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To all our customers  
Regarding the change of names mentioned in the document, such as Mitsubishi  
Electric and Mitsubishi XX, to Renesas Technology Corp.  
The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas  
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog  
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)  
Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi  
Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names  
have in fact all been changed to Renesas Technology Corp. Thank you for your understanding.  
Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been  
made to the contents of the document, and these changes do not constitute any alteration to the  
contents of the document itself.  
Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices  
and power devices.  
Renesas Technology Corp.  
Customer Support Dept.  
April 1, 2003  
MITSUBISHI SEMICONDUCTOR THYRISTOR  
CR6CM  
MEDIUM POWER USE  
NON-INSULATED TYPE, GLASS PASSIVATION TYPE  
Dimensions  
CR6CM  
OUTLINE DRAWING  
in mm  
10.5 MAX  
4.5  
1.3  
4
TYPE  
NAME  
φ3.6±0.2  
VOLTAGE  
CLASS  
1.0  
0.8  
2.5  
2.5  
0.5  
2.6  
1 2 3  
Measurement point of  
case temperature  
2 4  
1
CATHODE  
ANODE  
GATE  
1
2
3
4
3
• IT (AV) ...........................................................................6A  
• VDRM ..............................................................400V/600V  
• IGT ..........................................................................10mA  
ANODE  
TO-220  
APPLICATION  
Switching mode power supply, ECR, regulator for autocycle, motor control  
MAXIMUM RATINGS  
Voltage class  
Symbol  
Parameter  
Unit  
8
12  
VRRM  
Repetitive peak reverse voltage  
Non-repetitive peak reverse voltage  
DC reverse voltage  
400  
500  
320  
400  
320  
600  
720  
480  
600  
480  
V
V
V
V
V
VRSM  
VR (DC)  
VDRM  
Repetitive peak off-state voltage  
DC off-state voltage  
VD (DC)  
Symbol  
Parameter  
RMS on-state current  
Average on-state current  
Surge on-state current  
Conditions  
Ratings  
Unit  
A
IT (RMS)  
IT (AV)  
ITSM  
9.4  
6
Commercial frequency, sine half wave, 180° conduction, Tc=88°C  
A
60Hz sine half wave 1 full cycle, peak value, non-repetitive  
90  
A
Value corresponding to 1 cycle of half wave 60Hz, surge on-state  
current  
2
2
2
I t  
I t for fusing  
34  
A s  
PGM  
PG (AV)  
VFGM  
VRGM  
IFGM  
Tj  
Peak gate power dissipation  
Average gate power dissipation  
Peak gate forward voltage  
Peak gate reverse voltage  
Peak gate forward current  
Junction temperature  
5
0.5  
6
W
W
V
10  
2
V
A
–40 ~ +125  
–40 ~ +125  
2.0  
°C  
°C  
g
Tstg  
Storage temperature  
—
Weight  
Typical value  
Feb.1999  
MITSUBISHI SEMICONDUCTOR THYRISTOR  
CR6CM  
MEDIUM POWER USE  
NON-INSULATED TYPE, GLASS PASSIVATION TYPE  
ELECTRICAL CHARACTERISTICS  
Limits  
Symbol  
Parameter  
Test conditions  
Unit  
Min.  
—
Typ.  
—
Max.  
2.0  
2.0  
1.7  
1.0  
—
mA  
mA  
V
IRRM  
Repetitive peak reverse current  
Repetitive peak off-state current  
On-state voltage  
Tj=125°C, VRRM applied  
Tj=125°C, VDRM applied  
Tc=25°C, ITM=20A, instantaneous value  
Tj=25°C, VD=6V, IT=1A  
Tj=125°C, VD=1/2VDRM  
Tj=25°C, VD=6V, IT=1A  
Tj=25°C, VD=12V  
IDRM  
VTM  
VGT  
VGD  
IGT  
—
—
—
—
—
—
V
Gate trigger voltage  
0.2  
—
—
Gate non-trigger voltage  
Gate trigger current  
V
—
10  
mA  
mA  
°C/W  
—
15  
—
—
IH  
Holding current  
✽1  
—
3.0  
Rth (j-c)  
Thermal resistance  
Junction to case  
✽1. The contact thermal resistance Rth (c-f) is 1.0°C/W with greased.  
PERFORMANCE CURVES  
MAXIMUM ON-STATE CHARACTERISTICS  
RATED SURGE ON-STATE CURRENT  
103  
200  
180  
160  
140  
120  
100  
80  
7
5
Tc = 125°C  
3
2
102  
7
5
3
2
101  
7
5
3
2
60  
40  
20  
100  
0
0
1
2
3
4
5
100  
2
3 4 5 7 101  
2
3 4 5 7 102  
ON-STATE VOLTAGE (V)  
CONDUCTION TIME  
(CYCLES AT 60Hz)  
Feb.1999  
MITSUBISHI SEMICONDUCTOR THYRISTOR  
CR6CM  
MEDIUM POWER USE  
NON-INSULATED TYPE, GLASS PASSIVATION TYPE  
GATE TRIGGER CURRENT VS.  
JUNCTION TEMPERATURE  
103  
GATE CHARACTERISTICS  
102  
7
5
TYPICAL EXAMPLE  
7
5
3
2
3
2
V
FGM = 6V  
P
GM = 5W  
101  
7
5
3
2
102  
7
5
3
2
P
G(AV)  
= 0.5W  
V
GT = 1V  
100  
7
5
101  
7
5
I
GT = 10mA  
3
2
3
2
V
GD = 0.2V  
IFGM = 2A  
10–1  
100  
5 7 101 2 3 5 7 102 2 3 5 7 103 2 3  
5
–40–20 0 20 40 60 80 100120140160  
GATE CURRENT (mA)  
JUNCTION TEMPERATURE (°C)  
MAXIMUM TRANSIENT THERMAL  
IMPEDANCE CHARACTERISTICS  
(JUNCTION TO CASE)  
GATE TRIGGER VOLTAGE VS.  
JUNCTION TEMPERATURE  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
102  
7
5
DISTRIBUTION  
3
2
TYPICAL  
EXAMPLE  
101  
7
5
3
2
100  
7
5
3
2
10–1  
7
5
3
2
10–2  
–40 –20  
0
20 40 60 80 100 120  
10–32 3 5710–22 3 5710–12 3 571002 3 57101  
JUNCTION TEMPERATURE (°C)  
TIME (s)  
ALLOWABLE CASE TEMPERATURE VS.  
AVERAGE ON-STATE CURRENT  
(SINGLE-PHASE HALF WAVE)  
MAXIMUM AVERAGE POWER DISSIPATION  
(SINGLE-PHASE HALF WAVE)  
16  
160  
θ = 30°  
180°  
120°  
90°  
14  
12  
10  
8
140  
120  
100  
80  
θ
360°  
60°  
RESISTIVE,  
INDUCTIVE  
LOADS  
6
60  
θ
360°  
4
40  
RESISTIVE,  
INDUCTIVE  
LOADS  
θ = 30° 60° 90° 120° 180°  
2
20  
0
0
0
2
4
6
8
10 12 14 16  
0
1
2
3
4
5
6
7
8
AVERAGE ON-STATE CURRENT (A)  
AVERAGE ON-STATE CURRENT (A)  
Feb.1999  
MITSUBISHI SEMICONDUCTOR THYRISTOR  
CR6CM  
MEDIUM POWER USE  
NON-INSULATED TYPE, GLASS PASSIVATION TYPE  
ALLOWABLE CASE TEMPERATURE VS.  
AVERAGE ON-STATE CURRENT  
(SINGLE-PHASE FULL WAVE)  
160  
MAXIMUM AVERAGE POWER DISSIPATION  
(SINGLE-PHASE FULL WAVE)  
16  
θ = 30°  
14  
140  
θ
θ
180°  
120°  
360°  
12  
120  
100  
80  
60  
40  
20  
0
90°  
60°  
RESISTIVE LOADS  
10  
8
6
θ = 30°  
90° 180°  
60° 120°  
4
θ
θ
360°  
RESISTIVE LOADS  
10 12 14 16  
2
0
0
2
4
6
8
0
2
4
6
8
10 12 14 16  
AVERAGE ON-STATE CURRENT (A)  
AVERAGE ON-STATE CURRENT (A)  
ALLOWABLE AMBIENT TEMPERATURE VS.  
AVERAGE ON-STATE CURRENT  
(RECTANGULAR WAVE)  
160  
MAXIMUM AVERAGE POWER DISSIPATION  
(RECTANGULAR WAVE)  
16  
θ = 30°  
DC  
14  
12  
10  
8
140  
60°  
270°  
180°  
120°  
90°  
θ
360°  
120  
100  
80  
60  
40  
20  
0
RESISTIVE,  
INDUCTIVE  
LOADS  
6
θ
θ = 30° 90° 180°  
DC  
360°  
4
60° 120° 270°  
RESISTIVE,  
INDUCTIVE  
LOADS  
2
0
0
2
4
6
8
10 12 14 16  
0
2
4
6
8
10 12 14 16  
AVERAGE ON-STATE CURRENT (A)  
AVERAGE ON-STATE CURRENT (A)  
BREAKOVER VOLTAGE VS.  
JUNCTION TEMPERATURE  
BREAKOVER VOLTAGE VS.  
RATE OF RISE OF OFF-STATE VOLTAGE  
160  
140  
120  
100  
80  
160  
140  
120  
100  
80  
TYPICAL EXAMPLE  
Tj = 125°C  
TYPICAL  
EXAMPLE  
I
GT (25°C)  
# 1 4.7mA  
# 2 7.2mA  
# 2  
60  
60  
40  
40  
# 1  
20  
20  
0
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104  
–40–20 0 20 40 60 80 100120140160  
JUNCTION TEMPERATURE (°C)  
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)  
Feb.1999  
MITSUBISHI SEMICONDUCTOR THYRISTOR  
CR6CM  
MEDIUM POWER USE  
NON-INSULATED TYPE, GLASS PASSIVATION TYPE  
HOLDING CURRENT VS.  
JUNCTION TEMPERATURE  
HOLDING CURRENT VS.  
GATE TRIGGER CURRENT  
50  
103  
7
45  
40  
35  
30  
25  
20  
15  
10  
5
5
3
2
102  
7
5
3
2
DISTRIBUTION  
TYPICAL EXAMPLE  
101  
7
5
3
2
100  
0
–40–20 0 20 40 60 80 100120140160  
0
2
4
6
8 10 12 14 16 18 20  
JUNCTION TEMPERATURE (°C)  
GATE TRIGGER CURRENT (mA)  
TURN-OFF TIME VS.  
TURN-ON TIME VS. GATE CURRENT  
JUNCTION TEMPERATURE  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0
80  
70  
60  
50  
40  
30  
20  
10  
0
V
R
D
= 100V  
TYPICAL  
EXAMPLE  
L = 16Ω  
T
a
= 25°C  
TYPICAL  
EXAMPLE  
I
GT (25°C)  
# 5.2mA  
#
DISTRIBUTION  
IT = 6A, –di/dt = 5A/µs,  
VD  
= 300V, dv/dt = 20V/µs  
= 50V  
VR  
0
10 20 30 40 50 60 70 80 90 100  
GATE CURRENT (mA)  
0
20 40 60 80 100 120 140 160  
JUNCTION TEMPERATURE (°C)  
REPETITIVE PEAK REVERSE VOLTAGE VS.  
JUNCTION TEMPERATURE  
GATE TRIGGER CURRENT VS.  
GATE CURRENT PULSE WIDTH  
160  
104  
7
tw  
TYPICAL EXAMPLE  
TYPICAL EXAMPLE  
5
140  
120  
100  
80  
3
2
0.1s  
103  
7
5
3
2
60  
102  
7
5
40  
3
2
20  
0
101  
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102  
GATE CURRENT PULSE WIDTH (µs)  
–40–20 0 20 40 60 80 100120140160  
JUNCTION TEMPERATURE (°C)  
Feb.1999