100BGQ045--Datasheet/数据表在线中文翻译

PD-20709 rev. C 11/99

100BGQ045

100BGQ045J

100 Amp

SCHOTTKY RECTIFIER

Major Ratings and Characteristics

Description/Features

The NEW 100BGQ045 Schottky rectifier has been optimized for

ultralowforwardvoltagedropspecificallyforlowvoltageoutputin

high current AC/DC power supplies.

Characteristics

100BGQ045 Units

Theproprietarybarrier technologyallowsforreliableoperationup

to 150°C junction temperature. Typical applications are in

switchingpowersupplies,converters,reversebatteryprotection,

andredundantpowersubsystems.

I

Rectangular waveform

100

A

°C

A

F(AV)

@T

C

I

Maximum

141

DC

150°CT operation

J

HighFrequencyOperation

V

I

45

V

RRM

Ultralowforwardvoltagedrop

ContinuousHighCurrentoperation

@tp=5µssine

4400

0.63

A

FSM

V

@100Apk typical

V

F

Guard ring for enhanced ruggedness and long term

reliability

PowIRtab^TMpackage

@T

J

150

°C

T

range

-55 to150

J

Case Styles

100BGQ045

100BGQ045J

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1

100BGQ045, 100BGQ045J

PD-20709 rev. C 11/99

Voltage Ratings

Part number

100BGQ045

V_R

Max. DC Reverse Voltage (V)

45

V_RWMMax. Working Peak Reverse Voltage (V)

Absolute Maximum Ratings

Parameters

100BGQ Units

Conditions

I_F(AV)Max.AverageForwardCurrent

100

A

50%dutycycle@T_C=100°C,rectangular waveform

I

_F(RMS)RMS ForwardCurrent

141

4400

830

A

T_C=95°C

Followinganyrated

loadconditionand

withratedV_RRMapplied

I_FSMMax.PeakOneCycleNon-Repetitive

SurgeCurrent

5µs Sineor3µsRect.pulse

10msSineor6msRect. pulse

A

E_ASNon-RepetitiveAvalancheEnergy

40

6

mJ

A

T_J=25°C, I_AS=6Amps,L=2.0mH

I_AR

RepetitiveAvalancheCurrent

Currentdecayinglinearlytozeroin1µsec

FrequencylimitedbyT_Jmax.V_A=1.5xV_Rtypical

Electrical Specifications

Parameters

100BGQ Units

Conditions

Typ. Max.

V_FMForward Voltage Drop

(1) (2) 0.52 0.56

V

@

50A

T_J= 25 °C

0.67 0.73

0.47 0.52

0.63 0.68

100A

50A

V

T_J= 150 °C

V

100A

I_RMReverseLeakageCurrent(1)

V_F(TO)ThresholdVoltage

0.3

1

mA

T_J= 25 °C

T_J= 125°C

T_J= 150 °C

V_R= rated V_R

V_R= 45 V

180 320 mA

600 1000 mA

0.379 VT_J= T_Jmax.

r_t

ForwardSlopeResistance

Max. Junction Capacitance

Typical Series Inductance

2.7 mΩ

C_T

L_S

2700 pF

3.5 nH

V_R= 5V_DC, (test signal range 100Khz to 1Mhz) 25 °C

Measured from tab to mounting plane

dv/dt Max. Voltage Rate of Change

(RatedV_R)

10,000V/ µs

(1) Pulse Width < 300µs, Duty Cycle < 2%

(2) V_FM= V_F(TO)+ r x I_F

t

Thermal-Mechanical Specifications

Parameters

100BGQ Units

Conditions

T_J

Max.JunctionTemperatureRange

-55to150

0.50

°C

T_stgMax.StorageTemperatureRange

°C

R_thJCMax.ThermalResistanceJunction

toCase

°C/W DCoperation

R_thCSTypicalThermalResistance,Caseto

Heatsink

0.20

°C/W Mountingsurface,smoothandgreased

wt

T

ApproximateWeight

MountingTorque

5(0.18) g(oz.)

Min.

1.2(10)

N*m

(Ibf-in)

Max.

2.4(20)

CaseStyle

PowIRtab^TM

2

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100BGQ045, 100BGQ045J

PD-20709 rev. C 11/99

1 0 0 0

1 0 0

1 0

1 0 0 0

1 0 0

1 0

T

=

1 5 0 °C

1 2 5 °C

1 0 0 °C

J

T

=

1 5 0 ° C

1 2 5 ° C

2 5 ° C

J

7 5 °C

5 0 °C

1

0 . 1

2 5 °C

0 . 0 1

0

5

1 0

1 5

2 0

2 5

3 0

V

3 5

4 0

4 5

Re v e rse V o lt a g e

-

( V )

R

Fig.2-Typical Values of Reverse Current

Vs. Reverse Voltage

1 0 0 0 0

1 0 0 0

1 0 0

T

= 2 5 ° C

J

1

0

0 . 2

0 . 4

0 . 6

0 . 8

1

1 . 2

( V )

1 . 4

1 . 6

0

1 0

2 0

3 0

4 0

(V )

5 0

Fo rw a rd V o lt a g e D ro p

-

V

Re v e rse V o lta g e

- V

R

FM

Fig.1-Maximum Forward Voltage Drop Characteristics

Fig.3-Typical Junction Capacitance

Vs. Reverse Voltage

1

D

= 0 .7 5

= 0 .5 0

= 0 .3 3

= 0 .2 5

= 0 .2 0

P

D M

0 . 1

t

1

t

Sin g le Pu lse

(Th e rm a l Re sista n c e )

2

N o t e s:

1 . D u t y f a c t o r

D

=

t

/ t

2

1

2 . P e a k

1

T

=

P

x

Z

+ T

C

th J C

J

D M

0 . 0 1

0 . 0 0 0 0 1

0 . 0 0 0 1

0 . 0 0 1

0 . 0 1

0 . 1

1 0

1 0 0

t

, Re c ta n g u la r Pu lse D u ra tio n (Se c o n d s)

1

Fig.4-Maximum Thermal Impedance Z_thJCCharacteristics

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3

100BGQ045, 100BGQ045J

PD-20709 rev. C 11/99

1 2 0

1 0 0

8 0

1 5 0

1 4 0

1 3 0

D

=

0 .2 0

0 .2 5

0 .3 3

0 .5 0

0 .7 5

D C

1 2 0

1 1 0

1 0 0

RM S Lim it

D C

6 0

Sq u a re w a v e ( D

=

0 .5 0 )

9 0

8 0

7 0

6 0

5 0

8 0 % Ra t e d

V

a p p lie d

4 0

R

2 0

s e e n o te (3 )

0

2 0

4 0

6 0

8 0

1 0 0 1 2 0 1 4 0 1 6 0

0

2 0

4 0

6 0

8 0

1 0 0 1 2 0 1 4 0 1 6 0

( A )

A v e ra g e Fo rw a rd C u rre n t

-

I

( A )

F(A V)

A v e ra g e Fo rw a rd C u rre n t

-

I

F(AV )

Fig.5-MaximumAllowableCaseTemperature

Vs.AverageForwardCurrent

Fig.6-Forward Power Loss Characteristics

10 0 0 0

1 0 0 0

A t A n y Ra t e d Lo a d C o n d itio n

A n d W it h Ra t e d

Fo llo w in g Su rg e

V

A p p lie d

RRM

1 00

1 0

1 00

1 00 0

1 00 00

Sq u a re W a v e P u lse D u ra t io n

-

t

(m ic ro se c )

Fig.7-MaximumNon-Repetitive^pSurgeCurrent

L

H IG H - SP E ED

SW ITC H

IRFP4 60

D UT

FR EE- W H EEL

D IO D E

Rg = 25 o h m

V d

= 2 5 V o lt

+

C

URRE N T

40 HFL4 0 S02

M O N ITO R

Fig.8-Unclamped Inductive Test Circuit

(3) Formula used: T_C= T_J- (Pd + Pd_REV) x R_thJC

;

Pd = Forward Power Loss = I_F(AV)x V_FM@ (I_F(AV)/ D) (see Fig. 6);

Pd_REV= Inverse Power Loss = V_R1x I_R(1 - D); I_R@ V_R1= 80% rated V_R

4

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100BGQ045, 100BGQ045J

PD-20709 rev. C 11/99

Ordering Information Table

DeviceCode

100 BGQ 045

J

2

4

1

3

1

2

3

4

6

-

Current Rating

Essential Part Number

Voltage code: Code = V

RRM

none = PowIRtab^TMstandard

J

= ShortLeadVersion

Outline Table

CaseStyle PowIRtab^TM

Dimensions in millimeters and (inches)

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5

100BGQ045, 100BGQ045J

PD-20709 rev. C 11/99

Outline Table

CaseStyle PowIRtab^TM"J"version

Dimensions in millimeters and (inches)

6

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100BGQ045, 100BGQ045J

PD-20709 rev. C 11/99

***************************************************

Thismodelhasbeendevelopedby

Wizard SPICE MODEL GENERATOR(1999)

(InternationalRectifier Corporation)

containsProprietaryInformation

This model

***************************************************

SPICE Model Diode is composed by a

simple diode plus paralled VCG2T

***************************************************

.SUBCKT100bgq45 ANOCAT

D1 ANO 1 DMOD (0.24359)

*Define diode model

.MODEL DMOD D(IS=6.61799286342482E-05A,N=1.0212796726385,BV=45V,

+IBV=0.115140026620575A,RS=0.0005748724,CJO=3.31930927290723E-08,

+VJ=0.456112448442971,XTI=2,EG=0.721992455742664)

*****************************************************

*ImplementationofVCG2T

VX 1 2 DC 0V

R1 2 CAT TRES 1E-6

.MODEL TRES RES(R=1,TC1=9.83346387011944)

GP1 ANO CAT VALUE={-ABS(I(VX))*(EXP((((-2.949174E-03/

9.833464)*((V(2,CAT)*1E6)/(I(VX)+1E-6)-1))+1)*6.600191E-2*ABS(V(ANO,CAT)))-1)}

*****************************************************

.ENDS100bgq45

ThermalModelSubcircuit

.SUBCKT 100bgq45T 5 1

CTHERM1

CTHERM2

CTHERM3

CTHERM4

5

4

3

2

4

3

2

1

1.66E+3

2.22E+2

1.48E+5

3.12E+5

RTHERM1

RTHERM2

RTHERM3

RTHERM4

5

4

3

2

4

3

2

1

3.42E-2

2.55E-1

8.41E-2

1.81E-4

.ENDS 100bgq45T

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 U.S.A. Tel: (310) 322 3331. Fax: (310) 322 3332.

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http://www.irf.com

Fax-On-Demand: +44 1883 733420

Data and specifications subject to change without notice.

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