPERATURE  
OFF-STATE VOLTAGE (Tj = 125°C)  
160  
140  
120  
100  
80  
160  
TYPICAL EXAMPLE  
TYPICAL EXAMPLE  
Tj = 125°C  
140  
120  
100  
80  
60  
60  
III QUADRANT  
I QUADRANT  
40  
40  
20  
20  
0
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104  
–60–40–20  
0 20 40 60 80 100120140160  
JUNCTION TEMPERATURE (°C)  
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)  
BREAKOVER VOLTAGE VS.  
RATE OF RISE OF  
COMMUTATION CHARACTERISTICS  
OFF-STATE VOLTAGE (Tj = 150°C)  
(Tj = 125°C)  
7
5
160  
140  
120  
100  
80  
SUPPLY  
VOLTAGE  
TYPICAL EXAMPLE  
TYPICAL  
TIME  
(di/dt)c  
Tj = 150°C  
EXAMPLE  
Tj = 125°C  
IT = 4A  
τ = 500µs  
VD = 200V  
f = 3Hz  
MAIN CURRENT  
TIME  
3
2
MAIN  
VOLTAGE  
TIME  
VD  
(dv/dt)c  
101  
7
5
MINIMUM  
CHARAC-  
TERISTICS  
VALUE  
60  
I QUADRANT  
3
2
40  
III QUADRANT  
I QUADRANT  
III QUADRANT  
20  
100  
7
0
100  
2
3
5 7 101  
2
3
5 7 102  
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104  
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)  
RATE OF DECAY OF ON-STATE  
COMMUTATING CURRENT (A/ms)  
COMMUTATION CHARACTERISTICS  
GATE TRIGGER CURRENT VS.  
GATE CURRENT PULSE WIDTH  
(Tj = 150°C)  
103  
7
5
4
7
5
SUPPLY  
VOLTAGE  
TYPICAL EXAMPLE  
IFGT I  
TYPICAL  
TIME  
(di/dt)c  
EXAMPLE  
Tj = 150°C  
IT = 4A  
τ = 500µs  
VD = 200V  
f = 3Hz  
MAIN CURRENT  
TIME  
3
2
MAIN  
VOLTAGE  
TIME  
VD  
IRGT I  
3
(dv/dt)c  
IRGT III  
2
101  
102  
7
5
4
7
5
I QUADRANT  
III QUADRANT  
3
2
MINIMUM  
CHARAC-  
TERISTICS  
VALUE  
3
2
100  
7
101  
100  
2
3
5 7 101  
2
3
5 7 102  
100  
2
3 4 5 7 101  
2
3 4 5 7 102  
RATE OF DECAY OF ON-STATE  
COMMUTATING CURRENT (A/ms)  
GATE CURRENT PULSE WIDTH (µs)  
Mar. 2002  
MITSUBISHI SEMICONDUCTOR TRIAC  
BCR10PM  
MEDIUM POWER USE  
The product guaranteed maximum junction  
temperature 150°C (See warning.)  
INSULATED TYPE, PLANAR PASSIVATION TYPE  
RECOMMENDED CIRCUIT VALUES  
AROUND THE TRIAC  
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS  
6Ω  
6Ω  
LOAD  
C
1
A
A
6V  
6V  
RG  
RG  
R1  
V
V
C0  
R0  
TEST PROCEDURE 1 TEST PROCEDURE 2  
6Ω  
C
R
1
1
= 0.1~0.47µF  
= 47~100Ω  
C
R
0
0
= 0.1µF  
= 100Ω  
A
6V  
RG  
V
TEST PROCEDURE 3  
Mar. 2002