1N5267B
1N5221B THRU
Silicon Z–Diodes
Unit: inch (mm)
.022(0.55)
.018(0.45)
DO-35
Features
1.02(26.0)
MIN.
Plannar Die constuction
500mW Power Dissipation
Ideally Suited for Automated Assembly Processes
.153(3.6)
.132(3.0)
V –tolerance ± 5%
Z
Applications
.087(2.2)
.067(1.7)
Voltage stabilization
1.02(26.0)
MIN.
MECHANICAL DATA
Approx. Weight:
0.136 grams
Absolute Maximum Ratings
T = 25 C
j
Parameter
Power dissipation
Z–current
Junction temperature
Storage temperature range
est Conditions
=25 C
amb
Type
Symbol
Value
500
Unit
mW
mA
C
T
P
TOT
T
I
Z
P /V
V
Z
T
175
–65...+175
j
T
stg
C
Maximum Thermal Resistance
T = 25 C
j
Parameter
Junction ambient
Test Conditions
l=9.5mm (3/8”), T =constant
Symbol
R
thJA
Value
300
Unit
K/W
L
Electrical Characteristics
T = 25 C
j
Parameter
Forward voltage
Test Conditions
I =200mA
Type
Symbol Min
Typ Max Unit
1.1
V
F
V
F
2010.06
WILLS ELECTRONIC CORP.