1N5267B  
					1N5221B THRU  
					
					Silicon Z–Diodes  
					Unit: inch (mm)  
					.022(0.55)  
					.018(0.45)  
					DO-35  
					Features  
					1.02(26.0)  
					MIN.  
					Plannar Die constuction  
					500mW Power Dissipation  
					Ideally Suited for Automated Assembly Processes  
					.153(3.6)  
					.132(3.0)  
					V –tolerance ± 5%  
					Z
					Applications  
					.087(2.2)  
					.067(1.7)  
					Voltage stabilization  
					1.02(26.0)  
					MIN.  
					MECHANICAL DATA  
					Approx. Weight:  
					0.136 grams  
					Absolute Maximum Ratings  
					T = 25 C  
					j
					Parameter  
					Power dissipation  
					Z–current  
					Junction temperature  
					Storage temperature range  
					est Conditions  
					=25 C  
					amb  
					Type  
					Symbol  
					Value  
					500  
					Unit  
					mW  
					mA  
					C
					T
					P
					TOT  
					T
					I
					Z
					P /V  
					V
					Z
					T
					175  
					–65...+175  
					j
					T
					stg  
					C
					Maximum Thermal Resistance  
					T = 25 C  
					j
					Parameter  
					Junction ambient  
					Test Conditions  
					l=9.5mm (3/8”), T =constant  
					Symbol  
					R
					thJA  
					Value  
					300  
					Unit  
					K/W  
					L
					Electrical Characteristics  
					T = 25 C  
					j
					Parameter  
					Forward voltage  
					Test Conditions  
					I =200mA  
					Type  
					Symbol Min  
					Typ Max Unit  
					1.1  
					V
					F
					V
					F
					2010.06  
					WILLS ELECTRONIC CORP.