2SA673, 2SA673A
PNP
General Purpose Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead free
FEATURES
TO-92
ꢀ
Low frequency amplifier
Complementary pair with 2SC1213 and 2SC1213A
G
H
ꢀ
1Emitter
2Collector
3Base
J
B
CLASSIFICATION OF hFE(1)
A
D
2SA673-B
2SA673A-B
60~120
2SA673-C
2SA673A-C
100~200
2SA673-D
2SA673A-D
160~320
Product-Rank
Product-Rank
Range
Millimeter
REF.
Min.
4.40
4.30
12.70
3.30
0.36
0.36
Max.
4.70
4.70
-
3.81
0.56
0.51
A
B
C
D
E
F
K
E
C
F
G
H
J
1.27 TYP.
1.10
2.42
0.36
-
2.66
0.76
K
Collector
2
3
Base
1
Emitter
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Unit
2SA673
2SA673A
2SA673
2SA673A
-35
Collector to Base Voltage
VCBO
V
-50
-35
Collector to Emitter Voltage
VCEO
V
-50
-4
Emitter to Base Voltage
VEBO
IC
V
mA
mW
°C
Continuous Collector Current
Collector Power Dissipation
Junction, Storage Temperature
-500
PC
400
TJ, TSTG
150, -55~150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Collector to Base Breakdown 2SA673
-35
-50
-35
-50
-4
-
-
V(BR)CBO
V
IC= -10µA, IE=0
Voltage
2SA673A
2SA673
-
-
Collector to Emitter
Breakdown Voltage
-
-
V(BR)CEO
V
IC= -1mA, IB=0
2SA673A
-
-
-
Emitter to Base Breakdown Voltage
Collector Cut - Off Current
V(BR)EBO
ICBO
-
V
IE= -10µA, IC=0
-
-
-0.5
320
-
µA
VCB= -20V, IE=0
hFE (1)
60
10
-
-
VCE= -3V, IC=- 10mA
VCE= -3V, IC= -500mA
IC = -150mA, IB= -15mA
VCE= -3V, IC= -10mA
DC Current Gain
hFE (2)
VCE(sat)
VBE
*
-
-
Collector to Emitter Saturation Voltage
Collector to Emitter Voltage
*
-0.6
-
V
V
-
-0.64
* Pulse test: pulse width ≤300µs, duty cycle≤ 2.0%.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
21-Jan-2011 Rev. C
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