1N4001G ~ 1N4007G  
					VOLTAGE 50 ~ 1000 V  
					1.0 A, General Purpose Plastic Rectifiers  
					Elektronische Bauelemente  
					RoHS Compliant Product  
					A suffix of “-C” specifies halogen & lead-free  
					FEATURES  
					DO-41  
					ꢀ
					ꢀ
					ꢀ
					ꢀ
					Low reverse current  
					High surge current capability  
					High current capability  
					C
					A
					B
					A
					Component in accordance to RoHS 2002/95/EC  
					MECHANICAL DATA  
					D
					ꢀ
					Case: DO-41  
					ꢀ
					Case Material: Molded plastic,  
					UL Flammability classification rating 94V-0  
					Terminals: Lead free plating (Tin Finish)  
					Soderable per MIL-STD-202, Method 208  
					Polarity: Cathode band  
					ꢀ
					ꢀ
					ꢀ
					Millimeter  
					Min. Max.  
					25.4 (TYP)  
					REF.  
					Weight: 0.318 grams(approximate)  
					A
					B
					C
					D
					4.10  
					5.21  
					2.72  
					0.90  
					2.00  
					0.70  
					MAXIMUM RATINS (TA=25°C unless otherwise specified)  
					TYPE NUMBER  
					PARAMETER  
					SYMBOL  
					UNIT  
					1N  
					4001G  
					50  
					1N  
					1N  
					1N  
					1N  
					1N  
					1N  
					4002G 4003G 4004G 4005G 4006G 4007G  
					Repetitive Peak Reverse Voltage (Max.)  
					RMS Voltage (Max.)  
					VRRM  
					VRMS  
					VDC  
					IF  
					100  
					70  
					200  
					140  
					200  
					400  
					280  
					400  
					600  
					420  
					600  
					800  
					560  
					800  
					1000  
					700  
					V
					V
					V
					A
					35  
					DC Blocking Voltage (Max.)  
					50  
					100  
					1000  
					Average Forward Rectified Current (Max.)  
					Peak Forward Surge Current, 8.3 ms single half  
					sine-wave superimposed on rated load  
					Instantaneous Forward Voltage at 1.0A (Max.)  
					1.0  
					IFSM  
					VF  
					IR  
					30  
					A
					V
					1.10  
					5.0  
					50  
					DC Reverse Current at Rated  
					DC Blocking Voltage (Max.)  
					Typical Junction Capacitance1  
					Typical Thermal Resistance  
					Operating, Storage temperature  
					TA = 25°C  
					µA  
					TA = 100°C  
					CJ  
					15  
					10  
					pF  
					°C /W  
					°C  
					RθJA  
					100  
					TJ, TSTG  
					-55 ~ +125, -55~150  
					Notes: 1. Measured at 1MHz and Applied Reverse Voltage of 4.0V D.C.  
					http://www.SeCoSGmbH.com/  
					Any changes of specification will not be informed individually.  
					17-Dec-2009 Rev. B  
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